EQUIVALENT TRANSISTOR TO 2SK Search Results

EQUIVALENT TRANSISTOR TO 2SK Result Highlights (5)

Part	Manufacturer	Description
TMP89FS60BFG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003
TMP89FS60BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003
TMP89FM82DUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D

EQUIVALENT TRANSISTOR TO 2SK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA1955 Abstract: 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA Text: TO SH IBA TENTATIVE HN7G01FU TOSHIBA MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 i 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent	OCR Scan	HN7G01FU N7G01FU 2SA1955 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TENTATIVE HN7G01 FU TO SHIBA M U LTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER M A N A G E M E N T SWITCH APPLICATION 2.1 i 0,1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATIO N Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent	OCR Scan	HN7G01 2SA1955 2SK1830 HN7G01FU	PDF
2SK1825 Abstract: No abstract text available Text: TO SH IBA 2SK1825 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE 2S K1 825 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT	OCR Scan	2SK1825 2SK1825	PDF
IFN147 Abstract: No abstract text available Text: E6 9-97 IFN147 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C • LOW NOISE AUDIO AMPLIFIER • Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 10 mA	OCR Scan	IFN147 2SK147 NJ450 00Q0BG4 IFN147	PDF
2SK1826 Abstract: No abstract text available Text: TO SHIBA 2SK1826 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 826 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT	OCR Scan	2SK1826 961001EAA2 2SK1826	PDF
K1825 Abstract: No abstract text available Text: TOSHIBA 2SK1825 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE 2S K1 825 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT	OCR Scan	2SK1825 000707EAA1 K1825	PDF
2SK1825 Abstract: No abstract text available Text: TO SHIBA 2SK1825 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 825 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT	OCR Scan	2SK1825 961001EAA2 2SK1825	PDF
2sk112 Abstract: No abstract text available Text: 9-97 E4 IFN112 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE, HIGH GAIN • Equivalent to Japanese 2SK112 Absolute maximum ratings at TA= 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 50 V Continuous Forward Gate Current 10 mA	OCR Scan	IFN112 2SK112 NJ132H 2sk112	PDF
FC18 Abstract: 2SC4639 2SK2394 Marking 18 marking PS FET Text: Ordering number:EN4983 FC18 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp, AM Amp, Low-Frequency Amp Applications Features Package Dimensions • Composed of 2 chips, one being equivalent to the 2SK2394 and the other the 2SC4639, in the	Original	EN4983 2SK2394 2SC4639, FC18 2SC4639 Marking 18 marking PS FET	PDF
2SC4639 Abstract: FC18 FC18F 2SK2394 ITR10364 FET MARKING DB64 Text: Ordering number:ENN4983 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET FC18 High-Frequency Amp, AM Amp, Low-Frequency Amp Applications Package Dimensions • Composed of 2 chips, one being equivalent to the 2SK2394 and the other the 2SC4639, in the	Original	ENN4983 2SK2394 2SC4639, 2SC4639 FC18 FC18F ITR10364 FET MARKING DB64	PDF
2SK147 Abstract: 2SK147 equivalent IFN147 Text: E6 8-94 IF N 1 4 7 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C • LOW NOISE AUDIO AMPLIFIER • Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Continuous Forward Gate Current	OCR Scan	2SK147 IFN147 NJ450 T0-18 2SK147 2SK147 equivalent IFN147	PDF
2SK146 Abstract: IFN146 Text: E5 9 -9 7 IFN 146 DUAL N -CH AN N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • LOW NOISE AUDIO AMPLIFIER ♦ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current	OCR Scan	2SK146 IFN146 NJ450 2SK146 IFN146	PDF
2SK146 Abstract: 2sk146 datasheet 2sk146 equivalent equivalent transistor TO 2sk146 IFN146 Text: Databook.fxp 1/13/99 2:09 PM Page D-5 D-5 01/99 IFN146 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage	Original	IFN146 2SK146 NJ450 2SK146 2sk146 datasheet 2sk146 equivalent equivalent transistor TO 2sk146 IFN146	PDF
2SK147 equivalent Abstract: 2SK147 IFN147 Text: Databook.fxp 1/13/99 2:09 PM Page D-6 D-6 01/99 IFN147 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage	Original	IFN147 2SK147 NJ450 2SK147 equivalent 2SK147 IFN147	PDF

2sk146 Abstract: ifn146 TO71 package 2sk146 equivalent Text: E5 8-94 IF N 146 D U A L N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR LOW NOISE AUDIO AMPLIFIER Absolute maximum ratings at TA = 25"C Equivalent to Japanese 2SK146 Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Continuous Forward Gate Current	OCR Scan	2SK146 IFN146 2sk146 TO71 package 2sk146 equivalent	PDF
smd transistor marking 12W Abstract: smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor Text: 8. P r e c a u t io n s in H a n d l i n g s urfa c e m o u n t d e v ic e s S M D types of surface m ount transistors, as described below: (1) Super Mini Transistor (TO-236 equivalent) The Super Mini Transistor’s envelope is com parable to those of the TO-236 and SOT-23	OCR Scan	O-126 O-220 O-236 OT-23 O-220SM O-22QSM T0-220SM smd transistor marking 12W smd transistor 12W 3 pins SMD transistor Marking 13w transistor SMD 12W TRANSISTOR SMD 13W smd transistor 12W 98 transistor te 2305 smd transistor LY smd transistor 12W 12W smd transistor	PDF
2SK112 Abstract: pa 0016 equivalent equivalent transistor c 495 ifn112 NJ132H Text: E4 9 -9 7 IF N 1 1 2 N -C H A N N E L SILICO N JU N CTIO N FIELD-EFFECT TRANSISTOR LOW NOISE, HIGH GAIN Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation	OCR Scan	IFN112 2SK112 IFN112 NJ132H 100nA pa 0016 equivalent equivalent transistor c 495 NJ132H	PDF
Power MOSFET, toshiba Abstract: 2SK1830 HN7G05FU RN2301 Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent	Original	HN7G05FU RN2301 2SK1830 Power MOSFET, toshiba HN7G05FU Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA	PDF
2SK146 Abstract: 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor Text: Databook.fxp 1/14/99 2:03 PM Page D-2 D-2 01/99 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors Japanese InterFET Process 2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 NJ16 NJ16 NJ16 NJ16 NJ132 Parameters Conditions	Original	2SK17 2SK40 2SK59 2SK105 2SK113 IFN17 IFN40 IFN59 IFN105 IFN113 2SK146 2SK147 equivalent 2sk146 equivalent transistor sdg 2SK105 2sk146 datasheet 2SK105 Datasheet 2SK147 2sk152 equivalent Japanese Transistor	PDF
2SK1830 Abstract: HN7G05FU RN2301 Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent	Original	HN7G05FU RN2301 2SK1830 HN7G05FU	PDF
2SA1955 Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)	Original	HN7G01FU 2SA1955 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET	PDF
HN7G01FU Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)	Original	HN7G01FU 2SA1955 2SK1830 HN7G01FU Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA	PDF
2SK1830 Abstract: HN7G05FU RN2301 Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent	Original	HN7G05FU RN2301 2SK1830 HN7G05FU	PDF
2SK1830 Abstract: HN7G02FU RN2110 Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent	Original	HN7G02FU RN2110 2SK1830 HN7G02FU	PDF

EQUIVALENT TRANSISTOR TO 2SK Search Results

EQUIVALENT TRANSISTOR TO 2SK Result Highlights (5)

EQUIVALENT TRANSISTOR TO 2SK Datasheets Context Search

2SA1955

Untitled

2SK1825

IFN147

2SK1826

K1825

2SK1825

2sk112

FC18

2SC4639

2SK147

2SK146

2SK146

2SK147 equivalent

2sk146

smd transistor marking 12W

2SK112

Power MOSFET, toshiba

2SK146

2SK1830

2SA1955

HN7G01FU

2SK1830

2SK1830