ic 94101
Abstract: innovative dro IRF7342D2
Text: PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -55V
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IRF7342D2
ic 94101
innovative dro
IRF7342D2
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F7101
Abstract: IRF7101 IRF7311 MS-012AA
Text: PD - 91435C IRF7311 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = 20V RDS on = 0.029Ω T o p V ie w Description Fifth Generation HEXFETs from International Rectifier
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91435C
IRF7311
F7101
IRF7101
IRF7311
MS-012AA
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IRF7476
Abstract: TH 2190 mosfet F7101 IRF7101 MS-012AA
Text: PD - 94311 IRF7476 HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance
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IRF7476
EIA-481
IA-541.
IRF7476
TH 2190 mosfet
F7101
IRF7101
MS-012AA
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IRF8113
Abstract: F7101 IRF7101
Text: PD - 94637 IRF8113 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage
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IRF8113
EIA-481
EIA-541.
IRF8113
F7101
IRF7101
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IRF 4310
Abstract: F7101 IRF7101 IRF7832
Text: PD - 94594A IRF7832 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 4.0m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS
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4594A
IRF7832
EIA-481
EIA-541.
IRF 4310
F7101
IRF7101
IRF7832
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IRF7317
Abstract: MS-012AA
Text: PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 N -C H A N N EL M O S FET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-Ch 20V -20V
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1568B
IRF7317
EIA-48
IA-541.
IRF7317
MS-012AA
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MS-012AA
Abstract: AN1001 EIA-541 F7101 IRF7101 IRF7491 IRF74
Text: PD - 94537 IRF7491 HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS RDS on max ID 80V 16mΩ@VGS = 10V 9.7A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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IRF7491
AN1001)
MS-012AA
AN1001
EIA-541
F7101
IRF7101
IRF7491
IRF74
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Untitled
Abstract: No abstract text available
Text: IRF7309PbF-1 VDS RDS on max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 P-CH -30 V V 0.05 0.10 Ω 25 25 nC 4.0 -3.0 A HEXFET Power MOSFET SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free
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IRF7309PbF-1
IRF7309TRPr
D-020D
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Untitled
Abstract: No abstract text available
Text: IRF7425PbF-1 HEXFET Power MOSFET VDS -20 RDS on max V 1 8 S 2 7 D S 3 6 D G 4 5 D 8.2 (@VGS = -4.5V) mΩ RDS(on) max 13 (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) 87 nC -15 A Package Type IRF7425PbF-1 SO-8 SO-8 Top View Features Industry-standard pinout SO-8 Package
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IRF7425PbF-1
IRF7425Pefer
D-020D
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Untitled
Abstract: No abstract text available
Text: IRF7416PbF-1 HEXFET Power MOSFET VDS -30 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V 0.020 Ω 61 nC -10 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
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IRF7416PbF-1
IRF7416TRPbF-1
TD-020D
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Untitled
Abstract: No abstract text available
Text: PD – 91746D IRF7805 HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented
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91746D
IRF7805
IRF7805
EIA-481
EIA-541.
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IRF7907PBF
Abstract: No abstract text available
Text: IRF7907PbF-1 HEXFET Power MOSFET VDS 30 RDS on m ax Q1 V 16.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 11.8 (@VGS = 10V) Qg (typical) Q1 6.7 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 9.1 ID(@TA = 25°C)Q2 11 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A Applications
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IRF7907PbF-1
IRF7907PBF
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IRF7478PBF
Abstract: 48V SMPS irf 1740 AN1001 EIA-541 F7101 IRF7101 smps 48v 12v
Text: PD- 95280 IRF7478PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free VDSS l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See
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IRF7478PbF
AN1001)
IRF7478PBF
48V SMPS
irf 1740
AN1001
EIA-541
F7101
IRF7101
smps 48v 12v
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irf7807pbf
Abstract: 10BQ040 EIA-541 F7101 IRF7101 IRF7807 IRF7807A hexfet pair
Text: PD – 95290 IRF7807PbF IRF7807APbF HEXFET Chip-Set for DC-DC Converters • • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description These new devices employ advanced HEXFET
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IRF7807PbF
IRF7807APbF
IRF7807
EIA-481
EIA-541.
irf7807pbf
10BQ040
EIA-541
F7101
IRF7101
IRF7807A
hexfet pair
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f7101
Abstract: MOSFET IRF7101 f-7101 MS-012AA
Text: SO-8 MS-012AA EXAMPLE: THIS IS AN F7101 (MOSFET) ñ ñ YWW ññ INTERNATIONAL RECTIFIER LOGO IOR xxxx O F7101 yyyy DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER
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MS-012AA)
IRF7101
F7101
f7101
MOSFET
IRF7101
f-7101
MS-012AA
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BQ2053
Abstract: No abstract text available
Text: BENCHMARQ Advance Information bq2053 Lithium ton Pack Supervisor Features General Description >- Protects two to four Lithium Ion series cells from overvoltage, undervoltage, and short circuit The bq2053 Lithium Ion Pack Supervisor is designed to control the
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bq2053
bq2053
137flfin
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Untitled
Abstract: No abstract text available
Text: PD - 9.1559A International IG R Rectifier IRF9956 PRELIMINARY HEXFET Power MOSFET • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated
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IRF9956
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IRF9952
Abstract: No abstract text available
Text: PD - 9.1561 A International IG R Rectifier IRF9952 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated N-CHANNEL M ÜSF ET
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IRF9952
IRF7309
IRF7509
IRF9952
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IRF7316
Abstract: tfr 586
Text: International lOR Rectifier PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V q ss = -30V Rds oh = 0.058Q Description Fifth Generation HEXFETs from international Rectifier
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IRF7316
EIA-S41.
IRF7316
tfr 586
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Smd code S08
Abstract: smd diode schottky code marking 2F
Text: International pd-9.i 4i 2C IwR Rectifier preliminary IR F 7 4 2 2 D 2 FETKY M OSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint a rrr-
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LT 33 diode surface mount
Abstract: No abstract text available
Text: PD - 9.1238C International IG R Rectifier IRF7301 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V dss = 2 0 V
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1238C
IRF7301
MS-012AA.
IRF7101
F7101
LT 33 diode surface mount
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1N MARKING
Abstract: No abstract text available
Text: International I O R Rectifier PD - 9.1435B IRF7311 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 JD I g 1n r 3T3D1 ss a t 3 D D2 G2 or a # 3 D D2 Vdss = 20 V Ros on = 0.029Î2
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1435B
IRF7311
1N MARKING
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Untitled
Abstract: No abstract text available
Text: International IGR Rectifier PD -9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Voss 30V — ^DS on = 0.029Q Description Fifth Generation HEXFETs from International Rectifier
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IRF7313
muttiple-diEiA-481
EIA-541.
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PDF
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Irf7314
Abstract: No abstract text available
Text: P D - 9.1436B International l R Rectifier IRF7314 PRELIMINARY HEXFET Power MOSFET Generation V T echnology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated V dss = ^D S o n = -20V 0.058Î2 Description Fifth Generation HEXFETs from International Rectifier
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1436B
IRF7314
Irf7314
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