FAST RECOVERY DIODE 200ns
Abstract: fast recovery diode 1a trr 200ns fast recovery diode 2a trr 200ns TO3 package RthJC diode 15A FAST RECOVERY DIODE 200ns 2a NTE6200 NTE6202 NTE6206 NTE6208
Text: NTE6200 thru NTE6210 Positive Center Tapped Silicon Recitifers 30 Amp 15A per diode Features: D D D D Available in Standard (NTE6200 & NTE6202) and Fast (NTE6206 thru NTE6210) Recovery 250 Amps Peak One Half Cycle Surge Current Fast Recovery Types: trr = 200ns Max
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NTE6200
NTE6210
NTE6200
NTE6202)
NTE6206
NTE6210)
200ns
NTE6200,
NTE6206
NTE6202,
FAST RECOVERY DIODE 200ns
fast recovery diode 1a trr 200ns
fast recovery diode 2a trr 200ns
TO3 package RthJC
diode 15A
FAST RECOVERY DIODE 200ns 2a
NTE6202
NTE6208
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K06N60
Abstract: fast recovery diode 2a trr 200ns SKB02N60
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
P-TO-263-3-2
O-263AB)
K06N60
fast recovery diode 2a trr 200ns
SKB02N60
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fast recovery diode 2a trr 200ns
Abstract: fast recovery diode 1a trr 200ns K06N60 Q67040-S4214
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
fast recovery diode 2a trr 200ns
fast recovery diode 1a trr 200ns
K06N60
Q67040-S4214
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fast recovery diode 2a trr 200ns
Abstract: vvvf motor QCA100BA60 600v 2A ultra fast recovery diode dc motor control 100A Darlington 300v
Text: TRANSISTOR MODULE Hi- QCA100BA60 UL;E76102 M QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is
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QCA100BA60
E76102
QCA100BA60
200ns)
130mA
fast recovery diode 2a trr 200ns
vvvf motor
600v 2A ultra fast recovery diode
dc motor control 100A
Darlington 300v
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K06N60
Abstract: fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
K06N60
fast recovery diode 2a trr 200ns
PG-TO-220-3-1
SKP02N60
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
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K06N60
Abstract: SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
P-TO-220-3-45
K06N60
SKB02N60
200v 1.5v 3a diode
400v 3a low vf diode
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Untitled
Abstract: No abstract text available
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKB02N60
SKB02N60
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
SKP02N60
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Untitled
Abstract: No abstract text available
Text: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for: - Motor controls
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SKP02N60
PG-TO-220-3-1
O-220AB)
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SKB02N60
Abstract: SKP02N60 200v 1.5v 3a diode
Text: SKP02N60 SKB02N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
SKB02N60
O-220AB
Q67040-S4214
O-263AB
Q67040-S4215
Mar-00
SKB02N60
SKP02N60
200v 1.5v 3a diode
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K06N60
Abstract: SKB02N60 PG-TO-263-3-2
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,
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SKB02N60
PG-TO-263-ain
K06N60
SKB02N60
PG-TO-263-3-2
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Untitled
Abstract: No abstract text available
Text: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for frequency inverters for washing machines,
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SKB02N60
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E2 diode
Abstract: Diode B2x
Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1
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QCA30B/QCB30A40/60
E76102
QCA30B
QCB30A
110TAB
94max
32max
31max
35max
400/600V
E2 diode
Diode B2x
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Q67040-S4215
Abstract: SKB02N60 SKP02N60
Text: SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
SKB02N60
P-TO-220-3-1
O-220AB)
P-TO-263-3-2
O-263AB)
Jul-02
Q67040-S4215
SKB02N60
SKP02N60
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Untitled
Abstract: No abstract text available
Text: SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP02N60
SKB02N60
SKB02N60
O-220AB
O-263AB
Q67040-S4214
Q67040-S4215
Dec-01
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K02N120
Abstract: No abstract text available
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs
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SKB02N120
40lower
P-TO-263-3-2
O-263AB)
SKB02N120
K02N120
K02N120
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K02N120
Abstract: fast recovery diode 1a trr 200ns
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:
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SKB02N120
P-TO-220-3-45
SKB02N120
K02N120
fast recovery diode 1a trr 200ns
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k02n120
Abstract: PG-TO-263-3-2 SKB02N120 k02n12
Text: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,
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SKB02N120
PG-TO-263-3-2
k02n120
PG-TO-263-3-2
SKB02N120
k02n12
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K04N60
Abstract: SKP04N60 PG-TO-220-3-1
Text: SKP04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP04N60
PG-TO-220-3-1
O-220AB)
K04N60
SKP04N60
PG-TO-220-3-1
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K04n60
Abstract: No abstract text available
Text: SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter
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SKB04N60
O-220,
SKB04N60
K04n60
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K04N60
Abstract: No abstract text available
Text: SKP04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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Original
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PDF
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SKP04N60
PG-TO-220-3-1
O-220AB)
SKP04N60
K04N60
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Untitled
Abstract: No abstract text available
Text: SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 s Designed for frequency inverters for washing machines,
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SKB04N60
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SKB04N60
Abstract: SKP04N60 Q67040-S4229
Text: SKP04N60 SKB04N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls
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SKP04N60
SKB04N60
O-220AB
Q67040-S4216
O-263AB
Q67040-S4229
Mar-00
SKB04N60
SKP04N60
Q67040-S4229
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