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    EUDYNA DEVICES X BAND POWER AMPLIFIERS Search Results

    EUDYNA DEVICES X BAND POWER AMPLIFIERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    EUDYNA DEVICES X BAND POWER AMPLIFIERS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FLM2527L-20F

    Abstract: Eudyna Devices power amplifiers Eudyna Devices X BAND power amplifiers
    Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package


    Original     		PDF FLM2527L-20F FLM2527L-20F Volt4888 Eudyna Devices power amplifiers Eudyna Devices X BAND power amplifiers

    Eudyna Devices X BAND power amplifiers

    Abstract: FSX017LG Eudyna Devices
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. U4888 Eudyna Devices X BAND power amplifiers Eudyna Devices

    Eudyna Devices X BAND power amplifiers

    Abstract: FLM2527L-20F
    Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package


    Original     		PDF FLM2527L-20F FLM2527L-20F Volt4888 Eudyna Devices X BAND power amplifiers

    FSX017L

    Abstract: S12MAG Eudyna Devices X BAND power amplifiers
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. FSX017L S12MAG Eudyna Devices X BAND power amplifiers

    FSX017LG

    Abstract: FSX017
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. Uni73 FSX017

    Traveling Wave Amplifier

    Abstract: 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing
    Text: DC to 85GHz TWA and Ka-band 4.9W Power Amplifier Using an Optical Lithography Based Low Cost PHEMT Process Kohei Fujii, John Stanback, and Henrik Morkner White Paper Abstract Overview of The Mmic Process An optical photo lithography based 0.15 m GaAs PHEMT


    Original     		PDF 85GHz 575mA/mm, 753mW/mm 18GHz. 12dBm AV02-1684EN Traveling Wave Amplifier 95GH Dielectric Constant Silicon Nitride MMIC POWER AMPLIFIER hemt APMC2001 FMM5820X HMC-AUH312 TGA4803 TGA4906 InGaAs hemt biasing