DIN-46228 T3
Abstract: No abstract text available
Text: Insulated Ferrules Insulated Twin Ferrules Cat. No. F8000 F8001 F8002 F8003 F8005 F8006 F8007 F8008 F8009 F8010 F8011 Conductor Section AWG MM2 2x 20 2x 18 2x 18 2x 17 2x 17 2x 16 2x 16 2x 14 2x 14 2x 12 2x 10 2x 0.50 2x 0.75 2x 0.75 2x 1.00 2x 1.00 2x 1.50
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F8000
F8001
F8002
F8003
F8005
F8006
F8007
F8008
F8009
F8010
DIN-46228 T3
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brass properties
Abstract: F8007 MCM 2128 BU 2735 AS F2034 resistivity wire nichrome UL486E table 14.1 F4020 UL486E ACS 0865
Text: NEMA Terminal Blocks Technical Summary TERMINAL BLOCK OR PRODUCT LINE CONTACT TYPE MATERIAL PLATE SCREW STYLE High Density Tubular Clamp Electroplated Tubular Copper Contact 6-32 Slotted Head Screw 033” Wide x .040” Deep Steel Steel Electroplated .020”
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105-BU
UL486E
UL1059
brass properties
F8007
MCM 2128
BU 2735 AS
F2034
resistivity wire nichrome
UL486E table 14.1
F4020
ACS 0865
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DL161
Abstract: DL162 DL163
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xD
16-Bit)
Am29DL164D
Am29DL162D
DL161
DL162
DL163
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M410000002
Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
Text: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am41DL16x4D
M410000002
DL161
DL162
DL163
m410000009
AM29DL164DT
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DL161
Abstract: DL162 DL163 AM29DL164DT M4200
Text: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am42DL16x2D
FLA069--69-Ball
DL161
DL162
DL163
AM29DL164DT
M4200
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DS42546
Abstract: No abstract text available
Text: DS42546 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Top Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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DS42546
Am29DL163D
16-Bit)
69-Ball
DS42546
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164D48
Abstract: DL162 DL163 D163D
Text: Am29DL162D/163D/164D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DL162D/163D/164D
16-Bit)
Am29DL16xC
Am29DL16xD
164D48
DL162
DL163
D163D
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S29JL032
Abstract: DL161 DL162 DL163 S29JL032H S29PL032J S29PL-J D162DT90 D163DB70 D164DB70
Text: Am29DL16xD Data Sheet Retired Product Am29DL16xD Cover Sheet This product family has been retired and is not recommended for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL16xD and is the factoryrecommended migration path. Please refer to the S29JL032H data sheet for specifications and ordering information.
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Am29DL16xD
S29JL032H
S29PL032J
S29PL-J
21533E6
S29JL032
DL161
DL162
DL163
D162DT90
D163DB70
D164DB70
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IEC61754-20
Abstract: PBT 20 GF EN 1303 dust cap LC EN50173 61224 IEC-61754-20 052298
Text: www.geraetebau.telegaertner.com ca. 30 Fax: +49 35055/61224 13,2 15,6 Alle Rechte vorbehalten / all rights reserved Telegärtner Gerätebau GmbH D-01774 Höckendorf Frauenstrasse 1 Germany Phone: +49 35055/682-0 6,25 Verpackung Packing 1 Stück im PE-Beutel mit Montagehinweis
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D-01774
F80074A0001
IEC61754-20
PBT 20 GF
EN 1303
dust cap LC
EN50173
61224
IEC-61754-20
052298
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Untitled
Abstract: No abstract text available
Text: Am29DS163D Data Sheet Retired Product Am29DS163D Cover Sheet This product has been retired and is not recommended for designs. For new and current designs please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.
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Am29DS163D
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Untitled
Abstract: No abstract text available
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode • Simultaneous Read/Write operations
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Am29DL16xD
16-Bit)
VBF048
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giga Ethernet PHY RGMII
Abstract: 88E1111 GMII config giga pc MOTHERBOARD pcb diagram schematic S29GL256N11TFIV2 marvel phy 88e1111 reference design MPC8568 88E1111 PHY registers map 88E1111 S29GL256N11TFI020 usb to rj45 extenders
Text: MPC8568E MDS Processor Board User’s Guide Rev. 0.3 06/2007 MPC8568E MDS Processor Board, Rev. 0.3 Freescale Semiconductor Chapter 1 General Information 1.1 Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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MPC8568E
giga Ethernet PHY RGMII
88E1111 GMII config
giga pc MOTHERBOARD pcb diagram schematic
S29GL256N11TFIV2
marvel phy 88e1111 reference design
MPC8568
88E1111 PHY registers map
88E1111
S29GL256N11TFI020
usb to rj45 extenders
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88E1111-B2-BAB1C000
Abstract: 88E1111B2BAB1C000 88E1111-B2 -BAB-1I000 88E1111-B2 88E1111-B2-BAB 88E1111 Marvell PHY 88E1111 bsdl 88E1111 PHY registers map marvel phy 88e1111 reference design Marvell PHY 88E1111 Datasheet
Text: MPC8569E-MDS-PB HW User Guide June 2009 Rev. 1.0 MPC8569E-MDS-PB Moduled Development System Processor Board HW User Guide Version 1.0 Freescale Semiconductor Table of Contents General Information Table of Contents List of Figures v List of Tables vii Chapter 1
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MPC8569E-MDS-PB
88E1111-B2-BAB1C000
88E1111B2BAB1C000
88E1111-B2 -BAB-1I000
88E1111-B2
88E1111-B2-BAB
88E1111
Marvell PHY 88E1111 bsdl
88E1111 PHY registers map
marvel phy 88e1111 reference design
Marvell PHY 88E1111 Datasheet
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DL162C/Am29DL163C
16-Bit)
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DL161
Abstract: DL162 DL163 D163DB70
Text: Am29DL16xD Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29DL16xD
DL161
DL162
DL163
D163DB70
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QE R523
Abstract: diode QE r637 diode QE R615 QE r637 QE R611 qe r542 QE R549 Qe R532 QE R552 QE R644
Text: Freescale Semiconductor Hardware Getting Started Guide Document Number: MPC8569E-MDS-PB_HGS Rev. 3.1 MPC8569E-MDS-PB This document describes the MPC8569E-MDS-PB and its related hardware kit. The MPC8569E-MDS-PB getting started procedure explains and verifies the board’s basic
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MPC8569E-MDS-PB
MPC8569E-MDS-PB
QE R523
diode QE r637
diode QE R615
QE r637
QE R611
qe r542
QE R549
Qe R532
QE R552
QE R644
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LC-Connector
Abstract: No abstract text available
Text: www.geraetebau.telegaertner.com 13,15 Fax: +49 35055/61224 10,3 ca. 59 Alle Rechte vorbehalten / all rights reserved Telegärtner Gerätebau GmbH D-01774 Höckendorf Frauenstrasse 1 Germany Phone: +49 35055/682-0 6,25 Verpackung Packing 1 Satz im PE-Beutel mit Montagehinweis
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D-01774
F80073A0001
LC-Connector
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DL161
Abstract: DL162 DL163
Text: Am29DL16xD Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29DL16xD
VBF048
DL161
DL162
DL163
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Am29DL162CB
Abstract: No abstract text available
Text: PRELIMINARY Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DL162C/Am29DL163C
16-Bit)
Am29DL162CB
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D164DB70
Abstract: d162dt90
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode • Simultaneous Read/Write operations
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Am29DL16xD
16-Bit)
D164DB70
d162dt90
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am42DL16x2D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am42DL16x2D
Am29DL16xD
16-Bit)
69-Ball
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gsc840
Abstract: No abstract text available
Text: Index CATALOG NUMBER PAGE NUMBER 101A. . . . . . . . . . . . . . . . . . . . 74 101AG . . . . . . . . . . . . . . . . . . 74 101B. . . . . . . . . . . . . . . . . . . . 74 101BG . . . . . . . . . . . . . . . . . . 74 10RC-10. . . . . . . . . . . . . . . . . 11
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101AG
101BG
10RC-10.
10RC-10CP
10RC-10F.
10RC-10FCP
10RC-10FL
10RC-10FLX
10RC-10FX
10RC-10X
gsc840
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M410000002
Abstract: DL161 DL162 DL163 AM41DL1644DT
Text: PRELIMINARY Am41DL16x4D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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Am41DL16x4D
Am29DL16xD
16-Bit)
8-Bit/256
69-Ball
M410000002
DL161
DL162
DL163
AM41DL1644DT
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P03P
Abstract: No abstract text available
Text: PART NUMBER UNCONTROLLED DOCUMENT LD S-F8007R I-U SB CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D, HANDLING PROCEDURES WHEN WORKING WITH THIS PART. PIN 1 REV. 8,50 E0.335] 4,50 E0.177] PIN 18 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C PARAMETER PEAK WAVELENGTH
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OCR Scan
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LDS-F8007RI-USB
P03P
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