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    F8707G Price and Stock

    Infineon Technologies AG IRF8707GPBF

    MOSFET N-CH 30V 11A 8SO
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    DigiKey IRF8707GPBF Tube
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    Infineon Technologies AG IRF8707GTRPBF

    MOSFET N-CH 30V 11A 8SO
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    DigiKey IRF8707GTRPBF Digi-Reel 1
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    IRF8707GTRPBF Reel
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    International Rectifier IRF8707GPBF

    HEXFET POWER MOSFET Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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    ComSIT USA IRF8707GPBF 1,140
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    F8707G Datasheets Context Search

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    F8707G

    Abstract: f8707 IRF8707G
    Text: IRF7341GPbF • Advanced Process Technology • ÿDual N-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ Repetitive Avalanche Allowed up to Tjmax • ÿLead-Free • ÿHalogen-Free VDSS 55V Description These HEXFET Power MOSFET’s in a Dual SO-8 package


    Original     		PDF IRF7341GPbF D-020D F8707G f8707 IRF8707G

    f8707

    Abstract: F8707G IRF8707G isd xxxx IRF8707GPBF IONAL
    Text: PD - 96252A IRF7416GPbF HEXFET Power MOSFET l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Halogen-Free A D 1 8 S 2 7 D S 3 6 D G 4 5


    Original     		PDF 6252A IRF7416GPbF EIA-481 EIA-541. f8707 F8707G IRF8707G isd xxxx IRF8707GPBF IONAL

    F8707G

    Abstract: F8707
    Text: PD - 96252A IRF7416GPbF HEXFET Power MOSFET l l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free Halogen-Free A D 1 8 S 2 7 D S 3 6 D 4 5 D


    Original     		PDF 6252A IRF7416GPbF EIA-481 EIA-541. F8707G F8707