S0540
Abstract: KFS1
Text: ional Frequency Synthesizer 0.5 to 4GHz The content of this specification may change without notification 1/28/10 Coaxial ional Frequency Synthesizer 0 . 5 to 4GHz Fract ional F requ en cy Synt hesizers F req. Step Pow er R ang e Size O utp ut G Hz
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S0540
13dBm
3x10-6
S0540
KFS1
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FL014
Abstract: 314P
Text: PD- 95227 IRFL014PbF _Lead-Free 1 IRFL014PbF 2 IRFL014PbF SOT-223 TO-261AA Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXF ET PRODUCT MARKING T HIS IS AN IRF L014 INT ERNAT IONAL RECT IF IER LOGO
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IRFL014PbF
OT-223
O-261AA)
FL014
314P
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AN-994
Abstract: irf 210a
Text: IRF1405S/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 02, 2000 IN T HE AS S E MB L Y L INE "L " INT E RNAT IONAL RE CT IF IER L OGO Note: "P" in as s embly line
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IRF1405S/LPbF
F530S
AN-994.
AN-994
irf 210a
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IRFD120
Abstract: No abstract text available
Text: PD- 95927 IRFD110PbF Lead-Free 1 IRFD110PbF 2 IRFD110PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE
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IRFD110PbF
IRFD120
IRFD120
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IRF 504
Abstract: irf 418
Text: PD - 95132 IRF6215S/LPbF • Lead-Free 1 IRF6215S/LPbF 2 IRF6215S/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF 530S WIT H LOT CODE 8024 AS SEMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INTERNAT IONAL RECTIF IER LOGO ASS EMBLY
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IRF6215S/LPbF
F530S
EIA-418.
IRF 504
irf 418
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F530S
Abstract: IRF530S IRF5305S
Text: PD - 95957 IRF5305S/LPbF • Lead-Free www.irf.com 1 IRF5305S/LPbF 2 IRF5305S/LPbF D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER
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IRF5305S/LPbF
IRF530S
F530S
EIA-418.
F530S
IRF5305S
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P4KE10
Abstract: P4KE10A P4KE11 P4KE11A E200 E220 E400 P4KE12 P4KE15A p4ke10c
Text: GLASS PA SSIV ATED UNIDIREC IONAL AND BIDIRECT IONAL TRANSIE NT V OL TA GE S UPPRESS ORS REVERSE VOLTAGE - 6.8 to 60VOLTS FORWARD CURRENT - 400 Amperes DO-41 FEATURES Low Leakage Uni and ional unit Excellent clamping capability Plastic material has UL recognition 94V-0
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60VOLTS
DO-41
P4KE47CA
P4KE51
P4KE51C
P4KE51A
P4KE51CA
P4KE56C
P4KE56
P4KE56A
P4KE10
P4KE10A
P4KE11
P4KE11A
E200
E220
E400
P4KE12
P4KE15A
p4ke10c
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Untitled
Abstract: No abstract text available
Text: SDTB6D8Q Semiconductor ESD Protection Diode Features • • • • Transient prot ect ion for dat a lines t o I EC 61000- 4- 2 ESD 15KV( air) , 8KV( cont act ) Sm all package for use in port able elect ronics Bidirect ional t ype pin configurat ion st ruct ure.
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KSD-D6D008-000
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Untitled
Abstract: No abstract text available
Text: S4558P Semiconductor Low Noise Dual OP AMP Description The S4558 is a m onolit hic I nt egrat ed Circuit designed for dual operat ional am plifier. Features • • • • • • Power consum pt ion as sm all as about 50m W t yp. Built- in out put short- circuit prot ect ing circuit .
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S4558P
S4558
KSD-I1E006-001
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Untitled
Abstract: No abstract text available
Text: SN4560 Semiconductor Dual high slew rate OP AMP http:// www.auk.co.kr Description The SN4560 is dual operat ional am plifiers which achieve approxim at ely t wice t he high out put current of t he SN4560, as well as feat uring a higher slew rat e of 4V/ us, a gain band
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SN4560
SN4560
SN4560,
10MHz,
KSD-I7F023-000
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DSAIH0002555
Abstract: No abstract text available
Text: B K C INTERN AT IONAL Ü3E D | 117 ^ T ö 3 □□□□QÛ3 4 | T y p e N o .1 N 6 5 T - 0 f - o 7 GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES Low forward voltage drop— low power consumption
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MIL-S-19500,
DSAIH0002555
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s300h
Abstract: No abstract text available
Text: I N T E R N A T IONAL RECTIFIER I« R | ~D5 DÌf| 4fl554SE 00D7b7S T 1 ~ T ~ /? Jata Sheet No. PD-3.129 in t e r n a t io n a l. r e c t if ie r S30D & S30DH SERIES 800-200 VOLTS RANGE 470 AMP RMS, RING AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs
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4fl554SE
00D7b7S
S30DH
PARAM30
T0-209AE
O-118]
T0-209AD
-108J)
T-25-19
s300h
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77077-1
Abstract: No abstract text available
Text: r 7 THIS C DRAWI NG COPYRIGHT 15 U N P U B L I S H E D . 19 RELEASED BY AMP I N C OR P O R A T E D . ALL FOR P U B L I C A T I O N R1GHIS 6 4 5 3 2 19 LOC RL bLRVLD. CM DI ST REVISIONS 53 DESCRIPTION D REV A MP ON OPPOSITE OPT IONAL g REDWN LOGO THIS PER
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0L30-0241-97
27JUN96
31-OCT-97
77077-1
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Untitled
Abstract: No abstract text available
Text: 1-134793-2 50a RG 58 5. 3 1-134793-1 75o RG 59 - RG 62 6.6 COMHERCI AL 134793-2 50o RG 58 5.3 feMMTflloU 134793-1 75o RG 59 - RG 62 6.6 VERSION P/N AMP IMPEDANCE CABLE 0 INT PROFESS IONAL COTES DE DENUDAGEs 14.0 NUMERO ’ S — t r A f* INCJMRQRATED MX RI«MTS
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MN1 transistor
Abstract: BUK436-200B LTO 100 F BUK436-200A
Text: PHILIPS INTER NAT IONAL L5 E D • 7 1 1 0 fl5 b ODbB^Dl ObS BiPHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110fl5b
BUK436-200A/B
BUK436
-200A
-200B
71106Eb
MN1 transistor
BUK436-200B
LTO 100 F
BUK436-200A
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Untitled
Abstract: No abstract text available
Text: ^ " • , 4 ] ' iWtMG M ADE JS TH iR O A N C ^S PR O JEC T iO * p - ?ATt: G t S C » i P " *C.K r " r ^ o ~°T- >TO « SHeo - >. -r P E V iS IC N S 1 ^ C O P ^ i^ H T 3V A M P v ;0 ^ ~ C -f> A T C ^ , A l_L IHT CRNAT IONAL R lG riT S P t S W v - ' H . A iV* F iKCOW^O t *<' ^.- i- r O l.'J i'T :
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Untitled
Abstract: No abstract text available
Text: DRAWING MADE IN TmIRO ANGLE PR O JE C TIO N T H / 5 DPAWÍNG 15 U N P U B L Í5 H E D . C COPYRIGHT i 3 R ELEA SED FOR PUSL J CA T I ON BY AMP INCORPORATED. ALL JNTERNAT IONAL ,7 9 o 2 LOC AF RIG HTS RESERVED. R E V [5 I0N5 D IS T 50 P F ZONE LTR D E S C R IP T IO N
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AF-7184
1/24/9I
I/24/9T
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PDF
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74c920
Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ ITSU EDI HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous
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256x4,
HM-6508
HM-6518
HM-6551
HM-6561
74C929
74C930
74C920
HM-6504
74c920
ram 6164
6116 RAM
2116 ram
2064 ram
4016 RAM
4045 RAM
6264 cmos ram
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RCA-40841
Abstract: A3060 rca CA3080
Text: ional Amplifiers Î Ï ! H A R R IS CA3060 A pplications: • Low p o w e r co nsu m p tio n - as lo w as 100 m W p e r am plifier u Independent bia sin g fo r each am plifier m High fo rw ard tra n sco nd u cta n ce u P rogram m able range o f in p u t ch ara cteristics
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CA3060
RCA-40841
A3060
rca CA3080
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74151APC
Abstract: of ic 74ls151 pin d 74151ADC 74LS151PC 74ls151 54151A TPL-34/12X46F
Text: N AT IONAL SEMICOND -CLOGIO DEE D 1 0 1 I bSDiiBE OGbaaafi 4 I C O N N E C T IO N D IA G R A M PIN O U T A T-66-21-53 54/74151A 54S/74S151 54LS/74LS151 13[T 8 -IN P U T M U L T IP L E X E R Vcc I2 U D m Il [ I 7 3 Is io [ T 13] 16 z[s m I? zK 1 Î] So iE TÖ] S i
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54/74151A
54S/74S151
54LS/74LS151
T-66-21-53
54/74S
54/74LS
74151APC
of ic 74ls151 pin d
74151ADC
74LS151PC
74ls151
54151A
TPL-34/12X46F
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Untitled
Abstract: No abstract text available
Text: 899A N AT IONAL SEMICONJ L06IC) tlE D • bS01122 007353^ 'JOS M N S C l T - ä 2-;?äH 3 ional Semiconductor 74FCT899A 9-Bit Latchable Transceiver with Parity Generator/Checker General Description Features The ’FCT899A is a 9-bit to 9-bit parity transceiver with trans
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L06IC)
bS01122
74FCT899A
FCT899A
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Untitled
Abstract: No abstract text available
Text: Ille Rechte Vorbehalten/ H U rigkts n u m i RECOM M ENDED PANEL CUTOUT D IM EN S IO N S 03,O5.g;o5 10" 2,77 13,03*0,13-front 11,4*0,13-rear e Typ. rear mount 6,52*0,13-front mount 5,71*0,13-rear opt ional mount only mount mount 4 4,27*o,13-front 1 4 2 , 52*o,13-rear
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13-front
13-rear
13-rear
F-95972
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Untitled
Abstract: No abstract text available
Text: HARKTECH INTER NAT IONAL DÖE D | 57 *1 ^ 5 5 G D D D S 41 2 | _ - r - ¥ / - % 3 T - w - m _ P h o t o I C ’S SWITCHING CHARACTERISTICS . RECOMMENDED OPERATING CONDITIONS CHARACTERISTICS SYM UNIT MT22000 MT6510 MT6500 min — Input Current - Low Level
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MT22000
MT6510
MT6500
MT2531Ã
MT25300
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LCX573
Abstract: DIODE B97 74LCX573 74LCX573MSA 74LCX573MSAX 74LCX573SJ 74LCX573SJX 74LCX573WM 74LCX573WMX LCX373
Text: LCX573 & Nat ional Semiconductor 74LCX573 Low Voltage Octal Latch with 5V Tolerant Inputs and Outputs General Description Features The 'LCX573 is a high-speed octal latch with buffered com mon Latch Enable LE and buffered common Output En able (OE) inputs.
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74LCX573
LCX573
LCX373
b501122
DIODE B97
74LCX573
74LCX573MSA
74LCX573MSAX
74LCX573SJ
74LCX573SJX
74LCX573WM
74LCX573WMX
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