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    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI4164MEV-RP 4M egx16 EDO DRAM ELECTRONIC DESIGNS, INC 4 Megabit x 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 4M x16 DRAM allows the user 4 Meg x 16 bit CMOS Dynamic to capitalize on the cost advantage of using a plastic


    OCR Scan     		PDF EDI4164MEV-RP egx16 cydes/64m pr64M EV50SI 4164M EV60SI EDI4164MEV70SI EDI4164MEV-RP

    EDI4164MEV50SM

    Abstract: ed09 EDI4164MEV-RP Edd 44 EDI4164MEV60SM EDI4164MEV60SI EDI4164MEV
    Text: ^EDI EDI4164MEV-RP 4M egx16 EDO DRAM ELECTRONIC DESIGNS. INC 4 Megabit x 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 4M x16 DRAM allows the user 4 Meg x 16 bit CMOS Dynamic to capitalize on the cost advantage of using a plastic


    OCR Scan     		PDF EDI4164MEV-RP 4Megx16 cycles/64ms 4Mx16 EDI4164MEV60SM EDI4164MEV70SM EDI4164MEV50SI EDI4164MEV60SI EDI4164MEV70SI 01581USA EDI4164MEV50SM ed09 EDI4164MEV-RP Edd 44 EDI4164MEV

    Untitled

    Abstract: No abstract text available
    Text: 1 MEG x 16 EDO DRAM |U|IC=RON MT4C1M16E5 MT4LC1M16E5 DRAM VrìfAlVl FEATURES • JEDEC- and industry-standard x l6 tim ing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single power supply +3.3V ±0.3V or 5V ±10%


    OCR Scan     		PDF 024-cycle 44/50-Pin

    Untitled

    Abstract: No abstract text available
    Text: W D EDI4161MEV-RP \ ELECTRONIC-DESIGN INC, 1 1 M e g X K EDO D RAM 7 Megabitx 16Dynamic RAM 33V, ExtendedData Out Features EDI's mggedized plastic 1 Mx16 DRAM allows the user to capitalize on the cost advantage of using a plastic compo- 1 Meg x 16 bit CMOS Dynamic


    OCR Scan     		PDF EDI4161MEV-RP 16Dynamic cycles/16ms 01581USA EDI4161MEV-RP

    DQ131

    Abstract: MT48LC16M16A2TG8E
    Text: ADVANCE M IC R O N * I 2 56 M b : xV TCCHW LOOY.INC. SYNCHRONOUS DRAM nV ,1,5 SD R A M MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sh ee t revisions, p le a s e refer to the Micron


    OCR Scan     		PDF 192-cycle MT48LC64M4A2 MT48LC32M8A2 54-PIN 256Mb 256MSDRAM DQ131 MT48LC16M16A2TG8E

    Untitled

    Abstract: No abstract text available
    Text: M il“ C a a iS J I L IL z 64Mb: x4, x8, x16 SDRAM MT48LC16M4A2 -4 Meg x 4 x 4 banks MT48LC8M8A2- 2 Meg x 8 x 4 banks MT48LC4M16A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msD/htmi/datasheet.htmi


    OCR Scan     		PDF MT48LC16M4A2 MT48LC8M8A2- MT48LC4M16A2 PC66-, PC100- PC133-compliant

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 128Mb: x4, x8, x16 SDRAM MICRON' I TECHNOLOGY, INC. M T48LC32M 4A2 - 8 Meg x 4 x 4 banks M T48LC16M 8A2 - 4 Meg x 8 x 4 banks M T48LC8M 16A2 - 2 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest full-length data sheet, please refer to the Micron


    OCR Scan     		PDF 128Mb: T48LC32M T48LC16M T48LC8M PC100- PC133-compliant

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MICRON' I 256M b:X\ * 8 , X 1 6 TCCHWLOOY.INC. S D R A I V I MT48LC64M4A2 - 1 6 M e g x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron


    OCR Scan     		PDF MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PCI00-compliant; 54-PIN 256Mb: 256MSDRAM

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC \í M I C K OS V S T 32 Megabit FLASH EEPROM DP5Z2ME16Pn3 M S PRELIMINARY DESCRIPTION: The D P 5 Z 2 M E 1 6 P n 3 "S L C C " devices are a revolutionary n e w m em ory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Lead less C hip


    OCR Scan     		PDF DP5Z2ME16Pn3 200ns

    Untitled

    Abstract: No abstract text available
    Text: 64 M E G :X 4e X nnX A M MICRON I TECHNOLOGY, INC. Q ^ ^ jy j MT48LC16M4A1 /A2 -4 Meg x 4 x 4 banks MT48LC8M8A1/A2 - 2 Meg x 8 x 4 banks MT48LC4M16A1/A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM FEATURES • PCIOO-compliant, includes CONCURRENT AUTO PRECHARGE


    OCR Scan     		PDF MT48LC16M4A1 MT48LC8M8A1/A2 MT48LC4M16A1/A2 096-cycle, 54-PIN

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI4161MEV-RP ELECTRONIC DESIGNS, INC I • W e g x W EDO DRAM 1Megabitx 16Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 1 M xl 6 DRAM allows the user to capitalize on the cost advantage of using a plastic com po­ 1 Meg x 16 bit CMOS Dynamic


    OCR Scan     		PDF EDI4161MEV-RP 16Dynamic EDI4161MEV-RP 1Q179

    20 NAC 12 I T2

    Abstract: Edd 44 EDI4161MEV-RP
    Text: ^EDI EDI4161MEV-RP ELECTRONIC DESIGNS, INC. I • egx16 EDO DRAM 1Megabitx 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 1Mx16 DRAM allows the user to capitalize on the cost advantage o f using a plastic compo­ 1 Meg x 16 bit CMOS Dynamic


    OCR Scan     		PDF EDI4161MEV-RP cycles/16ms 1Mx16 mili1MEV60MI EDI4161MEV70MI U--0315 018-J 01581USA EDI4161MEV-RP 20 NAC 12 I T2 Edd 44

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC MICROSYSTEMS 64 Megabit FLASH EEPROM DP5Z4MW16Pn3 P R E L IM IN A R Y D E S C R IP T IO N : Th e D P 5 Z 4 M W 1 6 P n 3 " S L C C " devices are a revolutionary new m em ory subsystem using D ense-Pac M icrosystem s' ceram ic Stackable Leadless C h ip


    OCR Scan     		PDF DP5Z4MW16Pn3 50-pin 120ns 150ns 200ns 30A161-24

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR IN C MICRON I b3 E D 1 M EG DRAM MODULE • X blllSMT 32, 2 M E G X 0000032 HT T ■ URN MT8D132 16 D R A M M O D U L E 1 MEGx 32’ 2 MEGx 16 FAST-PAGE-MODE MT8D132 LOW POWER, POWER, LOW EXTENDED REFRESH (MT8D132 L) FEATURES PIN ASSIGNMENT (Top View)


    OCR Scan     		PDF MT8D132 MT8D132) MT8D132 72-pin 800mW 024-cycle MT80132 MT6D132

    PC133 registered reference design

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N I 256Mb: x4 ’cx bXAM TECHNOLOGY, INC. MX l\ / l MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest full-length data sheet, please refer to the Micron


    OCR Scan     		PDF 256Mb: PC100- PC133-com 192-cycle MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC133 registered reference design

    531030

    Abstract: MSM27C1622BZ 02CM 27C131 27c822 27c832
    Text: M ask RO M s 1 Meg 2 Meg 4 Meg I 8 Meg i I I i i 128Kx8 256K x 8 512K x 8 I I 1-Meg x 8 I 2-Meg x 8 I M SM 531020B M SM 531000B M SM 531030B M SM 531021B M S M 5 3 1001B M SM 531031B M SM 532021B M SM 532001B M SM 532031B M S M 5 34 0 21 C M S M 5 34 0 01 C


    OCR Scan     		PDF 128Kx8 531020B 531000B 531030B 531021B 1001B 531031B 532021B 532001B 532031B 531030 MSM27C1622BZ 02CM 27C131 27c822 27c832