ESAB82M-004

Abstract: ccd120 WA3T
Contextual Info: ESAB82M-004 5 a è±/J'i *^ ì - k 5sa% y H r — ' * l) 7 ÿ 4 ‘ Outline D raw ings K SCHOTTKY BARRIER DIODE 4 .5 MAX. 2.0 o -o U z : Features JEDEC SC-67 EIAJ Insulated package by fully m o ld in g . • 1&VF • Low VF fcT-K C onnection Diagram Super high speed sw itching.

Contextual Info: ESAB82M004 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)103# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)2.0

ESAB82-004

Contextual Info: ESAB82-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram

ESAB82-004

Contextual Info: ESAB82-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram

Schottky Diode 40V 5A

Abstract: ESAB82M-004
Contextual Info: ESAB82M-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0 ±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC Insulated package by fully molding Low VF EIAJ Super high speed switching

ESAB82M-006

Contextual Info: ESAB82M -006 5A SCHOTTKY BARRIER DIODE Features Insulated package by fully m o ld in g , • teV p Low Vi. Connection Diagram • 7 ,' iv T ' s V * Super high speed sw itchin g. • 7 V —t - High reliability by planer design. ! Applications High speed pow er sw itchin g.

esab82-004

Contextual Info: ESAB82-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram

B82-004

Abstract: B82004 DIODE B82 B82 004 B82 diode
Contextual Info: ESAB82-004 5A '> 3 SCHOTTKY BARRIER DIODE • ¡ t i# : Features • teVF Low V F • * .f " /T > 9 Super high speed sw itchin g. • 7 V —t Connection Diagram - H igh reliability by planer design. ■ ffliis : Applications High speed pow er sw itchin g.

Contextual Info: ESAB82M006 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)103 V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.60 V(FM) Max.(V) Forward Voltage580m @I(FM) (A) (Test Condition)2.0

Contextual Info: ESAB82-0054 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

al360

Abstract: AL 360 ESAB82M-006
Contextual Info: ESAB82M-006 5A ' >3 ,y | ' +— K : O u tlin e D ra w in g s SCHOTTKY BARRIER DIO DE F e a tu r e s Insulated package by fully m o ld in g , • ifeVp Low Vi. iflVC C o n n e c tio n D ia g ra m Super high speed sw itch in g . • 7 V —J— High reliability by planer design.

ESAB82M-006

Contextual Info: ESAB82M -006 5A SCHOTTKY BARRIER DIODE Features Insulated package by fully m o ld in g , • teV p Low Vi. Connection Diagram • 7 ,' iv T ' s V * Super high speed sw itchin g. • 7 V —t - High reliability by planer design. ! Applications High speed pow er sw itchin g.

esab82-004

Abstract: fuji 004
Contextual Info: http://www.fujisemi.com ESAB82-004R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Ratings Units Repetitive peak surge reverse voltage VRSM 48 V Repetitive peak reverse voltage

schottky diode 60V 5A

Abstract: ESAB82M-006 5A60V ESAB82M006
Contextual Info: ESAB82M-006 5A (60V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0 ±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC Insulated package by fully molding Low VF EIAJ Super high speed switching

Contextual Info: ESAB82M-004 5A '> a"A ^ r—' t y J ’ ÿ ' i ' t — K SCHOTTKY BARRIER DIODE : Features Insulated package by fully m o ld in g . m n m & tin C onnection Diagram Low V F Su p er high speed switching. r > High reliability by planer design, i : A pplications

ESAB82-004

Abstract: esab82
Contextual Info: ESAB82-004I5A '>3 'y b f— 'O J T f* -i 5t —K SCHOTTKY BARRIER DIODE Features • ftV F Low V F Super high speed sw itchin g. « « « » & • 7 V —t - Connection Diagram H igh reliability by planer design. : Applications High speed pow er sw itch in g .

CC4020

Abstract: 10N3 jpaa A392 ESAB82-004 T930 X810
Contextual Info: ESAB82-004 5A '* x) 7 9 ' - Í jr —V SCHOTTKY BARRIER DIODE : Features • fl*VF Low VF mUHC Connection Diagram Super high speed switching. High reliability by planer design. : Applications High speed power switching. Maximum Ratings and Characteristics

ESAB82-004

Abstract: c1020 5A schottky
Contextual Info: ESAB82-004I5A '>3 'y b f— 'O J T f* - i 5t —K SCHOTTKY BARRIER DIODE Features • ftV F Low V F Super high speed sw itchin g. « « « » & • 7 V —t - Connection Diagram H igh reliability by planer design. : Applications High speed pow er sw itch in g .

Contextual Info: ESAB82-004 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)2.5

Contextual Info: ESAB82-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

SE024

Abstract: ERB12 ESAD81-004 se014 ERA1506 ERB30 ESAB82M-006 esac6 ERD03-04 SE036
Contextual Info: COLLMER SEMICONDUCTOR INC MÖE D me, dddisôi Schottky/General Purpose Diodes " P ICOL <S o \ ~ \ J > Schottky “Quick Reference” Selection Guide PACKAGE SURFACE MOUNT S I N G L E AXIAL TO-220 TO-3P F-PACK Full Mold Package PACKAGE SURFACE MOUNT D U A

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay