Untitled
Abstract: No abstract text available
Text: ESAB82M004 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)103# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)2.0
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ESAB82M004
Voltage40
Voltage550m
StyleTO-220var
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ESAB82-004
Abstract: No abstract text available
Text: ESAB82-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram
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ESAB82-004
O-220AB
SC-46
500ns,
ESAB82-004
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ESAB82-004
Abstract: No abstract text available
Text: ESAB82-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram
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ESAB82-004
O-220AB
SC-46
500ns,
ESAB82-004
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Schottky Diode 40V 5A
Abstract: ESAB82M-004
Text: ESAB82M-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0 ±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC Insulated package by fully molding Low VF EIAJ Super high speed switching
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ESAB82M-004
SC-67
500ns,
Schottky Diode 40V 5A
ESAB82M-004
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esab82-004
Abstract: No abstract text available
Text: ESAB82-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram
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ESAB82-004
O-220AB
SC-46
500ns,
esab82-004
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Untitled
Abstract: No abstract text available
Text: ESAB82M006 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)103 V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.60 V(FM) Max.(V) Forward Voltage580m @I(FM) (A) (Test Condition)2.0
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ESAB82M006
Voltage60
Voltage580m
StyleSOT-186var
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Untitled
Abstract: No abstract text available
Text: ESAB82-0054 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)
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ESAB82-0054
Voltage45
StyleTO-220AB
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esab82-004
Abstract: fuji 004
Text: http://www.fujisemi.com ESAB82-004R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Ratings Units Repetitive peak surge reverse voltage VRSM 48 V Repetitive peak reverse voltage
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ESAB82-004R
500ns,
esab82-004
fuji 004
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schottky diode 60V 5A
Abstract: ESAB82M-006 5A60V ESAB82M006
Text: ESAB82M-006 5A (60V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0 ±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC Insulated package by fully molding Low VF EIAJ Super high speed switching
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ESAB82M-006
SC-67
500ns,
schottky diode 60V 5A
ESAB82M-006
5A60V
ESAB82M006
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ESAB82-004
Abstract: No abstract text available
Text: ESAB82-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram
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ESAB82-004
O-220AB
SC-46
500ns,
ESAB82-004
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Untitled
Abstract: No abstract text available
Text: ESAB82-004 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)2.5
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ESAB82-004
Voltage45
Voltage550m
StyleTO-220
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Untitled
Abstract: No abstract text available
Text: ESAB82-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10+0.5 4.5±0.2 3.7±0.2 15±0.2 6.4±0.2 2.7±0.1 Ø3.6±0.2 14 -0.5 1.2 0.4 0.8 2.7 2.54 5.08 Features Low VF JEDEC TO-220AB EIAJ SC-46 Super high speed switching Connection diagram
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ESAB82-004
O-220AB
SC-46
500ns,
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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MUR1560 equivalent
Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in
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MBRD835L
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MUR1560 equivalent
1N4004 SMA
S1A SOD 88
S1A MARKING CODE SOD 88
1N5189
ss33 sma
Diode marking us1j
diode 6a10
6TQ035
usd745c equivalent
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ESAB82M-004
Abstract: ccd120 WA3T
Text: ESAB82M-004 5 a è±/J'i *^ ì - k 5sa% y H r — ' * l) 7 ÿ 4 ‘ Outline D raw ings K SCHOTTKY BARRIER DIODE 4 .5 MAX. 2.0 o -o U z : Features JEDEC SC-67 EIAJ Insulated package by fully m o ld in g . • 1&VF • Low VF fcT-K C onnection Diagram Super high speed sw itching.
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ESAB82M-004
SC-67
500ns
ccd120
WA3T
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ESAB82M-006
Abstract: No abstract text available
Text: ESAB82M -006 5A SCHOTTKY BARRIER DIODE Features Insulated package by fully m o ld in g , • teV p Low Vi. Connection Diagram • 7 ,' iv T ' s V * Super high speed sw itchin g. • 7 V —t - High reliability by planer design. ! Applications High speed pow er sw itchin g.
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ESAB82M-006
SC-67
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B82-004
Abstract: B82004 DIODE B82 B82 004 B82 diode
Text: ESAB82-004 5A '> 3 SCHOTTKY BARRIER DIODE • ¡ t i# : Features • teVF Low V F • * .f " /T > 9 Super high speed sw itchin g. • 7 V —t Connection Diagram - H igh reliability by planer design. ■ ffliis : Applications High speed pow er sw itchin g.
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ESAB82-004
500ns
B82-004
B82004
DIODE B82
B82 004
B82 diode
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al360
Abstract: AL 360 ESAB82M-006
Text: ESAB82M-006 5A ' >3 ,y | ' +— K : O u tlin e D ra w in g s SCHOTTKY BARRIER DIO DE F e a tu r e s Insulated package by fully m o ld in g , • ifeVp Low Vi. iflVC C o n n e c tio n D ia g ra m Super high speed sw itch in g . • 7 V —J— High reliability by planer design.
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ESAB82M-006
SC-67
al360
AL 360
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ESAB82M-006
Abstract: No abstract text available
Text: ESAB82M -006 5A SCHOTTKY BARRIER DIODE Features Insulated package by fully m o ld in g , • teV p Low Vi. Connection Diagram • 7 ,' iv T ' s V * Super high speed sw itchin g. • 7 V —t - High reliability by planer design. ! Applications High speed pow er sw itchin g.
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OCR Scan
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ESAB82M-006
SC-67
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Untitled
Abstract: No abstract text available
Text: ESAB82M-004 5A '> a"A ^ r—' t y J ’ ÿ ' i ' t — K SCHOTTKY BARRIER DIODE : Features Insulated package by fully m o ld in g . m n m & tin C onnection Diagram Low V F Su p er high speed switching. r > High reliability by planer design, i : A pplications
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ESAB82M-004
500ns
l95t/R89
Shl50
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ESAB82-004
Abstract: esab82
Text: ESAB82-004I5A '>3 'y b f— 'O J T f* -i 5t —K SCHOTTKY BARRIER DIODE Features • ftV F Low V F Super high speed sw itchin g. « « « » & • 7 V —t - Connection Diagram H igh reliability by planer design. : Applications High speed pow er sw itch in g .
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ESAB82-004
O-220AB
SC-46
500ns
esab82
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CC4020
Abstract: 10N3 jpaa A392 ESAB82-004 T930 X810
Text: ESAB82-004 5A '* x) 7 9 ' - Í jr —V SCHOTTKY BARRIER DIODE : Features • fl*VF Low VF mUHC Connection Diagram Super high speed switching. High reliability by planer design. : Applications High speed power switching. Maximum Ratings and Characteristics
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ESAB82-004I5A)
O-220AB
SC-46
500ns
19S24
l95t/R89
CC4020
10N3
jpaa
A392
ESAB82-004
T930
X810
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ESAB82-004
Abstract: c1020 5A schottky
Text: ESAB82-004I5A '>3 'y b f— 'O J T f* - i 5t —K SCHOTTKY BARRIER DIODE Features • ftV F Low V F Super high speed sw itchin g. « « « » & • 7 V —t - Connection Diagram H igh reliability by planer design. : Applications High speed pow er sw itch in g .
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ESAB82-004
O-220AB
SC-46
500ns
c1020
5A schottky
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SE024
Abstract: ERB12 ESAD81-004 se014 ERA1506 ERB30 ESAB82M-006 esac6 ERD03-04 SE036
Text: COLLMER SEMICONDUCTOR INC MÖE D me, dddisôi Schottky/General Purpose Diodes " P ICOL <S o \ ~ \ J > Schottky “Quick Reference” Selection Guide PACKAGE SURFACE MOUNT S I N G L E AXIAL TO-220 TO-3P F-PACK Full Mold Package PACKAGE SURFACE MOUNT D U A
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SE014
SE036
SE059
SC802-04
SC802-06
SC802-09
ERA82-004
ERA83-006
ERA85-009
ERA83-004
SE024
ERB12
ESAD81-004
ERA1506
ERB30
ESAB82M-006
esac6
ERD03-04
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