86-TSOP
Abstract: No abstract text available
Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of
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HY57V283220T/
HY5V22F
32Bit
HY57V283220T
HY5V22F
728-bit
576x32.
86-TSOP
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pin diagram of 2 to 4 decoder
Abstract: HY57V283220 HY57V283220T HY5V22F
Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of
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HY57V283220T/
HY5V22F
32Bit
HY57V283220T
HY5V22F
728-bit
576x32.
pin diagram of 2 to 4 decoder
HY57V283220
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86-TSOP
Abstract: No abstract text available
Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of
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HY57V283220T/
HY5V22F
32Bit
HY57V283220T
HY5V22F
728-bit
576x32.
86-TSOP
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PDF
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truth table for 8 to 3 decoder
Abstract: HY57V283220
Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as
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HY57V283220T-I/
HY5V22F-I
32Bit
HY57V283220T-I
HY5V22F-I
728-bit
576x32.
truth table for 8 to 3 decoder
HY57V283220
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Untitled
Abstract: No abstract text available
Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as
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HY57V283220T-I/
HY5V22F-I
32Bit
HY57V283220T-I
HY5V22F-I
728-bit
576x32.
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1M x 32 x 4
Abstract: HY57V283220 HY57V283220T
Text: HY57V283220T 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The HY57V283220T is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T is organized as 4banks of 1,048,576x32.
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HY57V283220T
32Bit
HY57V283220T
728-bit
576x32.
400mil
1M x 32 x 4
HY57V283220
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HY57V283220
Abstract: HY57V283220T HY5V22FP
Text: HY57V283220T/ HY5V22FP 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : New generation This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY57V283220T/
HY5V22FP
32Bit
HY57V283220T
HY5V22FP
728-bit
HY57V283220
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Untitled
Abstract: No abstract text available
Text: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as
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HY57V283220T-I/
HY5V22F-I
32Bit
HY57V283220T-I
HY5V22F-I
728-bit
576x32.
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PDF
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Untitled
Abstract: No abstract text available
Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : new generation 0.2 : FBGA Ball configuration typo 수정 Functional Block Diagram A10 -> A11 DC Operation Condition 에서 VDDmin 수정 3.0V -> 3.135V Capacitance Value 수정 C11,3,5 -> 4pf / C12 3.8 ->4pf
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HY57V283220T/
HY5V22F
32Bit
11x13
DESCRIV22F
HY57V283220T
400mil
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Untitled
Abstract: No abstract text available
Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added 0.7 Changed FBGA Package Size from 11x13 to 8x13.
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HY57V283220T/
HY5V22F
32Bit
133MHz
11x13
an283220T
400mil
86pin
HY57V283220T
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Untitled
Abstract: No abstract text available
Text: Preliminary HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of
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HY57V283220T/
HY5V22F
32Bit
HY57V283220T
HY5V22F
728-bit
576x32.
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Untitled
Abstract: No abstract text available
Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of
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HY57V283220T/
HY5V22F
32Bit
HY57V283220T
HY5V22F
728-bit
576x32.
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PDF
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Untitled
Abstract: No abstract text available
Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : new generation 0.2 : FBGA Ball configuration typo 수정 Functional Block Diagram A10 -> A11 DC Operation Condition 에서 VDDmin 수정 3.0V -> 3.135V Capacitance Value 수정 C11,3,5 -> 4pf / C12 3.8 ->4pf
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HY57V283220T/
HY5V22F
32Bit
HY57V283220T
400mil
86pin
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k4s643232f
Abstract: KS RMII Reduced MII aa2c "routing tables"
Text: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks
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TXC-05870
TXC-05870-MB,
TXC-05870
k4s643232f
KS RMII Reduced MII
aa2c
"routing tables"
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TCXO A31 10MHZ
Abstract: MT48LC4M32B2TG-6 L1V16 Datum OCXO
Text: PRELIMINARY PRODUCT BRIEF: SUBJECT TO CHANGE Rev: 091407 DS34S108, DS34S104, DS34S102, DS34S101 Description Abridged General Description Features The IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC draft-compliant DS34S108 allows up to eight T1/E1 links or frame-based serial HDLC links to be
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DS34S108,
DS34S104,
DS34S102,
DS34S101
DS34S108
823/G
board25
DS34S108
TCXO A31 10MHZ
MT48LC4M32B2TG-6
L1V16
Datum OCXO
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Untitled
Abstract: No abstract text available
Text: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial
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DS34S101,
DS34S102,
DS34S104,
DS34S108
823/G
DS34S10x
DS34S101
DS34S102
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TXC-06010-MB
Abstract: TXC-06010 samsung Capacitance lables transwitch packettrunk fifo synchronus asynchronus PacketTrunk
Text: PacketTrunk-4 Plus Device TDMoIP/MPLS Gateway Device TXC-06010 DATA SHEET PRODUCT PREVIEW TXC-06010-MB, Ed. 2 June 2006 FEATURES APPLICATIONS • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC interface via MII/RMII/SMII/SSMII; HDX or
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TXC-06010
TXC-06010-MB,
TXC-06010-MB
TXC-06010
samsung Capacitance lables
transwitch packettrunk
fifo synchronus asynchronus
PacketTrunk
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Untitled
Abstract: No abstract text available
Text: Rev: 032609 DS34S101, DS34S102, DS34S104, DS34S108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial
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DS34S101,
DS34S102,
DS34S104,
DS34S108
DS34S101
DS34S102
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Untitled
Abstract: No abstract text available
Text: PacketTrunk-4 Device TDMoIP/MPLS Gateway Device TXC-05870 DESCRIPTION • Four T1/E1/Serial or one T3/E3/STS-1 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC, interface via MII/RMII/SMII/SSMII; HDX or FDX • VLAN support per IEEE 802.1 p & Q • Four independent advanced clock recovery blocks
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TXC-05870
TXC-05870-MB,
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RFC-5087
Abstract: TXC-06010AIBG TXC-06010-MB K4S283232E 0X0076 cesopsn TXC-06010
Text: PacketTrunk-4 Plus Device TDM-over-Packet Gateway Device TXC-06010 DATA SHEET PRELIMINARY TXC-06010- MB, Ed. 6 December 2009 FEATURES APPLICATIONS • Four T1/E1/Serial or one T3/E3 TDM interfaces • One 10/100 Ethernet IEEE 802.3 MAC interface via MII/RMII/SMII/SSMII;HDX or
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TXC-06010
TXC-06010-
TXC-06010-MB,
RFC-5087
TXC-06010AIBG
TXC-06010-MB
K4S283232E
0X0076
cesopsn
TXC-06010
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um61256
Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D
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PD4218165
PD424260
PD431000A
PD43256B
PD441000L-B
PD442000L-B
PD442012L-XB
PD444012L-B
PD4504161
um61256
um611024
SRAM 64KX8 5V
A29F002
TC51V4265
rom at29c010
WINBOND cross reference MT48LC8M16A2
ks0723
k4s561632
IDT72V245
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um61256
Abstract: hynix hy57v281620 hy57v641620 cross reference WINBOND Serial flash cross reference UM611024 256k x8 SRAM 28F160S3 Samsung EOL "DDR1 SDRAM" 1MX8/512KX16
Text: Cross Reference Your Memory Provider Part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D AM29DL164C/D AM29F002B AM29F010
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PD4218165
PD424260
PD431000A
PD43256B
PD441000L-B
PD442000L-B
PD442012L-XB
PD444012L-B
PD4504161
um61256
hynix hy57v281620
hy57v641620 cross reference
WINBOND Serial flash cross reference
UM611024
256k x8 SRAM
28F160S3
Samsung EOL
"DDR1 SDRAM"
1MX8/512KX16
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PDF
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diode CH9d
Abstract: CH7C diode CH8C diode diode ch6b rg703 Diode TS21C diode code eb13 RFC-5087 10407C 2125S
Text: 19-4835; 8/09 DS34T101, DS34T102, DS34T104, DS34T108 Single/Dual/Quad/Octal TDM-over-Packet Chip General Description These IETF PWE3 SAToP/CESoPSN/TDMoIP/HDLC compliant devices allow up to eight E1, T1 or serial streams or one high-speed E3, T3, STS-1 or serial
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DS34T101,
DS34T102,
DS34T104,
DS34T108
823/G
DS34T108.
DS34T104.
diode CH9d
CH7C diode
CH8C diode
diode ch6b
rg703 Diode
TS21C
diode code eb13
RFC-5087
10407C
2125S
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PDF
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HY57V283220
Abstract: No abstract text available
Text: HY57V283220 L T(P)/ HY5V22(L)F(P) 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1) 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added
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HY57V283220
HY5V22
32Bit
133MHz
11x13
Page15)
400mil
86pin
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