FMM3175VI
Abstract: VIB52
Text: 2.5Gb/s GaAs Laser Driver with Re-Timing Function FMM3175VI FEATURES • • • • • • • • • Operation Speed Up to 2.5Gb/s, NRZ Built in D-FF Re-timing and Bypass mode: Selectable Peak Modulation Current with 25Ω load: 70mA (Min.) Bias Current: 70mA (Min.)
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FMM3175VI
FMM3175VI
OC-48)
FCSI0101M200
VIB52
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FLM8596-4F
Abstract: No abstract text available
Text: FLM8596-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω
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FLM8596-4F
-45dBc
FLM8596-4F
FCSI0101M200
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FMM3175VI
Abstract: No abstract text available
Text: 2.5Gb/s GaAs Laser Driver with Re-Timing Function FMM3175VI FEATURES • • • • • • • • • Operation Speed Up to 2.5Gb/s, NRZ Built in D-FF Re-timing and Bypass mode: Selectable Peak Modulation Current with 25Ω load: 70mA (Min.) Bias Current: 70mA (Min.)
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FMM3175VI
FMM3175VI
OC-48)
FCSI0101M200
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FMM3174VI
Abstract: No abstract text available
Text: 2.5Gb/s MI Laser Driver with Re-Timing Function FMM3174VI FEATURES • • • • • • • • Operation speed up to 2.5Gb/s, NRZ Built in D-FF Re-timing and Bypass mode: Selectable ECL Compatible Input Output Voltage: 3.0Vpp (RL=50Ω) Single -5.2V Power Supply
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FMM3174VI
16-Pin
FMM3174VI
OC-48)
FCSI0101M200
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FMM3174VI
Abstract: capacitor 0.068uf
Text: 2.5Gb/s MI Laser Driver with Re-Timing Function FMM3174VI FEATURES • • • • • • • • Operation speed up to 2.5Gb/s, NRZ Built in D-FF Re-timing and Bypass mode: Selectable ECL Compatible Input Output Voltage: 3.0Vpp (RL=50Ω) Single -5.2V Power Supply
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FMM3174VI
16-Pin
FMM3174VI
OC-48)
FCSI0101M200
capacitor 0.068uf
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FLM8596-12F
Abstract: No abstract text available
Text: FLM8596-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω
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FLM8596-12F
-45dBc
FLM8596-12F
FCSI0101M200
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transistor IC 1557 b
Abstract: FLD5F15CA-R9530 T-1298 r929 TM 1628 IC FLD5F15CA-R9610 IC TM 1628
Text: Tunable LD Module with Wavelength Locker FLD5F15CA-R FEATURES: • CW light source with integrated wavelength locker • Output Power: 13dBm min. • Tunable over 8 ITU-T grid channels (2.8nm) • Available at C Band ITU-T grid wavelengths between 1528.773-1570.005nm
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FLD5F15CA-R
13dBm
005nm
FLD5F15CA-R)
13dBm)
FCSI0101M200
transistor IC 1557 b
FLD5F15CA-R9530
T-1298
r929
TM 1628 IC
FLD5F15CA-R9610
IC TM 1628
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c9450
Abstract: FLD5F6CA-C9110 fujitsu optical module c927 C9270 IC TM 1628 FLD5F6CA-C9610 TM 1628 Datasheet FLD5F6CA-C9450 FLD5F6CA
Text: Tunable LD Module with Wavelength Locker FLD5F6CA-C FEATURES: • Wavelength Locker, Integrated CW light source • Tunable Range : 2.4nm or more with 2 channel ITU-T grid selectable with 100GHz spacing • Wavelengths available to ITU-T standard 100GHz spacing
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100GHz
13dBm
200mA
/-40pm
20years
FCSI0101M200
c9450
FLD5F6CA-C9110
fujitsu optical module
c927
C9270
IC TM 1628
FLD5F6CA-C9610
TM 1628 Datasheet
FLD5F6CA-C9450
FLD5F6CA
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FLM8596-8F
Abstract: No abstract text available
Text: FLM8596-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω
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FLM8596-8F
-45dBc
FLM8596-8F
FCSI0101M200
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TM 1628 IC
Abstract: ic TM 1628 Fujitsu tunable laser FLD5F15CA-K locker etalon locker 81702 etalon wavelength locker Fabry-Perot 1550 nm butterfly laser wavelength locker
Text: Tunable LD Module with Wavelength Locker FLD5F15CA-K FEATURES: • CW light source with integrated wavelength locker • 13dBm min. output power • Tunable over 4 ITU-T grid channels (2.4nm) • Available at C Band ITU-T grid wavelengths between 1528.77-1569.99nm
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FLD5F15CA-K
13dBm
/-25pm
FLD5F15CA-K)
13dBm)
FCSI0101M200
TM 1628 IC
ic TM 1628
Fujitsu tunable laser
FLD5F15CA-K
locker
etalon locker
81702
etalon wavelength locker
Fabry-Perot 1550 nm butterfly
laser wavelength locker
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FMM5811GJ-1
Abstract: 17800 power amplifier mmic FMM5811
Text: FMM5811GJ-1 17.7-23.6GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 24.5dBm Typ. High Gain: G1dB = 15dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 17.7-23.6GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5811GJ-1
FMM5811GJ-1
FCSI0101M200
17800
power amplifier mmic
FMM5811
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10Gb/s laser driver
Abstract: FMM3109ZH FCSI0101M200
Text: 10Gb/s MI-LD/Modulator Driver FMM3109ZH FEATURES • • • • • • • • • • Operation DC to 10Gb/s, NRZ Internal Input/Output 50Ω Termination Output Voltage Swing: 3.0Vpp Typ. 2.85V Min. Peak Current Adjustment SCFL Compatible Differential Input
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10Gb/s
FMM3109ZH
10Gb/s,
FMM3109ZH
OC-192)
FCSI0101M200
10Gb/s laser driver
FCSI0101M200
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FMM5811GJ-1
Abstract: FMM5811 power amplifier mmic
Text: FMM5811GJ-1 17.7-23.6GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 24.5dBm Typ. High Gain: G1dB = 15dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 17.7-23.6GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5811GJ-1
FMM5811GJ-1
FCSI0101M200
FMM5811
power amplifier mmic
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FLM8596-4F
Abstract: No abstract text available
Text: FLM8596-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω
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FLM8596-4F
-45dBc
FLM8596-4F
FCSI0101M200
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