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    KEMET Corporation ESS226M035AE2EA

    CAP ALUM 22UF 20% 35V RADIAL TH
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    DigiKey ESS226M035AE2EA Cut Tape 38,173 1
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    KEMET Corporation ESS107M016AE2EA

    CAP ALUM 100UF 20% 16V RADIAL TH
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    DigiKey ESS107M016AE2EA Cut Tape 37,647 1
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    ESS107M016AE2EA Ammo Pack 36,000 2,000
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    KEMET Corporation ESS106M063AE2EA

    CAP ALUM 10UF 20% 63V RADIAL TH
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    DigiKey ESS106M063AE2EA Cut Tape 15,389 1
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    KEMET Corporation ESS476M016AE2EA

    CAP ALUM 47UF 20% 16V RADIAL TH
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    DigiKey ESS476M016AE2EA Cut Tape 8,155 1
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    ESS476M016AE2EA Ammo Pack 6,000 2,000
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    Mouser Electronics ESS476M016AE2EA 11,386
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    KEMET Corporation ESS476M025AE2EA

    CAP ALUM 47UF 20% 25V RADIAL TH
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    DigiKey ESS476M025AE2EA Cut Tape 5,830 1
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    AE2E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SA70

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E_W Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84LD22382EF/LD22383EF/LD22384EF-12 MB84LD22392EF/LD22393EF/LD22394EF-12 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM


    Original
    MB84LD22382EF/LD22383EF/LD22384EF-12 MB84LD22392EF/LD22393EF/LD22394EF-12 71-ball F0006 SA70 PDF

    AE2E

    Abstract: MB81F12842-75
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E MEMORY CMOS 4 x 4 M × 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F12842-75/-102/-102L/-10/-10L CMOS 4-Bank × 4,194,304-Word × 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F12842 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    Original
    MB81F12842-75/-102/-102L/-10/-10L 304-Word MB81F12842 AE2E MB81F12842-75 PDF

    AE2E

    Abstract: MB81F12442-75
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E MEMORY CMOS 4 x 8 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F12442-75/-102/-102L/-10/-10L CMOS 4-Bank × 8,388,608-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F12442 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    Original
    MB81F12442-75/-102/-102L/-10/-10L 608-Word MB81F12442 AE2E MB81F12442-75 PDF

    SA3001

    Abstract: MB84VD2208XEA SA70
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2208XEA-90/MB84VD2209XEA-90 • FEATURES • Power supply voltage of 2.7 to 3.3V • High performance


    Original
    MB84VD2208XEA-90/MB84VD2209XEA-90 73-ball 00ing F9909 SA3001 MB84VD2208XEA SA70 PDF

    MBM29DL640E

    Abstract: MB84VD23380EF-90 F0006
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E_w Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD23380EF-90 • FEATURES • Power supply voltage of 2.7 to 3.0V for FCRAM • Power supply voltage of 2.7 to 3.3V for Flash


    Original
    MB84VD23380EF-90 101-ball F0006 MBM29DL640E MB84VD23380EF-90 F0006 PDF

    ADVANCED MICRO DEVICES

    Abstract: AE2E MB84LD23380EF-10
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E_w Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84LD23380EF-10 • FEATURES • Power supply voltage of 2.3 to 2.7V for FCRAM • Power supply voltage of 2.3 to 2.7V for Flash


    Original
    MB84LD23380EF-10 101-ball F0006 ADVANCED MICRO DEVICES AE2E MB84LD23380EF-10 PDF

    SA70

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E_w Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22382EF/VD22383EF/VD22384EF-90 MB84VD22392EF/VD22393EF/VD22394EF-90 • FEATURES • Power supply voltage of 2.7 to 3.0V for FCRAM


    Original
    MB84VD22382EF/VD22383EF/VD22384EF-90 MB84VD22392EF/VD22393EF/VD22394EF-90 71-ball F0006 SA70 PDF

    AE2E

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E MEMORY CMOS 4 x 2 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F121642-75/-102/-102L/-10/-10L CMOS 4-Bank × 2,097,152-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F121642 is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    Original
    MB81F121642-75/-102/-102L/-10/-10L 152-Word MB81F121642 16-bit AE2E PDF

    SA70

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XA-10/MB84VD2219XA-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance


    Original
    MB84VD2218XA-10/MB84VD2219XA-10 100ns 77-ball F9903 SA70 PDF

    Untitled

    Abstract: No abstract text available
    Text: PGA400-Q1 www.ti.com SLDS186 – MARCH 2012 PRESSURE SENSOR SIGNAL CONDITIONER Check for Samples: PGA400-Q1 1 DEVICE OVERVIEW 1.1 FEATURES 1 • Analog Features – Analog Front-End for Resistive Bridge Sensors – Self-Oscillating Demodulator for Capacitive Sensors


    Original
    PGA400-Q1 SLDS186 16-Bit, 10-Bit PDF

    Si443x

    Abstract: AN463 B084 B20F BL51 C8051F930 V605 4432-T-B1 B 915 4432-T-B1 C 915 8bd4
    Text: AN463 R A W D ATA M ODE WITH E Z R ADIO PRO 1. Introduction This application note describes raw data mode configuration for the Si443x which allows for the reception of any packet structure without the need to follow the recommended packet structure in the data sheet. A typical


    Original
    AN463 Si443x AN463 B084 B20F BL51 C8051F930 V605 4432-T-B1 B 915 4432-T-B1 C 915 8bd4 PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM MB84VD2218XA-10/MB84VD2219XA-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance


    OCR Scan
    8/x16) MB84VD2218XA-10/MB84VD2219XA-10 100ns 77-ball F9903 PDF

    F643242B

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E MEMORY CMOS 4x512 Kx 32 BIT SYNCHRONOUS DYNAMIC RAM MB81F643242B -70/-80/-10/-70L/-80L/-1OL CMOS 4-Bank x 524,288-Word x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing


    OCR Scan
    4x512 MB81F643242B -70/-80/-10/-70L/-80L/-1OL 288-Word 32-bit F643242B; F9904 F643242B PDF