EPA480BV
Abstract: IGD 75a 12v EPA480B
Text: Excelics EPA480B/EPA480BV PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET 960 • • • • • • • +35.5dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN FOR EPA480B AND 12.0dB FOR EPA480BV AT 12GHz 0.4X 4800 MICRON RECESSED “MUSHROOM” GATE
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EPA480B/EPA480BV
EPA480B
EPA480BV
12GHz
120mA
20micons
EPA480B
EPA480BV
IGD 75a 12v
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IGD 75a 12v
Abstract: EPA480B EPA480BV
Text: EPA480B/EPA480BV High Efficiency Heterojunction Power FET UPDATED: 09/27/2007 • • • • • • • +35.5dBm TYPICAL OUTPUT POWER 7.5dB TYPICAL POWER GAIN FOR EPA480B AND 9.0dB FOR EPA480BV AT 12GHz 0.3X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA480B/EPA480BV
EPA480B
EPA480BV
12GHz
120mA
EPA480B
EPA480BV
EPA480BV.
IGD 75a 12v
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EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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EFA480B
Abstract: EFA480BV EPA480BV
Text: EFA480B/EFA480BV Low Distortion GaAs Power FET FEATURES • • • • • • • 960 156 50 +34.0dBm TYPICAL OUTPUT POWER 6.0dB TYPICAL POWER GAIN FOR EFA480B AND 7.5dB FOR EFA480BV AT 12GHz 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EFA480B/EFA480BV
EFA480B
EFA480BV
12GHz
EPA480BV
EFA480BV)
EFA480B
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EFA480B
Abstract: EFA480BV EPA480BV gm 90 156 369
Text: Excelics EFA480B/EFA480BV PRELIMINARY DATA SHEET Low Distortion GaAs Power FET 960 • • • • • • • +34.0dBm TYPICAL OUTPUT POWER 6.0dB TYPICAL POWER GAIN FOR EFA480B AND 7.5dB FOR EFA480BV AT 12GHz 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE
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EFA480B/EFA480BV
EFA480B
EFA480BV
12GHz
EPA480BV
EFA480B
EFA480BV.
gm 90 156 369
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