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    Toshiba America Electronic Components 2SA1955FVBTPL3Z

    TRANS PNP 12V 0.4A VESM
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    DigiKey 2SA1955FVBTPL3Z Cut Tape 2,695 1
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    2SA1955FVBTPL3Z Digi-Reel 1
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    Toshiba America Electronic Components 2SA1955FVATPL3Z

    TRANS PNP 12V 0.4A CST3
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    DigiKey 2SA1955FVATPL3Z Cut Tape 2,376 1
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    Bristol Electronics 2SA1955FVATPL3Z 7,920
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    Quest Components 2SA1955FVATPL3Z 6,336
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    Toshiba America Electronic Components 2SA1955FV-A(TPL3)

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    Quest Components 2SA1955FV-A(TPL3) 775
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    Toshiba America Electronic Components 2SA1955FV-A(TPL3,Z)

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    Quest Components 2SA1955FV-A(TPL3,Z) 7,573
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    2SA1955 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SA1955 Toshiba General Purpose Transistors (Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; Comments: High current; Part Number: 2SC5376; DC Current Gain hFE, min: (min 300) (max 1000); DC Current Gain hFE, max: (max -0.03); Collector-Emitter Saturation Voltage V_CE(sat), max (V): (max -12) Original PDF
    2SA1955 Unknown PNP transistor Scan PDF
    2SA1955 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1955 Toshiba TRANSISTOR (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS) Scan PDF
    2SA1955A Toshiba Silicon PNP Epitaxial Transistor Scan PDF
    2SA1955B Toshiba Silicon PNP Epitaxial Transistor Scan PDF
    2SA1955F Toshiba Transistor for Low-Frequency Small-Signal Amplification Original PDF
    2SA1955FV Toshiba Transistor for Low-Frequency Small-Signal Amplification Original PDF
    2SA1955FVATPL3Z Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP VESM Original PDF
    2SA1955FVBTPL3Z Toshiba Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP VESM Original PDF

    2SA1955 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sat 1205

    Abstract: 2SA1955FV
    Text: 2SA1955FV シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1955FV ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 0.22±0.05 項 目 記 号 定 格 2 単位 コ レ ク タ ･ ベ ー ス 間 電 圧


    Original     		PDF 2SA1955FV sat 1205 2SA1955FV

    2SA1955F

    Abstract: No abstract text available
    Text: 2SA1955F シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1955F ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) (1) = −15 mV (標準)


    Original     		PDF 2SA1955F 2SA1955F

    2SA1955

    Abstract: No abstract text available
    Text: 2SA1955 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA •


    Original     		PDF 2SA1955 2SA1955

    2SA1955

    Abstract: HN7G01FE SSM3K03FE
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE HN7G01FE

    2SA1955F

    Abstract: No abstract text available
    Text: 2SA1955F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955F General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA


    Original     		PDF 2SA1955F 2SA1955F

    Untitled

    Abstract: No abstract text available
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830

    2SA1955

    Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET

    2SA1955

    Abstract: HN7G03FU SSM3K04FU
    Text: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G03FU 2SA1955 SSM3K04FU HN7G03FU

    2SA1955

    Abstract: HN7G01FE SSM3K03FE
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE HN7G01FE

    2SA1955

    Abstract: 2SK1830 HN7G01FU 2SK1830 MOSFET
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU 2SK1830 MOSFET

    HN7G01FU

    Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FU 2SA1955 2SK1830 HN7G01FU Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA

    2SA1955FV

    Abstract: No abstract text available
    Text: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 1 2 3 Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage


    Original     		PDF 2SA1955FV 2SA1955FV

    Untitled

    Abstract: No abstract text available
    Text: 2SA1955F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955F General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA


    Original     		PDF 2SA1955F

    Untitled

    Abstract: No abstract text available
    Text: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 Large collector current: IC = −400 mA (max) 0.32±0.05 0.8±0.05 0.4 • 1.2±0.05 @IC = −10 mA/IB = −0.5 mA


    Original     		PDF 2SA1955FV 15esented

    2SA1955

    Abstract: No abstract text available
    Text: 2SA1955 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA ·


    Original     		PDF 2SA1955 2SA1955

    Untitled

    Abstract: No abstract text available
    Text: 2SA1955F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955F General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA


    Original     		PDF 2SA1955F

    Untitled

    Abstract: No abstract text available
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE

    2SA1955

    Abstract: HN7G03FU SSM3K04FU
    Text: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G03FU 2SA1955 SSM3K04FU HN7G03FU

    2SA1955

    Abstract: HN7G03FU SSM3K04FU
    Text: HN7G03FU 東芝複合デバイス HN7G03FU ○ パワーコントロールスイッチ用 ○ ドライバー回路用 ○ インターフェイス回路用 z Q1（トランジスタ） z Q2（S-MOS 単位: mm : 2SA1955 相当 : SSM3K04FU 相当 Q1 絶対最大定格 Ta = 25°C)


    Original     		PDF HN7G03FU 2SA1955 SSM3K04FU 2SA1955 HN7G03FU SSM3K04FU

    2SA1955

    Abstract: No abstract text available
    Text: 2SA1955 TO SH IBA 2 S A 1 955 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION 1.6 ± 0.2 ,0.8 ± 0 .1, r— : —1 • Low Saturation Voltage : VCE (sat) (1) = - l5mV (TyP-)


    OCR Scan     		PDF 2SA1955 --400mA 2SA1955

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1955 TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 955 G EN ERA L PURPOSE A M PLIFIER APPLICATIO NS Unit in mm SW ITCH IN G A N D M U T IN G SW ITCH A PPLICATIO N 1 .6 1 0 .2 0.8 ± 0 .1, • Low Saturation Voltage • Large Collector Current


    OCR Scan     		PDF 2SA1955 --15mV --10mA/ --400mA OL44IUSYMBOL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN7G01 FU TO SHIBA M U LTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER M A N A G E M E N T SWITCH APPLICATION 2.1 i 0,1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATIO N Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent


    OCR Scan     		PDF HN7G01 2SA1955 2SK1830 HN7G01FU

    2SA1955

    Abstract: 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA
    Text: TO SH IBA TENTATIVE HN7G01FU TOSHIBA MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 i 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent


    OCR Scan     		PDF HN7G01FU N7G01FU 2SA1955 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA

    2SA1955

    Abstract: 2SK1830 HN7G01FU
    Text: HN7G01FU TOSHIBA TOSHIBA TENTATIVE MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 ± 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent


    OCR Scan     		PDF HN7G01FU N7G01FU 2SA1955 2SK1830 HN7G01FU