FMM5805 Search Results

FMM5805 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
FMM5805GJ-1		Fujitsu	17.7-19.7 GHz Power Amplifier MMIC		Original	PDF
FMM5805GJ-1		Unknown	17.7-19.7GHz Power Amplifier MMIC		Original	PDF
FMM5805X		Fujitsu	17.5-20 GHz Power Amplifier MMIC		Original	PDF

FMM5805 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
17800 Abstract: No abstract text available Text: FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 31.0dBm Typ. • High Gain: G1dB = 20.0dB(Typ.) • High PAE: ηadd = 27% (Typ.) • Low In/Out VSWR • Broad Band: 17.7 ~ 19.7GHz • Impedance Matched Zin/Zout = 50Ω	Original	PDF	FMM5805GJ-1 FMM5805GJ-1 FCSI0301M200 17800
FMM5805 Abstract: No abstract text available Text: FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 31.0dBm Typ. • High Gain: G1dB = 20.0dB(Typ.) • High PAE: ηadd = 27% (Typ.) • Low In/Out VSWR • Broad Band: 17.7 ~ 19.7GHz • Impedance Matched Zin/Zout = 50Ω	Original	PDF	FMM5805GJ-1 FMM5805GJ-1 FCSI0500M200 FMM5805
Untitled Abstract: No abstract text available Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC	Original	PDF	FMM5805X 5-20GHz FMM5805X the17
fujitsu power amplifier GHz Abstract: FMM5805 Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC	Original	PDF	FMM5805X 5-20GHz FMM5805X the17 FCSI0699M200 fujitsu power amplifier GHz FMM5805
FMM5805X Abstract: No abstract text available Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC	Original	PDF	FMM5805X 5-20GHz FMM5805X the17 FCSI0699M200
17800 Abstract: FMM5805GJ-1 Text: FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 31.0dBm Typ. • High Gain: G1dB = 20.0dB(Typ.) • High PAE: ηadd = 27% (Typ.) • Low In/Out VSWR • Broad Band: 17.7 ~ 19.7GHz • Impedance Matched Zin/Zout = 50Ω	Original	PDF	FMM5805GJ-1 FMM5805GJ-1 17800
Untitled Abstract: No abstract text available Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC	Original	PDF	FMM5805X 5-20GHz FMM5805X the17 FCSI0699M200