fujitsu power amplifier GHz
Abstract: FMM5805
Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC
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FMM5805X
5-20GHz
FMM5805X
the17
FCSI0699M200
fujitsu power amplifier GHz
FMM5805
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0 281 002 924
Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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Original
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PDF
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FMM5806X
26dBm
FMM5806X
FCSI0699M200
0 281 002 924
8 F 804
FUJITSU SEMICONDUCTOR phemt
power amplifier mmic
|
fujitsu power amplifier GHz
Abstract: No abstract text available
Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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Original
|
PDF
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FMM5806X
26dBm
FMM5806X
FCSI0699M200
fujitsu power amplifier GHz
|
FMM5805X
Abstract: No abstract text available
Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC
|
Original
|
PDF
|
FMM5805X
5-20GHz
FMM5805X
the17
FCSI0699M200
|
FUJITSU SEMICONDUCTOR phemt
Abstract: FMM5806X fujitsu power amplifier GHz power amplifier mmic
Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
|
Original
|
PDF
|
FMM5806X
26dBm
FMM5806X
FCSI0699M200
FUJITSU SEMICONDUCTOR phemt
fujitsu power amplifier GHz
power amplifier mmic
|
Untitled
Abstract: No abstract text available
Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC
|
Original
|
PDF
|
FMM5805X
5-20GHz
FMM5805X
the17
FCSI0699M200
|