Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> FA01317 GaAs FET HYBRID IC DESCRIPTION FA01317 is RF Hybrid IC designed for 1.5GHz band small size hand held radio. FEATURES • • • • • High efficiency High power High gain Small size Frequency range 35 % 31 (dBm)
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FA01317
FA01317
M5M27C102P,
RV-15
16-BIT)
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Untitled
Abstract: No abstract text available
Text: bSM'îflS'î 001Ô071 MITSUBISHI SEMICONDUCTOR <GaAs FET> Ì SO FA01317B G aA s F E T H Y B R ID 1C DESCRIPTION F A 0 1 3 1 7 is RF Hybrid IC designed fo r 1 .5 G H z band small size hand held radio. FEATURES • High efficiency 3 5 % • High po w er 3 0 . 5 (dBm )
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FA01317B
50kHz
100kHz
1441M
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f7108
Abstract: FA01317 F7132P F7122
Text: • GaAs FET MODULE FOR HANDY PHONE Max. ratings Application Type No. Po min Va (V) v« (V) h (A) mm max min max (V) Vn (V) f(M H ï) % Stad P in Hanw (max) (min) (dB) ( - ) VT TciOP) CC) (min) Pin (dBm) (dBm) (% ) FAQ13I4 1 7 1 0 - 1785MHz,32.5dBm Power AMP. PCN
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FAQ13I4
FA01317
FA013I9A
FA012I5
FA01216
FA012I9
FA01220
1785MHz
1453MHz
1890to
f7108
F7132P
F7122
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