marking code s2a SOT23
Abstract: smbt3906 MMBT3906 infineon
Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E
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SMBT3906/
MMBT3906
SMBT3904/
MMBT3904
VPS05161
marking code s2a SOT23
smbt3906
MMBT3906 infineon
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MARKING s1P
Abstract: No abstract text available
Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161
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SMBT2222A/
MMBT2222A
SMBT2907A
VPS05161
MARKING s1P
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SMBT3906U
Abstract: No abstract text available
Text: SMBT3906U PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3904U (NPN)
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SMBT3906U
100mA
SMBT3904U
VPW09197
EHA07175
EHP00773
EHP00764
Jul-11-2001
SMBT3906U
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SMBT3906U
Abstract: No abstract text available
Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:
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SMBT3906.
MMBT3906
SMBT3906S
SMBT3906U:
SMBT3904.
MMBT3904
SMBT3906S/
SMBT3906/
MMBT3906
SMBT3906U
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s1P SOT23
Abstract: 619 SOT23-3 h11e
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration
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SMBT2222A/MMBT2222A
SMBT2907AW
SMBT2222A/MMBT2222A
s1P SOT23
619 SOT23-3
h11e
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3906 TRANSISTOR npn
Abstract: 1N916 PZT3904 PZT3906 VPS05163
Text: PZT3906 PNP Silicon Switching Transistor High DC current gain: 0.1mA to 100mA 4 Low collector-emitter saturation voltage Complementary type: PZT3904 NPN 3 2 1 Type Marking PZT3906 ZT 3906 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings
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PZT3906
100mA
PZT3904
VPS05163
OT223
EHP00302
EHP00715
Aug-20-2001
3906 TRANSISTOR npn
1N916
PZT3904
PZT3906
VPS05163
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SMBT2222A SOT23
Abstract: of ic 2907
Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2222A / MMBT2222A NPN • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2907A/MMBT2907A s2F
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SMBT2907A/MMBT2907A
SMBT2222A
MMBT2222A
SMBT2907A/MMBT2907A
SMBT2222A SOT23
of ic 2907
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ic power 22E
Abstract: H12E h11E SMBT3906U 1N916 SC74 SMBT3904U EHP00768
Text: SMBT3906U PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3904U (NPN)
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SMBT3906U
100mA
SMBT3904U
VPW09197
EHA07175
EHP00773
EHP00764
Nov-30-2001
ic power 22E
H12E
h11E
SMBT3906U
1N916
SC74
SMBT3904U
EHP00768
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SMBT3906S
Abstract: TRANSISTOR SMBT3906S 1N916 SMBT3904S VPS05604 H12E ic power 22E EHP00768
Text: SMBT3906S PNP Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package Complementary type: SMBT3904S (NPN)
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SMBT3906S
100mA
SMBT3904S
VPS05604
EHA07175
OT363
EHP00773
EHP00764
Nov-30-2001
SMBT3906S
TRANSISTOR SMBT3906S
1N916
SMBT3904S
VPS05604
H12E
ic power 22E
EHP00768
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h11E
Abstract: No abstract text available
Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P
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SMBT2222A/MMBT2222A
SMBT2907A
MMBT2907A
SMBT2222A/MMBT2222A
h11E
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Untitled
Abstract: No abstract text available
Text: SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT2222A/ MMBT2222A NPN 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration
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SMBT2907A/MMBT2907A
SMBT2222A/
MMBT2222A
VPS05161
SMBT2907A/MMBT2907A
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MARKING s1P
Abstract: 99V0
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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SMBT2222A
SMBT2907A
VPS05161
Nov-30-2001
2222/A
EHP00742
EHP00743
MARKING s1P
99V0
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Untitled
Abstract: No abstract text available
Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E
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SMBT3906/
MMBT3906
SMBT3904/
MMBT3904
VPS05161
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transistor marking S2A
Abstract: SMBT3906U
Text: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:
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SMBT3906.
MMBT3906
SMBT3906S
SMBT3906U:
SMBT3904.
MMBT3904
SMBT3904S
SMBT3906S/U
EHA07175
SMBT3906/
transistor marking S2A
SMBT3906U
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Q62702-A1202
Abstract: SMBT 3904S 1N916 3904S VPS05604
Text: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)
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3906S
100mA
3904S
VPS05604
OT-363
Q62702-A1202
EHP00773
EHP00764
Sep-07-1998
Q62702-A1202
SMBT 3904S
1N916
3904S
VPS05604
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power 22E
Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
Text: SMBT3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings
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SMBT3906
SMBT3904
VPS05161
EHP00773
EHP00768
Aug-20-2001
EHP00769
power 22E
TRANSISTOR S2A
s2A SOT23
1N916
SMBT3904
SMBT3906
H12E
sot23 transistor marking 12E
IC MARKING NS-05
marking s2A
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H12E
Abstract: SMBT3906U
Text: SMBT3906U PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA 5 4 6 Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 3 2 Complementary type: SMBT3904U (NPN)
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SMBT3906U
100mA
SMBT3904U
VPW09197
EHA07175
H12E
SMBT3906U
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power 22E
Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
Text: SMBT3906 PNP Silicon Switching Transistor 3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings
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SMBT3906
SMBT3904
VPS05161
EHP00773
EHP00768
Nov-30-2001
EHP00769
power 22E
TRANSISTOR S2A
SMBT3906
1N916
SMBT3904
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npn 2222 transistor
Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
Text: SMBT2222A NPN Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings
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SMBT2222A
SMBT2907A
VPS05161
2222/A
EHP00744
EHP00745
Jul-11-2001
npn 2222 transistor
s1P SOT23
SMBT2222A SOT23
SMBT2222A
SMBT2907A
MARKING s1P
MARKING 1B SOT23
EHN00056
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon Switching Transistor PZT 3906 • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3906
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OCR Scan
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PDF
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Q62702-Z2030
OT-223
EHN00057
A235bG5
122M7C
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBT 2907A PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-em itter saturation voltage • C om plem entary type: SM BT 2222A NPN Type Marking Ordering Code Pin Configuration SM BT 2907A s2F Q 68000-A6474
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OCR Scan
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PDF
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68000-A6474
OT-23
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1B Q68000-A6481 1=B
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OCR Scan
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PDF
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Q68000-A6481
OT-23
Jan-22-1999
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon Switching Transistor PZT 3906 • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN Type Marking Ordering Code (tape and reel) Pin Conf igural ion 1 2 4 3 Package1*
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OCR Scan
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PDF
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Q62702-Z2030
OT-223
PZT3906
EHP0071J
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transistor 2222a
Abstract: transistor 2222a CURRENT GAIN EHN0005 2222a sot23 2222A transistor
Text: SIEMENS SMBT 2222A NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP Type Marking Ordering Code Pin Configuration SMBT 2222A s1 B Q68000-A6481 1=B
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OCR Scan
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PDF
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Q68000-A6481
OT-23
EHN0005
EHN00056
10CK2,
Jan-22-1999
transistor 2222a
transistor 2222a CURRENT GAIN
2222a sot23
2222A transistor
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