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    EY TRANSISTOR Search Results

    EY TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    EY TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transformer inrush

    Abstract: EYRC500F511
    Text: Product data sheet 94.108 EY-RC 500: Room automation station, ecos500 How energy efficiency is improved Powerful function modules in the ecos500 allow energy-optimised room control and the control of lights and blinds, and guarantee minimum energy consumption


    Original     		PDF ecos500 ecos500 EY-RC500F001 RS-485 AXS215SF122 A10682a EY-RC50 EY-RC500F511, EY-RC500F521 EY-RC500F002 transformer inrush EYRC500F511

    Untitled

    Abstract: No abstract text available
    Text: Product data sheet 94.185 EY-RC 208, 209: Room automation stations, ecos208, 209 How energy efficiency is improved Powerful function modules in the ecos allow energy-optimised room control and the control of lights and blinds and guarantee minimum energy consumption


    Original     		PDF ecos208, EY-RC209F001 A10733 ecos209) CH-4016

    HCC4529B

    Abstract: HCC4529BF HCF4529B HCF4529BC1 HCF4529BEY HCF4529BM1
    Text: HCC4529B HCF4529B DUAL 4-CHANNEL OR SINGLE 8-CHANNEL ANALOG DATA SELECTOR . . . DATA PATHS ARE BIDIRECTIONAL 10 MHz OPERATION typical 3-STATE OUTPUTS ”ON” RESISTANCE 125 W TYPICAL @ 15V SUPPLY VOLTAGE RANGE = 3Vdc TO 18Vdc EY (Plastic Package) F (Ceramic Package)


    Original     		PDF HCC4529B HCF4529B 18Vdc HCC4529BF HCF4529BM1 HCF4529BEY HCF4529BC1 16lead HCC4529B HCC4529BF HCF4529B HCF4529BC1 HCF4529BEY HCF4529BM1

    A 4606

    Abstract: transistor 718 4606 transistor sockets 4609
    Text: TO-3 POWER TRANSISTOR SOCKETS k ey elc o.co m SOCKETS FOR TO-3 CASE VARIOUS MOLDED BOSS HEIGHTS The socket is held underneath the chassis and the semiconductor is inserted into the contacts of the socket holding the assembly in position. To complete the mounting, use 6-20 screws to engage the


    Original     		PDF

    EY transistor

    Abstract: G3VM-601BY G3VM-601EY transistor ey G3VM Relay UL relay omron 5 pin omron 5v 6 pin relay 601by
    Text: MOS FET Relay G3VM-601BY/EY MOS FET Relay for Switching Analog Signals, with an I/O Dielectric Strength of 5 kVAC Using Optical Isolation • Switches minute analog signals. ■ Switches AC and DC. ■ Load voltage: 600 V. ■ I/O dielectric strength: 5 kVAC.


    Original     		PDF G3VM-601BY/EY G3VM-601BY G3VM-601EY G3VM-601EY EY transistor G3VM-601BY transistor ey G3VM Relay UL relay omron 5 pin omron 5v 6 pin relay 601by

    gc900

    Abstract: No abstract text available
    Text: GC9001 – GC9011 PASSIVE DEVICES – Spiral Bias Elements TM RoHS Compliant K EY FEAT U RES The GC9000 series of spiral bias element chips are photolithographically fabricated planar spiral conductors supported on a high quality fused quartz substrate. These devices are designed to meet hybrid microwave circuit


    Original     		PDF GC9001 GC9011 GC9000 gc900

    AXS215SF122

    Abstract: No abstract text available
    Text: Product data sheet 94.200 EYE 200: DDC single-room controller, ecos200 How energy efficiency is improved Individual unitary control, fan coil units, chilled-beam control system, etc. Features • Part of the SAUTER EY-modulo 2 system family • Individual unitary control, fan coil units, chilled-beam control system, etc.


    Original     		PDF ecos200 EYE200F001, EYE200F002 EYE200F901, EYE200F902 CH-4016 AXS215SF122

    Untitled

    Abstract: No abstract text available
    Text: MOS FET Relays G3VM-601BY/EY Analog-switching MOS FET Relays with a Dielectric Strength of 5 kVAC between I/O Using Optical Isolation. • Switches minute analog signals. • Switching AC and DC. • Peak load voltage of 600 V. • Dielectric strength of 5 kVAC between I/O.


    Original     		PDF G3VM-601BY/EY G3VM-601BY G3VM-601EY

    BLS2731-10

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Microwave Transistors General conditions. A characteristic may also be a set of related values, usually shown in graphical form. PRO ELECTRON TYPE NUMBERING FOR BLS-TYPES Basic type number Bo g ey This type designation code applies to discrete


    OCR Scan     		PDF

    transistor ey

    Abstract: smd transistor EY SG3081 Sense Diode Array cd
    Text: D evice T ype CD CD -j Un OJ NO D evice T ype D evice T ype CD CD -j Un CO NO en CD CD Ln Ui OJ ro D escriptio n s* o« CD CD Cn U ”i GO ro Cn D escriptio n D escriptio n is I” Ià s o SË 3 o p «£ » 7 3 5 o O ^ m S S K ey F e a t u r e s K ey F e a t u r e s


    OCR Scan     		PDF SG5774 SG6509 100nA transistor ey smd transistor EY SG3081 Sense Diode Array cd

    Untitled

    Abstract: No abstract text available
    Text: STANLEY ELECTRIC CO LT]> S5E ]> • 4b?fllSfi 0G0E027 SflT « I i s r ^BT w ey . 7W /-6 3 PHOTODARLINGTON TRANSISTOR PD401 ■ FEATURES • • Package Dimensions HIGH DIRECTIVITY MOLDED EPOXY TYPE ■ APPLICATION • • • OPTIC FIBER OPTICAL SWITCH PHOTOSENSOR


    OCR Scan     		PDF 0G0E027 PD401 T-41-63

    ITE15F12

    Abstract: No abstract text available
    Text: 5Ü GEC PLESS EY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4315-1.2 ITE15F12/ITE15C12 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE15X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for


    OCR Scan     		PDF DS4315-1 ITE15F12/ITE15C12 ITE15X12 Each11 002bi 37bfi522 ITE15F12

    Untitled

    Abstract: No abstract text available
    Text: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT690 ISSUE 1 - NOVEMBER 1995 Ci L L —I—I Bi c ,n = =□ c? I r Z D b2 I I Ey Cîl I Ei PAFtTMARKING DETAIL- T690 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V V C BO 45


    OCR Scan     		PDF ZDT690 DGQTS07 D0CH50Ã

    transistor IRF520

    Abstract: IRF520 mos die 312c IRF52
    Text: 3QE D 7 T 2 C 237 0D30130 5 • Q S-THOMSON SGS-THOMSON IRF520 CHIP Ey N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 9 5 x9 5 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:


    OCR Scan     		PDF 0D30130 IRF520 95x95 28x30 16x18 651CHARACTERISTICS transistor IRF520 mos die 312c IRF52

    Untitled

    Abstract: No abstract text available
    Text: S i GEC PLESS EY ADVANCE INFORMATION S E M I C O N D U C T O R S SL3245 3GHz NPN TRANSISTOR ARRAY The SL3245 is a monolithic array of live high frequency low current NPN transistors. The SL3245 consists of 3 isolated transistors and a differential pair in a 14 lead SO package. The


    OCR Scan     		PDF SL3245 SL3245 SL3045 SL3145. 37bfl522 0021GT3 60MHz

    SP8601

    Abstract: SP8601A
    Text: A PSLemEicon SS EY du ctors i SP8601A & B 150MHz + 4 The SP8601 is an asynchronous ECL counter with a current steered output which can be used to drive TTL or CMOS. Biased externally, it may be directly driven from an ECL !J source. Vcc 0V> I CLOCK INPUT


    OCR Scan     		PDF SP8601A 150MHz SP8601 125aC /77T7 SP8601A

    half adder ttl

    Abstract: MA914 MA92 non inverting buffer 8 volts via apollo vp GEC Marconi GEC Plessey m SHR8
    Text: GEC PL ESS EY S I M I , O \ I I, I. T O MAMMA Sea of Gates Radiation Hard Advanced Gate Array Design System K -> S21600FDS Issue 1.2 Novem ber 1990 Features • Channelless array architecture • Typical gate delay 1 OnS - toggle rates of 100MHz achievable


    OCR Scan     		PDF MA9000A S21600FDS 100MHz 25uW/MHz half adder ttl MA914 MA92 non inverting buffer 8 volts via apollo vp GEC Marconi GEC Plessey m SHR8

    Untitled

    Abstract: No abstract text available
    Text: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible


    OCR Scan     		PDF HM3500R, HVM10000R to172 148-Pin 244-Pin M2010, M2023 M1008,

    Untitled

    Abstract: No abstract text available
    Text: 3DE D a» • 7cîBc]237 00311b7 ü ■ ^p37' 5 SCS-THOM SON iUHETTBOHOeS 2N3250 2N3251 S G S-THOMSON AMPLIFIERS AND SWITCHES DESC RIPTIO N - T h e 2 N 3 2 5 0 and 2N 32 51 are silicon planar epitaxial P N P transistors in Jedec T O -1 8 m etal case. T h ey


    OCR Scan     		PDF 00311b7 2N3250 2N3251

    transistor B 892

    Abstract: ir transmitter receiver transistor 892 ir remote decoder IC S852T H 928G 3741B IC for IR receiver 48C892
    Text: Tem ic S e m i c o n d u c t o r s Dedicated ICs and Transistors for Keyless Entry/ Remote Control Fun ctio n Package K ey Featu res ! IR Transmitter / Receiver B P V 23N F PIN diode IR p h o to detcctor, 875 to 9 5 0 nm, sensitivity typical 65 jtA Side v iew


    OCR Scan     		PDF 092/M transistor B 892 ir transmitter receiver transistor 892 ir remote decoder IC S852T H 928G 3741B IC for IR receiver 48C892

    Untitled

    Abstract: No abstract text available
    Text: K EY SPECIFICA TIONS AND DEFINITIONS Narda DROs operate in the 3 to 18 GHz frequency range and typically use bipolar and FET active devices, de­ pending on the requirement. These units are designed for MIL-E-5400 and MIL-E-16400 environments. Perti­ nent specifications are discussed below.


    OCR Scan     		PDF MIL-E-5400 MIL-E-16400

    SL6444

    Abstract: No abstract text available
    Text: Si 37bflS25 0D2GCIG5 MEL « P L S B GEC P L ES S EY SEMI CONDUCTORS NOVEMBER 1993 DS3224 2.3 SL6444 1GHz AMPLIFIER / MIXER The SL6444 Amplifier and Mixer is designed for use in Cordless Telephones, Cellular Radios, Pagers and Low Power receivers operating at frequencies up to 1GHz. It contains a


    OCR Scan     		PDF 37bflS25 DS3224 SL6444 SL6444

    Untitled

    Abstract: No abstract text available
    Text: APLE SS EY W S em ico n d u cto rs. ZN450 SINGLE CHIP 3% DIGIT DVM 1C The 2N450 is a complete digital voltmeter fabricated on a monolithic chip and requires only ten external, passive components for operation. A novel charge-balancing conversion technique ensures good linearity. The auto-zero


    OCR Scan     		PDF ZN450 2N450

    OV56

    Abstract: sp5051
    Text: P LE SS EY SEMICONDUCTORS 1SE D • 7220513 # PLESSEY Sem iconductors 0 0C HSS 1 ■ ■■ . . . — S ■ n T-SO-o°i SP5052 2.3GHz SINGLE CHIP FREQUENCY SYNTHESISER The SP5052, used w ith a voltage controlled oscillator form s a com plete phase locked loop capable of synthesising


    OCR Scan     		PDF SP5052 SP5052, 95GHz 75GHz 480MHz. 000TSS4 SP5052 OV56 sp5051