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    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ^24102^ ÜGlñOti? M5T FA01216 G aA s FET H Y B R ID IC D E S C R IP T IO N F A01216 is RF Hybrid IC designed for 800M H z band small size handheld radio. FEATURE • • • • Low voltage High gain High efficiency Small size


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    f7108

    Abstract: FA01317 F7132P F7122
    Text: • GaAs FET MODULE FOR HANDY PHONE Max. ratings Application Type No. Po min Va (V) v« (V) h (A) mm max min max (V) Vn (V) f(M H ï) % Stad P in Hanw (max) (min) (dB) ( - ) VT TciOP) CC) (min) Pin (dBm) (dBm) (% ) FAQ13I4 1 7 1 0 - 1785MHz,32.5dBm Power AMP. PCN


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