tcxo 108
Abstract: TCXO L TCXO 68 MHZ
Text: TC Type Stratum III Voltage Controlled Temperature Compensated Crystal Oscillator RoHS Compliant Standard FEATURE 1.Typical 7.0 x 5.0 x 1.85mm ceramic SMD package. 2.Stratum 3 Overall ±4.6PPM including 20years aging 3.CMOS and Clipped Sine wave Output Optional.
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20years
000MHzFo18
000MHz
000MHzFo30
000MHzFo52
00MHz
88MHz
100Hz
tcxo 108
TCXO L
TCXO 68 MHZ
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Untitled
Abstract: No abstract text available
Text: 5V CMOS TCXO Stratum 3 HTFH & HTVH Specifications Product Parameters HTFH HTVH Frequency range: 6.40 ~ 56.0MHz Calibration tolerance: ±1.0ppm Frequency stability: ±4.6ppm inclusive of calibration tolerance temperature, voltage, load, 20years
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20years
100Hz
-135dBc/Hz
-150dBc/Hz
10kHz
100kHz
12kHz
440MHz
7360MHz
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS TCXO Stratum 3 HTFL & HTVL Specifications Product Parameters HTFL HTVL Frequency range: 6.40 ~ 56.0MHz Calibration tolerance: ±1.0ppm Frequency stability: ±4.6ppm inclusive of calibration tolerance temperature, voltage, load, 20years
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20years
100Hz
-135dBc/Hz
-150dBc/Hz
10kHz
100kHz
12kHz
440MHz
7360MHz
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Untitled
Abstract: No abstract text available
Text: 5V CMOS TCXO Stratum 3 HTFH & HTVH Specifications Product Parameters HTFH ±1.0ppm Frequency stability: ±4.6ppm inclusive of calibration tolerance temperature, voltage, load, 20years ageing, shock & vibration
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20years
-150dBc/Hz
10kHz
100kHz
440MHz
7360MHz
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Untitled
Abstract: No abstract text available
Text: 3.3V CMOS TCXO Stratum 3 HTFL & HTVL Specifications Product Parameters HTFL ±1.0ppm Frequency stability: ±4.6ppm inclusive of calibration tolerance temperature, voltage, load, 20years ageing, shock & vibration
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20years
-150dBc/Hz
10kHz
100kHz
440MHz
7360MHz
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MR0A16A
Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
Text: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System
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MR0A16A
64Kx16
20-years
44-TSOP
48-BGA
MR0A16A
SRAM 64Kx16
MR0A16ACYS35
MR0A16AVYS35
MR0A16AYS35
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tsop 48 PIN type2
Abstract: 48BGA MR0A16AMA35
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature
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MR0A16A
20-years
MR0A16A
576-bit
EST354
tsop 48 PIN type2
48BGA
MR0A16AMA35
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0.35mm pitch BGA
Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
Text: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages
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MR4A08B
20-years
AEC-Q100
MR4A08B
216-bit
MR4A08B,
EST356
0.35mm pitch BGA
MR4A08BCYS35R
MR4A08BC
mr4a08bcys
MR4A08BCYS35
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Untitled
Abstract: No abstract text available
Text: TX-500 Temperature Compensated Crystal Oscillator TX-500 Features Applications • Low Phase Noise • Low power consumption • Output: HCMOS, Clipped Sinewave, PECL, True Sinewave • Tight Tolerances • Frequency range 1 of 6.4 - 160 MHz • Standard Frequencies : 10, 12.8, 16.384, 19.44, 19.2, 20, 26
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TX-500
D-74924
1-88-VECTRON-1
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JESD22-A101
Abstract: IEC68-2-27 VCXO-7050 VCXO-7050L IEC-68-2-27 IEC-682-6
Text: VCXO-7050/7050L Miniature VCXO Geared to Broadband •Features ¡“Small Size” as small as 0.063cc. 5x7×1.8mm ¡Using 1 chip HCMOS IC. ¡3-state devices are available. ¡APR (Absolute Pull Range) of up to ±50ppm or ±100ppm*2. ■Typical Applications
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VCXO-7050/7050L
063cc.
50ppm
100ppm
VCXO-7050
VCXO-7050L
2880MHz
0000MHz
20years
MIL-STD-202-Method
JESD22-A101
IEC68-2-27
VCXO-7050
VCXO-7050L
IEC-68-2-27
IEC-682-6
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Untitled
Abstract: No abstract text available
Text: Temperature Compensated Crystal Oscillators TCXO Surface Mount Type TCXO (LSI Type) KT5032 Series for Femtocell/ Stratum3 Features How to Order For Femtocell (Standard Spec.) • High stability and high reliability • 2.7 to 5.5V drive available • Clipped sine wave or CMOS level
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KT5032
KT5032F
10pin
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Untitled
Abstract: No abstract text available
Text: FM25Q08 FM25Q08 8M-BIT Serial Flash Memory with 4KB Sectors, Dual and Quad I/O SPI preliminary Aug.18.2010 1 FM25Q08 Documents title 8M bit Serial Flash Memory with 4KB Sectors, Dual and Quad I/O SPI Revision History Revision No. 0.0 0.1 History Initial Draft
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FM25Q08
tSHSL20ns
27BSC
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FM25Q16
Abstract: No abstract text available
Text: FM25Q16 FM25Q16 16M-BIT Serial Flash Memory with 4KB Sectors, Dual and Quad I/O SPI Rev.06 Aug.18. 2010 1 FM25Q16 Documents title 16M bit Serial Flash Memory with 4KB Sectors, Dual and Quad I/O SPI Revision History Revision No. 0.0 0.1 0.2 0.3 0.4 0.5 0.6
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FM25Q16
16M-BIT
tSHSL20ns
27BSC
FM25Q16
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Untitled
Abstract: No abstract text available
Text: FREQUENCY Oven Controlled Crystal Oscillator for Switching applications rev-W3 Specifications Parameters F r eq u en c y Oven Controlled Crystal Oscillator for Switching applications (rev-W3) July 27, 2006 Specifications Ref Parameters 1 2 2.1 2.2 3 4 4.1
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30min
20years
10-150Hz
BO3-34
DOC4830
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temex ocxo
Abstract: ocxo temex
Text: FREQUENCY Oven Controlled Crystal Oscillator for Switching Stratum 3 and DSL applications rev-W3 Specifications Parameters F r eq u en c y Oven Controlled Crystal Oscillator for Switching Stratum 3 and DSL applications (rev-W3) July 27, 2006 Specifications
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5g/10
DOC5205
temex ocxo
ocxo temex
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Untitled
Abstract: No abstract text available
Text: ACE25C100 1M-BIT Serial Flash Memory Description The ACE25C100 is a 1M-BIT 128K-byte Serial Flash memory, with advanced write protection mechanisms. The ACE25C100 supports the standard Serial Peripheral Interface (SPI), and a high performance Dual output as well as
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ACE25C100
ACE25C100
128K-byte)
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1678B LE25CA322 Serial SPI EEPROM SPI Bus (32Kbit) Overview The LE25CA322 is a 32Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is
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ENA1678B
LE25CA322
32Kbit)
LE25CA322
32Kbit
NA1678-14/14
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LE25LB2562
Abstract: No abstract text available
Text: Ordering number : ENA1435A LE25LB2562M 256Kbit Serial SPI EEPROM SPI Bus Overview The LE25LB2562M is a 256Kbit EEPROM that supports serial peripheral interface (SPI). It realizes high speed operation and high level reliability by incorporating SANYO’s high performance CMOS EEPROM technology. The interface is
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ENA1435A
LE25LB2562M
256Kbit
LE25LB2562M
A1435-14/14
LE25LB2562
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Untitled
Abstract: No abstract text available
Text: MR256D08B Dual Supply 32K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature
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MR256D08B
20-years
MR256D08B
144-bit
EST411
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VC-FXO-35F
Abstract: VC-FXO-35FL VC-FXO-65F VCXO-7050 kss 20MHZ KSS 14318
Text: Voltage Controlled Crystal Oscillators VCXO Surface Mount Type KV5032A Series (VC-FXO-65F Series) CMOS / 3.3V / 5.0V / 5.0x3.2mm Features • Surface mount type suitable for auto pick-and-place. • Reflow soldering compatible. • Supply voltage VDD3.3/5.0V available
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KV5032A
VC-FXO-65F
S30106)
KV5032Axx
xxxxC5SC00
VC-FXO-65F)
xxxxC3SC00
VC-FXO-65FL)
VC-FXO-35F
VC-FXO-35FL
VCXO-7050
kss 20MHZ
KSS 14318
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Untitled
Abstract: No abstract text available
Text: STRATUM -III SMD VCTCXO AST3 Pb RoHS Compliant FEATURES: FEATURES: • High Precision over temperature ±0.-37 ppm over -40°C to + 85°C • Excellent long term stability (±4.60 ppm Max. over 20-Year life) • Small Profile (7*5*2 mm) • Low Power (< 6mA CMOS; < 3.5mA Sinewave)
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20-Year
80MHz
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Untitled
Abstract: No abstract text available
Text: STRATUM -III SMD VCTCXO AST3 Pb RoHS Compliant FEATURES: FEATURES: • High Precision over temperature ±0.37 ppm over -40ºC to + 85ºC • Excellent long term stability (±4.60 ppm Max. over 20-Year life) • Small Profile (7*5*2 mm) • Low Power (< 6mA CMOS; < 3.5mA Sinewave)
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20-Year
80MHz
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Untitled
Abstract: No abstract text available
Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V
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S71WSxxxJ
16-bit)
66MHz
S71WS
S71WS256/128/064J
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S29WS128J-MCP
Abstract: S29WS128J S29WS-J S29WS064J
Text: S29WS-J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet S29WS-J Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,
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S29WS-J
16-Bit)
S29WS-J
S29WS128J-MCP
S29WS128J
S29WS064J
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