AMD reflow soldering profile BGA
Abstract: Theta JC of FBGA AM29LV800B thermal resistance solder paste 63sn alpha metal fbga thermal resistance fbga 12 x 12 thermal resistance smd codes marking A21 AMD thermal design retention mechanism FR4 substrate fiberglass AMD K6
Text: 5/11/99 Version 2.3 1999 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. This publication neither states nor implies any warranty of any kind, including but not limited to implied warrants of
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22247F
AMD reflow soldering profile BGA
Theta JC of FBGA
AM29LV800B thermal resistance
solder paste 63sn alpha metal
fbga thermal resistance
fbga 12 x 12 thermal resistance
smd codes marking A21
AMD thermal design retention mechanism
FR4 substrate fiberglass
AMD K6
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transistor smd G46
Abstract: fluke 52 k/j Thermocouple 7512 pin diodes in micro semi data sheet smd transistor marking ey SMD MARKING CODE h5 MCP Technology Trend BGA-64 pad AMD reflow soldering profile BGA SMD MARKING CODE l6 BGA Solder Ball 0.6mm
Text: FBGA User’s Guide Version 4.2 -XO\ 7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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N32-2400
22142J
transistor smd G46
fluke 52 k/j Thermocouple
7512 pin diodes in micro semi data sheet
smd transistor marking ey
SMD MARKING CODE h5
MCP Technology Trend
BGA-64 pad
AMD reflow soldering profile BGA
SMD MARKING CODE l6
BGA Solder Ball 0.6mm
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ST-03-Z-06E
Abstract: SHARP IC sharp lead free identification Z06E LH28F800BJE-PTTLZ1 QFN leadframe ST03Z
Text: Product Change Notification Type of Notification: Standalone IC products will incorporate Lead Pb -Free terminals ISSUE DATE LAST BUY DATE NOTIFICATION NO. LAST SHIP DATE January 23, 2004 — ST-03-Z-06E — This is to advise you that the following product(s) are being changed.
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ST-03-Z-06E
ST-03-Z-06E
SHARP IC
sharp lead free identification
Z06E
LH28F800BJE-PTTLZ1
QFN leadframe
ST03Z
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truth table for 8 to 3 decoder
Abstract: HY57V283220
Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as
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HY57V283220T-I/
HY5V22F-I
32Bit
HY57V283220T-I
HY5V22F-I
728-bit
576x32.
truth table for 8 to 3 decoder
HY57V283220
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Untitled
Abstract: No abstract text available
Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : new generation 0.2 : FBGA Ball configuration typo 수정 Functional Block Diagram A10 -> A11 DC Operation Condition 에서 VDDmin 수정 3.0V -> 3.135V Capacitance Value 수정 C11,3,5 -> 4pf / C12 3.8 ->4pf
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HY57V283220T/
HY5V22F
32Bit
HY57V283220T
400mil
86pin
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86-TSOP
Abstract: No abstract text available
Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of
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HY57V283220T/
HY5V22F
32Bit
HY57V283220T
HY5V22F
728-bit
576x32.
86-TSOP
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29LV160TE
Abstract: 29lv800ta Micron 512MB NOR FLASH 29F800TA 29F033C 29f400tc TSOP 48 Package 29f160te Micron 32MB NOR FLASH 29f002tc
Text: T H E Home Products P O S S I B I L I T I E S A R E I N F I N I T E Contacts Contents Introduction to Flash Memory MEMORY SOLUTIONS NOR-Flash MirrorFlashTM FCRAMTM – Fast Cycle Ram MCP – Multi-Chip Packages Packaging Technology NOR-FLASH, MIRRORFLASHTM,
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D-63303
F-94035
D-85737
I-20080
29LV160TE
29lv800ta
Micron 512MB NOR FLASH
29F800TA
29F033C
29f400tc
TSOP 48 Package
29f160te
Micron 32MB NOR FLASH
29f002tc
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Untitled
Abstract: No abstract text available
Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as
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HY57V283220T-I/
HY5V22F-I
32Bit
HY57V283220T-I
HY5V22F-I
728-bit
576x32.
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Untitled
Abstract: No abstract text available
Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as
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HY57V283220T-I/
HY5V22F-I
32Bit
HY57V283220T-I
HY5V22F-I
728-bit
576x32.
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Untitled
Abstract: No abstract text available
Text: Preliminary HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of
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HY57V283220T/
HY5V22F
32Bit
HY57V283220T
HY5V22F
728-bit
576x32.
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HY5V52CF
Abstract: No abstract text available
Text: HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hynix HY5V52CF is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V52CF is organized as 4banks of 2,097,152x32.
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HY5V52CF
32Bit
HY5V52CF
456bit
152x32.
90Ball
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CKE 2009
Abstract: H57V1262G DRAM memory H57V1262GFR
Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jul. 2009 Preliminary 1.0 Release Aug. 2009 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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128Mb
16bits
128Mbit
8Mx16bit)
H57V1262GFR
728bit
A10/AP
CKE 2009
H57V1262G
DRAM memory
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8MX16
Abstract: HY5V26E
Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Feb. 2005 1.1 Changed tOH Only Symbol ‘H’ : 2.5ns -> 2.7ns Apr. 2005 Remark
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128Mb
16bits
128Mbit
8Mx16bit)
HY5V26E
728bit
A10/AP
8MX16
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hy57v161610ftp
Abstract: 1MX16BIT HY57V161610f HY57V1616
Text: 16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jun. 2006 Preliminary 1.0 Final Version Release Jun. 2006 Final This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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16bits
16Mbit
1Mx16bit)
HY5V16FF6
216-bits
hy57v161610ftp
1MX16BIT
HY57V161610f
HY57V1616
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Untitled
Abstract: No abstract text available
Text: HY5V52CFP 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Bank x 2M x32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 Initial Draft May. 2003 0.2 1 Deleted Preliminary 2) Defined Input/Output Cap. Spec.
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HY5V52CFP
32Bit
x32Bit
HY5V52CFP
456bit
90Ball
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Untitled
Abstract: No abstract text available
Text: HY5V52CFP 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Bank x 2M x32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 Initial Draft May. 2003 0.2 1 Deleted Preliminary 2) Defined Input/Output Cap. Spec.
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HY5V52CFP
32Bit
x32Bit
HY5V52CFP
456bit
90Ball
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HY5V52CFP
Abstract: HY5V52CFPH
Text: Preliminary HY5V52CFP 4 Banks x 2M x 32Bit Synchronous DRAM Revision History 0.1 : New generation This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5V52CFP
32Bit
HY5V52CFP
456bit
152x32.
HY5V52CFPH
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Untitled
Abstract: No abstract text available
Text: HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hynix HY5V52CF is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V52CF is organized as 4banks of 2,097,152x32.
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HY5V52CF
32Bit
HY5V52CF
456bit
152x32.
90Ball
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Socket IC 80 pin LQFP
Abstract: V850E 150 MHz D70F3107 D70F3 4 pin surface mount crystal oscillator CD 5888 LQFP 128 pin Socket NEC lqfp 52 pogo pins V850E/MA1
Text: User’s Manual IE-703107-MC-EM1 In-Circuit Emulator Option Board Target Devices V850E/MA1 V850E/MA2 Document No. Date Published Printed in Japan U14481EJ3V0UM00 3rd edition August 2004 NS CP(K) [MEMO] 2 User’s Manual U14481EJ3V0UM Windows is either a registered trademark or a trademark of Microsoft Corporation in the United States
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IE-703107-MC-EM1
V850E/MA1
V850E/MA2
U14481EJ3V0UM00
U14481EJ3V0UM
Socket IC 80 pin LQFP
V850E 150 MHz
D70F3107
D70F3
4 pin surface mount crystal oscillator
CD 5888
LQFP 128 pin Socket
NEC lqfp 52
pogo pins
V850E/MA1
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4MX16
Abstract: 64MBIT
Text: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Dec. 2004 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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16bits
11Preliminary
64Mbit
4Mx16bit)
HY5V66E
864bit
A10/AP
4MX16
64MBIT
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HY5V26E
Abstract: No abstract text available
Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Feb. 2005 Remark This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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128Mb
16bits
128Mbit
8Mx16bit)
HY5V26E
728bit
A10/AP
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Untitled
Abstract: No abstract text available
Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Feb. 2005 Remark This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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128Mb
16bits
128Mbit
8Mx16bit)
HY5V26E
728bit
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Untitled
Abstract: No abstract text available
Text: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Dec. 2004 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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16bits
11Preliminary
64Mbit
4Mx16bit)
HY5V66E
864bit
A10/AP
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Untitled
Abstract: No abstract text available
Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release June. 2007 Remark This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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128Mb
16bits
128Mbit
8Mx16bit)
HY5V26F
728bit
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