RSF 800
Abstract: F27D EH50151 DH50204 EH50204 DH50156 M208
Text: SILICON PIN DIODES Microwave applications FAST SWITCHING SILICON PIN DIODES Description For fast switching, these passivated mesa diodes have a medium I layer < 50 µm . Electrical characteristics CHIP DIODES L CHIP E AND C PACKAGED T R IDIODES C A E Characteristics Gold Breakdown Junction
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EH50151
EH50152
EH50153
EH50154
EH50155
EH50156
EH50157
EH50201
EH50202
EH50203
RSF 800
F27D
DH50204
EH50204
DH50156
M208
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M208
Abstract: No abstract text available
Text: SILICON PIN DIODES Microwave applications Fast switching silicon PIN diodes Description For fast switching, these passivated mesa diodes have a medium I layer < 50 µm . Electrical characteristics CHIP DIODES E L CHIP E AND C PACKAGED T R IDIODES C A Characteristics Gold Breakdown Junction
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EH50151
EH50152
EH50153
EH50154
EH50155
EH50156
EH50157
EH50201
EH50202
EH50203
M208
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sqm1150
Abstract: smd diode f54 sqm1250 DH60034 srd dh294 bh16 transistor step recovery diode dh252 temex DH252 M208 B1 DH294
Text: MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 All specifications contained in that catalog are subject to change without notice.
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Untitled
Abstract: No abstract text available
Text: SILICON PIN DIODES Microwave applications FAST SWITCHING SILICON PIN DIODES Description For fast switching, these passivated mesa diodes have a medium I layer < 50 µm . Electrical characteristics CHIP DIODES L CHIP E AND C PACKAGED T R IDIODES C A E Characteristics Gold Breakdown Junction
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BH142
EH50256,
EH50404
EH50405
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