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    F852 TRANSISTOR Search Results

    F852 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    F852 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SI4532DY

    Abstract: F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		Si4532DY -30Voduct F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		NDS9925A OT-23 PDF

    NDS9945

    Abstract: 9945 motor 9945 So-8 ic 9945 a 8 pin F011 F63TNR F852 L86Z SOIC-16
    Text: May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS9945 OT-23 NDS9945 9945 motor 9945 So-8 ic 9945 a 8 pin F011 F63TNR F852 L86Z SOIC-16 PDF

    CBVK741B019

    Abstract: F63TNR F852 FDR835N NDH8301N
    Text: December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDH8301N CBVK741B019 F63TNR F852 FDR835N NDH8301N PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 L86Z NDS9405
    Text: February 1996 NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS9405 CBVK741B019 F011 F63TNR F852 L86Z NDS9405 PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 L86Z NDS9947
    Text: February 1996 NDS9947 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS9947 CBVK741B019 F011 F63TNR F852 L86Z NDS9947 PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8410A
    Text: March 1997 NDS8410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS8410A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS8410A PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8426
    Text: September 1997 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS8426 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS8426 PDF

    F852 transistor

    Abstract: NDS9925A F011 F63TNR F852 L86Z SOIC-16 S237
    Text: May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		NDS9925A OT-23 F852 transistor NDS9925A F011 F63TNR F852 L86Z SOIC-16 S237 PDF

    gs 9412

    Abstract: F011 F63TNR F852 FDS9412 L86Z SOIC-16 D1294
    Text: November 1997 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		FDS9412 gs 9412 F011 F63TNR F852 FDS9412 L86Z SOIC-16 D1294 PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor
    Text: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior


    Original     		NDS9933A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor PDF

    1182

    Abstract: F011 F63TNR F852 L86Z NDS9955 SOIC-16 NDS9955 SO-8
    Text: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS9955 OT-23 1182 F011 F63TNR F852 L86Z NDS9955 SOIC-16 NDS9955 SO-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		Si4532DY PDF

    MOSFET 830 63 ng

    Abstract: nds9410a diode marking code RJ
    Text: NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		NDS9410A MOSFET 830 63 ng nds9410a diode marking code RJ PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS8433A FDS9953A L86Z
    Text: FDS8433A Single P-Channel 2.5V Specified MOSFET General Description Features This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize


    Original     		FDS8433A CBVK741B019 F011 F63TNR F852 FDS8433A FDS9953A L86Z PDF

    FDS8433A

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: FDS8433A Single P-Channel 2.5V Specified MOSFET General Description Features This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize


    Original     		FDS8433A FDS8433A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1998 FDS8936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		FDS8936A OT-23 PDF

    F011

    Abstract: F63TNR F852 FDS8936S L86Z SOIC-16
    Text: August 1997 FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		FDS8936S OT-23 F011 F63TNR F852 FDS8936S L86Z SOIC-16 PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 L86Z NDS8434
    Text: June 1996 NDS8434 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		NDS8434 CBVK741B019 F011 F63TNR F852 L86Z NDS8434 PDF

    CBVK741B019

    Abstract: F63TNR F852 NZT660 NZT660A PN2222A D84Z
    Text: NZT660/NZT660A July 1998 NZT660 / NZT660A C B C E SOT-223 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		NZT660/NZT660A NZT660 NZT660A OT-223 CBVK741B019 F63TNR F852 NZT660A PN2222A D84Z PDF

    F63TNR

    Abstract: F852 NZT560 NZT560A PN2222A CBVK741B019
    Text: NZT560/NZT560A July 1998 NZT560 / NZT560A C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		NZT560/NZT560A NZT560 NZT560A OT-223 F63TNR F852 NZT560A PN2222A CBVK741B019 PDF

    c 1246

    Abstract: fzt649 CBVK741B019 F63TNR F852 PN2222A On semiconductor date Code sot-223 transistor pn2222a 01246
    Text: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units


    Original     		FZT649 OT-223 c 1246 fzt649 CBVK741B019 F63TNR F852 PN2222A On semiconductor date Code sot-223 transistor pn2222a 01246 PDF

    F852 transistor

    Abstract: No abstract text available
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		FDT439N F852 transistor PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9412 FDS9953A L86Z
    Text: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		FDS9412 CBVK741B019 F011 F63TNR F852 FDS9412 FDS9953A L86Z PDF