Untitled
Abstract: No abstract text available
Text: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction
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EH50072
EH50073
EH50074
EH50075
EH50076
EH50077
EH50101
EH50102
EH50103
EH50104
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dh50076
Abstract: EH50052 M208
Text: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction
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EH50033
EH50034
EH50035
EH50036
EH50037
EH50052
EH50053
EH50054
EH50055
EH50056
dh50076
M208
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dh50076
Abstract: DH50037 M208
Text: SILICON PIN DIODES Microwave applications Ultrafast switching silicon PIN diodes Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction
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EH50033
EH50034
EH50035
EH50036
EH50037
EH50052
EH50053
EH50054
EH50055
EH50056
dh50076
DH50037
M208
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sqm1150
Abstract: smd diode f54 sqm1250 DH60034 srd dh294 bh16 transistor step recovery diode dh252 temex DH252 M208 B1 DH294
Text: MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 All specifications contained in that catalog are subject to change without notice.
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