transistor f422
Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for
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50-MICRON
PD658xx
transistor f422
transistor f423
f422 transistor
transistor f421
BV09
F423
fet 13187
RJ4B
L442
bvoe
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se617
Abstract: vhdl code for 74192 UPD65891 a1387 transistor F495 transistor f422 equivalent tt 2246 Transistor TT 2246 transistor f422 UPD65883
Text: Design Manual CMOS-N5 Series CMOS Gate Array Ver. 7.0 Document No. A13826EJ7V0DM00 7th edition Date Published March 2004 N CP(K) c Printed in Japan [MEMO] 2 Design Manual A13826EJ7V0DM NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the
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A13826EJ7V0DM00
A13826EJ7V0DM
se617
vhdl code for 74192
UPD65891
a1387
transistor F495
transistor f422 equivalent
tt 2246
Transistor TT 2246
transistor f422
UPD65883
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: uPD65837 uPD65869 X17512 upd65839 RF Transistors Ceramic MARKING F25 marking code F302 535 D65841 uPD65851 X46358
Text: Design Manual CMOS-8L Family CMOS Gate Array Ver. 5.0 Document No. A12158EJ5V0DM00 5th edition Date Published June 1999 N CP(K) 1997, 1998 Printed in Japan 1 [MEMO] 2 Design Manual A12158EJ5V0DM00 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
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A12158EJ5V0DM00
Semiconductor2/9044
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
uPD65837
uPD65869
X17512
upd65839
RF Transistors Ceramic MARKING F25
marking code F302 535
D65841
uPD65851
X46358
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bv0T
Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high
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50-MICRON
PD658xx
bv0T
F423
FV06
RJ4B
83YL-9164B
"Single-Port RAM"
B00J
transistor f423
bewf
diode ru4d
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nec 2561 equivalent
Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
Text: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such
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41005-TC
Abstract: 43806-TC 43615-TC 43806TC ZF-42206-TC-PO 42106 K MAGNETICS 42206-tc TV-B2206-6A TV-H4916-4A 41406-TC
Text: Section 13. Toroids Ferrite toroids offer high magnetic efficiency as there is no air gap, and the cross sectional area is uniform. Available in many sizes O.D.’s from .100" to 3.375" , and materials (permeabilities from 750 to 15,000), this section lists
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SM-C0301-6A
SM-C0601-8A
SM-H0502-5A
SM-H0705-8A
41005-TC
43806-TC
43615-TC
43806TC
ZF-42206-TC-PO
42106 K MAGNETICS
42206-tc
TV-B2206-6A
TV-H4916-4A
41406-TC
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NEC 2561
Abstract: transistor f422 transistor f423 nec 2561 equivalent transistor f422 equivalent transistor NEC D 882 p verilog code for 8254 timer TBA 931 nec d 882 p datasheet nec 2561 datasheet
Text: CB-C7, 3-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. Preliminary October 1993 Description Figure 1. Integrated HDD Solution with CB-C7 Cell-Based ASIC and Embedded Megafunctions The CB-C7, 3-volt cell-based product family is intended for low power portables and battery-operated products. A
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a2305
Abstract: 80386EX es relay RAS 1210 EV386EX 0F804H PS5 1020 a2400 Ps3 MOTHERBOARD CIRCUIT diagram Intel386 SX a2531
Text: Intel386 EX Embedded Microprocessor User’s Manual Intel386™ EXTB Embedded Microprocessor Intel386™ EXTC Embedded Microprocessor Intel386™ EX Embedded Microprocessor User’s Manual 1996 Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of
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Intel386TM
Index-11
a2305
80386EX
es relay RAS 1210
EV386EX
0F804H
PS5 1020
a2400
Ps3 MOTHERBOARD CIRCUIT diagram
Intel386 SX
a2531
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a2531
Abstract: MCR 22-B 409 240331 80386EX Ps3 MOTHERBOARD CIRCUIT diagram MT 1336 Ei type CORE BV4 INTEL 386EX a2400 386ex ssio
Text: Intel386 EX Embedded Microprocessor User’s Manual Intel386™ EXTB Embedded Microprocessor Intel386™ EXTC Embedded Microprocessor Intel386™ EX Embedded Microprocessor User’s Manual 1996 Order Number 272485-002 Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of
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Intel386TM
Index-11
a2531
MCR 22-B 409
240331
80386EX
Ps3 MOTHERBOARD CIRCUIT diagram
MT 1336
Ei type CORE BV4
INTEL 386EX
a2400
386ex ssio
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Burndy PAT750-18V parts breakdown
Abstract: BURN GI CONDUIT lp 1610 for door bell Burndy Y35 hypress parts breakdown ci an 7591 NEC c317 KPC 45 94V SAE-AS7928 burndy Y35 Hypress owner manual burndy patriot pat750-18v replacement parts
Text: Master Catalog Solutions for the Electrical Industry Experience. Technology. Answers. TM Customer Service Department 7 Aviation Park Drive Londonderry, NH 03053 1-800-346-4175 1-603-647-5299 International Canada 1-800-361-6975 (Quebec) 1-800-387-6487 (All other provinces)
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a2531
Abstract: transistor a2431 8257A A2757 a2430 A2393 a2400 a2529 A2527 a2495
Text: Intel386 EX Embedded Microprocessor User’s Manual title.fm4 Page i Tuesday, August 15, 1995 3:01 PM Intel386™ EX Embedded Microprocessor User’s Manual February 1995 title.fm4 Page ii Tuesday, August 15, 1995 3:01 PM Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including
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Intel386TM
Index-10
a2531
transistor a2431
8257A
A2757
a2430
A2393
a2400
a2529
A2527
a2495
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Mitsubishi th-n20kp
Abstract: AD16-22DS Kyoritsu 3301 kyoritsu model 1008 terasaki xh100ns KSD 166 16a 250v ksd 302 250v, 10a carlo gavazzi VDE 0660 ksd 250v 10a EEL 22w transformer
Text: CONTENT KIN AUTOMATI ON SDN. BHD. ANDELI Bus bar Support Power Supply MCB Bar Contactor / Thermal Overload Relay / Auxiliary Contact Terminal Block Din Rail Terminal Block C/W Cover Terminal Block Float Switch Foot Switch Warning Light / Tower Light Hour Run Meter / Time Switch / Weather Proof Isolating Switch
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100HP)
125HP)
112KW
150HP)
135KW
180HP)
150KW
200HP)
164KW
220HP)
Mitsubishi th-n20kp
AD16-22DS
Kyoritsu 3301
kyoritsu model 1008
terasaki xh100ns
KSD 166 16a 250v
ksd 302 250v, 10a
carlo gavazzi VDE 0660
ksd 250v 10a
EEL 22w transformer
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transistor f422
Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
Text: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high
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OCR Scan
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xPD658xx
transistor f422
transistor f423
BKDF
f422 transistor
B00J
f422
F423
fet 13187
RJ4B
ru4f
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PDF
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transistor f422
Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Text: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform
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OCR Scan
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iPD658xx
transistor f422
transistor f423
F422 transistor
transistor f421
nec product naming rule
BK-DK
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upd6500
Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
Text: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5
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CMOS-6A
Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking
Text: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC
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OCR Scan
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IP-8090
CMOS-6A
F223
65630
F304
f422
F501 MOS
l442
bt08
700201
L421 Marking
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ru4f
Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
Text: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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OCR Scan
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IEU-7922,
IP-8090
ru4f
F422
F423
rj8b
"Single-Port RAM"
TT 2246
RU89
BE09
L737
f425
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65630
Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
Text: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform
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OCR Scan
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IEU-7922,
IP-8090
65630
RK4B
83nr-7843b
ru4f
RJ49
RJ4B
NEC uPD 65658
transistor f423
F423
L442
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D65806
Abstract: 9215K1
Text: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications
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OCR Scan
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65-MICRON
xPD65800
D65806
9215K1
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PDF
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J18M
Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
Text: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform
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OCR Scan
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D65842
Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Text: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform ance, sub-micron gate arrays, targeted for applications
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OCR Scan
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jPD65800
D65842
diode ru4d
136-Pin
CMOS7
BV09
180 nm CMOS standard cell library Synopsys
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PDF
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D65806
Abstract: No abstract text available
Text: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s
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OCR Scan
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65-micron
D65806
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PDF
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bv0T
Abstract: 658X
Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per
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OCR Scan
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b4E75S5
QQ3T701
nPD658xx
bv0T
658X
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diode ru4d
Abstract: ru4f bvde RJ4B 364-pin ITT 2222 A rj8b diode ru4d compatible "RJ-49" FWB1
Text: C M O S -8 L 3 -V O L T , 0 .5 0 -M IC R O N C M O S G A TE A R R A YS NEC Electronics Inc. P r e lim in a r y Description February 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS- 8 L family consists of ultra-high per fo rm a n c e , s u b -m ic ro n g a te a rra y s , ta rg e te d fo r
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OCR Scan
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aPD658xx
diode ru4d
ru4f
bvde
RJ4B
364-pin
ITT 2222 A
rj8b
diode ru4d compatible
"RJ-49"
FWB1
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