ascom
Abstract: kearfott SUPERMAC Pratt Whitney alps labeling Raytheon MCT daikin Dolphin honeywell Ericsson Marconi carl zeiss
Text: Systems in Silicon 3_bU\Yc9^S 8@<_WYS1^Q\ijUbCe``_bd 3_bU\Yc9^S !"& '8YTTU^SbUU[GQi 3UbbYd_c 31 ' # %&")"& &'"'cQ\Uc0S_bU\Yc S_] ggg S_bU\Yc S_] 1 Company Overview • Privately held • Founded 1991
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MSM66207
Abstract: msm66201 msm66207 eta trw m 66207 MSM66201 SDIP64-P-750-1 OLMS-66K
Text: E2E1027-27-Y4 This version: Jan. 1998 MSM66201/66P201/66207/66P207 Previous version: Nov. 1996 ¡ Semiconductor MSM66201/66P201/66207/ 66P207 ¡ Semiconductor OLMS-66K Series 16-Bit Microcontroller GENERAL DESCRIPTION The MSM66201/66207 is a high performance microcontroller that employs OKI original nX-8/
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E2E1027-27-Y4
MSM66201/66P201/66207/66P207
MSM66201/66P201/66207/
66P207
OLMS-66K
16-Bit
MSM66201/66207
16-bit
10-bit
MSM66207
msm66201 msm66207
eta trw
m 66207
MSM66201
SDIP64-P-750-1
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MSM66201
Abstract: MSM66207 MSM66P201 MSM66P207 QFP64 SDIP64 m 66207
Text: J2E1027-27-Y3 ¡ 電子デバイス 作成：1998年 1月 前回作成：1996年11月 MSM66201/66P201/66207/66P207 l MSM66201/66P201/66207/66P207 10ビットA/Dコンバータ内蔵16ビットマイクロコントローラ n 概要 MSM66201/66207は沖オリジナルのCPUコアnX-8/200を使用した、高性能16ビットマイクロコン
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J2E1027-27-Y3
MSM66201/66P201/66207/66P207
MSM66201/66P201/66207/66P207
0A/D16
MSM66201/66207CPUnX-8/20016
16CPUROMRAMI/O1610A/D
MSM66P201/66P207MSM66201/66207PROM
MSM66201
MSM66207
MSM66201
MSM66207
MSM66P201
MSM66P207
QFP64
SDIP64
m 66207
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tms 3848 nc
Abstract: MSM66101 MSM66G101VS QFP64 SDIP64 12k8
Text: J2E1026-27-Y4 ¡ 電子デバイス 作成：1998年 1月 MSM66101 l 前回作成：1996年11月 MSM66101 10ビットA/Dコンバータ内蔵16ビットマイクロコントローラ n 概要 MSM66101は沖オリジナルのCPUコアnX-8/100を使用した、高性能16ビットマイクロコントロー
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J2E1026-27-Y4
MSM66101
MSM66101
0A/D16
MSM66101CPUnX-8/10016
16CPUROMRAMI/O1610A/D
400nsec
10MHz)
12PWM
tms 3848 nc
MSM66G101VS
QFP64
SDIP64
12k8
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TMS 3848
Abstract: tms 3848 nc MSM66101 MSM66G101VS QFP64 SDIP64 0026I 004AI rw 816 ai-259
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2E1026-27-Y4
MSM66101
MSM66101
0A/D16
MSM66101CPUnX-8/10016
16CPUROMRAMI/O1610A/D
400nsec
10MHz)
12PWM
TMS 3848
tms 3848 nc
MSM66G101VS
QFP64
SDIP64
0026I
004AI
rw 816
ai-259
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66207
Abstract: MSM66207 P2211 MSM66201 MSM66P201 MSM66P207 QFP64 SDIP64 m 66207 ai-259
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2E1027-27-Y3
MSM66201/66P201/66207/66P207
MSM66201/66P201/66207/66P207
0A/D16
MSM66201/66207CPUnX-8/20016
16CPUROMRAMI/O1610A/D
MSM66P201/66P207MSM66201/66207PROM
MSM66201
MSM66207
66207
MSM66207
P2211
MSM66201
MSM66P201
MSM66P207
QFP64
SDIP64
m 66207
ai-259
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MSM66101
Abstract: MSM66G101VS QFJ68-P-S950-1 QFP64-P-1414-0 SDIP64-P-750-1 QFP5-28
Text: E2E1026-27-Y4 ¡ Semiconductor MSM66101 ¡ Semiconductor This version: MSM66101 Jan. 1998 Previous version: Nov. 1996 OLMS-66K Series 16-Bit Microcontroller GENERAL DESCRIPTION The MSM66101 is a high performance microcontroller that employs OKI original nX-8/100 CPU
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E2E1026-27-Y4
MSM66101
OLMS-66K
16-Bit
MSM66101
nX-8/100
10bit
MSM66G101VS
QFJ68-P-S950-1
QFP64-P-1414-0
SDIP64-P-750-1
QFP5-28
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364V120CJ/CT KMM364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Performance Range: The S am sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The KMM364V120C - 6 K M M 364V120C - 7
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KMM364V120CJ/CT
1Mx64
KMM364V120CJ/CT
364V120C
48pin
168-pin
KMM364V120C
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Untitled
Abstract: No abstract text available
Text: KMM372C412AK/A S DRAM MODULE KMM372C412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372C412A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C412A - 5
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KMM372C412AK/A
KMM372C412AK/AS
4Mx72
372C412A
KMM372C412A
300mil
110ns
130ns
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MOTOROLA 13003
Abstract: F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW3000 Series The RF Line M icrowave Power Transistors . . . designed prim arily for large-signal output and driver amplifier stages in the 1.5 to 3 GHz frequency range. 5 TO 7 dB 1.5-3 GHz 1 TO 5 WATTS MICROWAVE POWER
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MRW3000
TRW3000
MOTOROLA 13003
F 13003
TU F 13003
f13003
F 13005
d 13003 t
3003F
3001F
3005F
RS 3005 CL
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KMM372V213A
Abstract: No abstract text available
Text: DRAM MODULE KMM372V213AJ/AT KMM372V213AJ/AT Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KMM372V213A is a 2M bit x 72 D ynam ic RAM high density m em ory module. The Sam sung KM M 372V213A consists of nine CMOS
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KMM372V213AJ/AT
2Mx72
KMM372V213A
372V213A
400mil
48pin
168-pin
KMM372V213AJ/AT
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EZ 720
Abstract: No abstract text available
Text: KMM374F203BK KMM374F213BK DRAM MODULE KMM374F203BK & KMM374F213BK EDO Mode without buffer 2Mx72 DRAM DIMM with ECC based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Sam sung KM M 374F20 1 3B is a 2M bit x 72 • Part Identification Dynam ic RAM high density m em ory module. The
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KMM374F203BK
KMM374F213BK
KMM374F203BK
KMM374F213BK
2Mx72
374F20
168-p
KMM374F20
168-pin
EZ 720
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364V120CJ/CT KMM364V120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364V120C is a 1M bit x 64 D ynam ic RAM high density m em ory module. The Samsung KM M 364V120C consists of sixteen CMOS
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KMM364V120CJ/CT
KMM364V120CJ/CT
1Mx64
364V120C
KMM364V120C
110ns
130ns
48pin
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KMM372V213
Abstract: KMM372V213BS
Text: KMM372V213BK/BS DRAM MODULE KMM372V213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Part Identification - KMM372V213BK 2048 cycles/32ms, SOJ - KMM372V213BS (2048 cycles/32ms, TSOP) The Sam sung KMM 372V213B is a 2M bit x 72
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KMM372V213
KMM372V213BK/BS
2Mx72
KMM372V213B
300mil
48pln
168-pin
KMM372V21
110ns
KMM372V213BS
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Ez102
Abstract: 4103AJ
Text: KMM372V412AK/AS DRAM MODULE KMM372V412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KMM372V412A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C412A - 6
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KMM372V412AK/AS
KMM372V412AK/AS
4Mx72
KMM372V412A
300mil
400mil
48pin
168-pin
M372V412A
Ez102
4103AJ
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TDC11012
Abstract: TRW 1020 TDC1012 THC1070 THC1070E1C THC4940 8609-264-6114-7550E1 Coaxial RJ 57 TRW RESISTOR
Text: THC1070 f # 7 ìv Complete High-Speed A/D Converter 10-Bit, 25 Msps The TRW THC1070 is a complete analog-to-digital converter that combines all the circuitry required to convert high-speed analog signals into 10-bit digital data at rates up to 25 Msps Megasamples per second . The THC1070
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THC1070
10-Bit,
THC1070
10-bit
32-pin
TDC11012
TRW 1020
TDC1012
THC1070E1C
THC4940
8609-264-6114-7550E1
Coaxial RJ 57
TRW RESISTOR
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Untitled
Abstract: No abstract text available
Text: KMM364C400BK/BS KMM364C41 OB K/BS DRAM MODULE KMM364C400BK/BS / KMM364C41OBK/BS Fast Page Mode 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 5V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM364C40 1 0B is a 4M bit x 64 Dynamic RAM high density memory module. The
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KMM364C400BK/BS
KMM364C41
KMM364C41OBK/BS
4Mx64
KMM364C40
300mil
48pin
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM372V400BK/BS KMM372V41OBK/BS DRAM MODULE KMM372V400BK/BS / KMM372V41 OBK/BS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM372V40 1 0B is a 4M bit x 72 Dynam ic RAM high density m em ory module. The
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KMM372V400BK/BS
KMM372V41OBK/BS
KMM372V400BK/BS
KMM372V41
4Mx72
KMM372V40
KMM372V400BK
cycles/64ms
KMM372V400BS
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Samsung Capacitor sse
Abstract: No abstract text available
Text: DRAM MODULE KMM372V120CJ/CT KMM372V120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 372V120C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The S am su ng
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KMM372V120CJ/CT
1Mx72
KMM372V120CJ/CT
372V120C
48pin
168-pin
KMM372V120C
20nsthat
Samsung Capacitor sse
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KM44V16104AK
Abstract: 0023D14 REF-601
Text: KMM374F1680AK KMM374F1600AK DRAM MODULE KMM374F1680AK & KMM374F1600AK EDO Mode w ith ou t buffer 16Mx72 DRAM DIMM with ECC based on 16Mx4, 8K & 4K Refresh, 3.3V G E N E R A L D E S C R IP T IO N FEATURES The Samsung KMM374F168 0 0AK is a 16M bit x 72 >Part Identification
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KMM374F1680AK
KMM374F1600AK
KMM374F1600AK
16Mx72
16Mx4,
KMM374F168
16Mx4bit
400mil
KM44V16104AK
0023D14
REF-601
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2u11
Abstract: No abstract text available
Text: O K I Semiconductor MSM66101 OLMS-66K Series 16-Bit Microcontroller GENERAL DESCRIPTION The MSM66101 is a high performance microcontroller that employs OKI original n X -8/100 CPU core. This chip includes a 16-bit CPU, ROM, RAM, I /O ports, multifunction 16-bit timers, 10-bit A /
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MSM66101
OLMS-66K
16-Bit
MSM66101
10-bit
400ns
10MHz
2u11
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Untitled
Abstract: No abstract text available
Text: QL8x12 pASIC 1 FAMILY Very-High-Speed IK 3K Gate CMOS FPGA pASIC HIGHLIGHTS Very High Speed - ViaLink metal-to-metal programmable-via antifuse technology, allows counter speeds over 100 MHz, and logic cell delays of under 4 ns. High Usable Density - An 8-by-12 array of 96 logic cells provides
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QL8x12
8-by-12
68-pin
100-pin
16-bit
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ic 81256 ram
Abstract: mb81256 3GJK 66010-2
Text: February 1990 Edition 2.0 FUJITSU DATASHEET M B 8 1 2 5 6 -8 0 MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY 262,144 Bit Dynamic Random Access Memory The Fujitsu MB81256 is a fully decoded, dynamic NMOS random access memory organized as 262,144 one-bit words. The design is optimized for high speed,
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MB81256
16-pin
D1987
MB81256-80
LCC-18P-MM)
C18019S-1C
ic 81256 ram
3GJK
66010-2
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TDC1012
Abstract: TDC1048 MARKING lsi logic 10-TURN FHC1068 THC1068 THC1068E1C THC1068S7V1 irf 5110 B24DA
Text: FHC1068 7 #7 r V Complete High-Speed A/D Converter 8-Bit, 25Msps Designed to be user-friendly, th e T H C 1068 is a com plete flash ana lo g -to -d ig ita l conve rter th a t com bines all circuitry required to convert high-speed analog signals into 8 -b it
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FHC1068
25Msps
THC1068
TDC1048
TDC1012
MARKING lsi logic
10-TURN
FHC1068
THC1068E1C
THC1068S7V1
irf 5110
B24DA
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