KA5Q0765RT
Abstract: ka5q0765 resh KA5Q0765* an
Text: KA5Q0765RT S P S S P S TO -22 0F -5L The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under
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KA5Q0765RT
KA5Q0765RT
ka5q0765
resh
KA5Q0765* an
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BQ25050
Abstract: BQ25060
Text: User's Guide SLUU438 – July 2010 bq25050/bq25060EVM This user's guide describes the features and operation of the bq25050/bq25060EVM Evaluation Module EVM . This EVM assists users in evaluating the bq25050 and bq25060 linear battery chargers. The manual includes the bq25050/bq25060EVM bill of materials, board layout, and schematic.
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SLUU438
bq25050/bq25060EVM
bq25050
bq25060
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Untitled
Abstract: No abstract text available
Text: User's Guide SLUU463 – November 2010 bq24170EVM Stand-Alone Synchronous, Switch-Mode, Battery-Charge Controller With Integrated N-MOSFETs and Power Path Selector This user's guide describes the features and operation of the bq24170EVM Evaluation Module EVM . The
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SLUU463
bq24170EVM
bq24170
HPA610A.
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IHLP2020CZER3R3
Abstract: No abstract text available
Text: User's Guide SLUU476 – December 2010 bq24133EVM Stand-Alone Synchronous, Switch-Mode, Battery-Charge Controller With Integrated N-MOSFETs and Power Path Selector This user's guide describes the features and operation of the bq24133EVM Evaluation Module EVM . The
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SLUU476
bq24133EVM
bq24133
HPA715A.
IHLP2020CZER3R3
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wj da11 pin
Abstract: 22TCW
Text: •HYUNDAI H Y 5 1 1 6 1 6 0 B S e r ie s 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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16-bit
HY5116160B
16-bit.
1AD53-10-MAY95
HY5116160BJC
HY5116160BSLJC
HY5116160BTC
wj da11 pin
22TCW
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varo semiconductor
Abstract: MT4C4001 MT4C4001J MT4C4001JDJ-6 MT4C4001JS mtc4001 MT4000
Text: MT4C4001J S 1 MEG X 4 DRAM MICRON ft stiacoNOucTOH«c- 1 MEG x 4 DRAM DRAM STANDARD OR SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J S) • Industry-standard pinout, timing, functions and
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MT4C4001
024-cycle
MT4C4001J)
128ms
MT4C4001J
225mW
UT4C4001J
CI994.
varo semiconductor
MT4C4001JDJ-6
MT4C4001JS
mtc4001
MT4000
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PD72120
Abstract: WW76H DA16-DA23 MPD72120 UPD72120
Text: NEC NEC Electronics Inc. Description Th e ^ P D 7212 0 A dvanced G raph ics Display C on troller A G D C displays ch aracters an d g rap hics on a raster scan device from co m m an ds and param eters received from a ho st processor or CPU. Features of th e A G D C
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uPD72120
16-bit
32-blt
PD72120
WW76H
DA16-DA23
MPD72120
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IC Pin 7476
Abstract: XDM32
Text: PRELIMINARY MICRON MT8LD264 X 2 M EG x 64 DRAM M ODULE 1 DRAM MODULE 2 MEG x 64 16 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JE D E C - and industry-standard pinout in a 168-pin, dual-in-line m em ory m odule (D IM M )
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MT8LD264
168-pin,
600mW
048-cycle
LD264
IC Pin 7476
XDM32
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HY5116164B
Abstract: HY5116164BJC wx19
Text: »HYUNDAI HY5116164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116164B
16-bit
16-bit.
1AOS7-10-MAY95
HY5116164BJC
HY5116164BSLJC
wx19
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upd72120
Abstract: up down counter using IC 7476 PD72120 UPD72120R hj 4094 MPD72120 B7094 b7050
Text: NEC NEC Electronics Inc. Description The jiPD72120 Advanced Graphics Display Controller AG DC displays characters and graphics on a raster scan device from commands and parameters received from a host processor or CPU. Features of the AG DC include high-speed graphics drawing capabilities, video
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uPD72120
16-bit
32-bit
up down counter using IC 7476
PD72120
UPD72120R
hj 4094
MPD72120
B7094
b7050
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT4C16256/7/8/9 S 256K X 16 WIDE DRAM I^ IIC Z R O N WIDE DRAM 256K x 16 DRAM FEATURES • SE L F REFRESH , or "S lee p M o d e " • In d ustry -stan dard x l6 pin ou ts, tim ing, functions an d p a ck a g e s • H igh -perform an ce C M O S silicon-gate process
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MT4C16256/7/8/9
500mW
512-cycle
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ic DAD 1000
Abstract: UPD72120 PD72120 dwa 108 a DAD 1000 AD0-AD15 AD12 AD14 ESH B 001 12 CV 7476
Text: NEC NEC Electronics Inc. Description The fiPD72120 Advanced Graphics Display Controller AG DC displays characters and graphics on a raster scan device from commands and parameters received from a host processor or CPU. Features of the AG DC include high-speed graphics drawing capabilities, video
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uPD72120
16-bit
32-bit
ic DAD 1000
PD72120
dwa 108 a
DAD 1000
AD0-AD15
AD12
AD14
ESH B 001 12
CV 7476
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Untitled
Abstract: No abstract text available
Text: ti/ca /Electronics 7400 Series Surface Mount Technology SMT Dual In-Line Package (DIP) Switch , .100 Centerline A p p lica tio n S p e cification 114-1120 23 MAR 00 Rev B All numerical values are in metric units [with U.S. customary units in brackets]. Dimensions are in millimeters [and
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recoma 18
Abstract: MH25708J-10 MH25708J-85 MH25708JA-10 MH25708JA-12 MH25708JA-85
Text: M IT S U B IS H I LS Is MH25708J-85,-10,-12,-15/ MH25708JA-85,-10,-12,-15 N IB B LE M ODE 2 6 2 1 4 4 -W O R D B Y 8 -B IT D YN A M IC RAM DESCRIPTION The M H 25 708 J, JA is 2 6 2 1 4 4 word x 8 bit dynam ic R A M and consists of nine industry standard 2 5 6 K x 1 dynamic
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MH25708J-85
MH25708JA-85
262144-WORD
MH25708J,
MH25708JA
MH25708J
MH25708J-85,
MH25708JA-85,
recoma 18
MH25708J-10
MH25708JA-10
MH25708JA-12
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3055t
Abstract: diode zd 22
Text: APT20M45SVFR • R ADVANCED W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT20M45SVFR
APT20M45SVFR
3055t
diode zd 22
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 16 Megabit CMOS DRAM D P D 1M X 16 M 2 H 3 M ICROSYSTEM S PRELIMINARY D E S C R IP T IO N : The D PD 1M X1 6M 2H3 "S T A C K ” module is a re vo lu tio n ary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCO stacked and leaded for surface
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DPD1MX16M2H3
16-Megabits
40-PIN
30A108-14
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t41l
Abstract: LC256 41LC256K32D4
Text: ADVANCE MT41 LC256K32D4 S 256K x 32 SGRAM p iC Z R O iS J 256K x 32 SGRAM SYNCHRONOUS GRAPHICS RAM PULSED RAS, DUAL BANK, PIPELINED, 3.3V OPERATION FEATURES • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; colum n address can be
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LC256K32D4
024-cycle
LC2S6K32D4(
t41l
LC256
41LC256K32D4
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ESH B 001 12
Abstract: No abstract text available
Text: MOTOROLA S EM IC O N D U C T O R TECHNICAL DATA MCM40100 MCM40L100 1M x 40 Bit Dynamic Random A ccess Memory Module for Error Correction Applications T h e M C M 4 0 1 0 0 S and M C M 4 0 L 1 0 0 S a re 40 M , d y n a m ic rand o m a c c e s s m em ory D R A M m o d u les o rg a n ize d a s 1 ,0 4 8 ,5 7 6 x 4 0 bits. T h e m od ule is a 72 -le ad
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40100S70
40100S80
40100S10
40L100S70
40L100S80
40L100S10
40L100
100ns)
40100SG70
40100SG80
ESH B 001 12
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Untitled
Abstract: No abstract text available
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM54280B MCM5L4280B MCM5V4280B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54280B is a 0.6|i CMOS high-speed dynamic random access memory. It is organized as 262,144 eighteen-bit words and fabricated with CMOS silicon-gate
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MCM54280B
54280BT70R
54280BT80R
54280BT10R
5L4280BJ70
5L4280BJ80
5L4280BJ10
5L4280BT70
5L4280BT80
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12034398
Abstract: delphi bolt 12034235 15492542 Delphi 12047680
Text: 16 14 15 13 12 10 11 8 SYMBOL D EF IN IT IO N A D I M E N S I O N WITHOUT AN I N S P E C T I O N REPORT S YMBO L DOES NOT REQUIRE INSPECTION. I T MAY BE CONTR OL LE D ON AN I N D I V I D U A L COMPONENT DRAWING. M TOTAL NO. OF SYMBOLS ON DRAW ING LAST NO.
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08DE00
14JN04
12034398
delphi bolt 12034235
15492542
Delphi 12047680
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH25708J-85,-10,-12,-i5/ MH25708JA-85,-10,-12,-IS N IB B LE MODE 2 6 2 1 4 4 -W O R D B Y 8 -B IT DYNAMIC RAM DESCRIPTION The M H 25708J, J A is 2 6 21 4 4 word x 8 bit dynam ic RAM PIN CONFIGURATION TOP VIEW and consists of nine industry standard 2 5 6 K x 1 dynam ic
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MH25708J-85
MH25708JA-85
25708J,
MSM42S7
MH25708J-85,
MH25708JA-85,
62144-W
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MB8101
Abstract: MB81C1001-10 RBS 2106 equivalent RBS 2107
Text: February 1990 Edition 3.0 FUJITSU DATA SHEET MB81C1001-70/-80/-10/-12 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001 is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001 has been designed for mainframe
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MB81C1001-70/-80/-10/-12
MB81C1001
C26064S-1C
MB81C1001-70
MB81C1001-80
MB81C1001-10
MB81C1001-12
20-LEAD
MB8101
RBS 2106 equivalent
RBS 2107
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Untitled
Abstract: No abstract text available
Text: ADVANCE M • ir S D N MT4 LD T 164 B(N ), MT8LD264 B(N ), MT16LD464 B(N ) 1 ,2 ,4 M EG X 64 B U R S T EDO DRAM M O D U LES BURST EDO DRAM MODULE 1, 2, 4 MEG X 64 8, 16, 32 MEGABYTE, 3.3V, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line memory module (D IM M )
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MT8LD264
MT16LD464
168-Pin
168-pin,
024-cycle
column-00
0D1310Ã
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LTP-4057A
Abstract: 4057A 4057AG
Text: A SERIES %SS& A ! AA 4157 4357 n u a n 'l% ,m COLOR & MULTICOLOR DISPLAYS FEATURES 4 0 INCH 101 6 m m M A T R IX H E R ,N T LO W P O W E R R E Q U IR E M E N T i H IG H C O N T R A S T i HIGH B R IG H T N E S S >S IN G L E P L A N E , W ID E V IE W IN G A N t .l I
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