12v 1200mah battery NiMH
Abstract: 12v 1200mah nimh battery db opera 415 12v 1200mah nimh 12v 1200mah battery
Text: y UCC2956 UCC3956 mmm UNITRODE Switch Mode Lithium-Ion Battery Charger Controller FEATURES Precision 4.1V Reference 1% High Efficiency Battery Charger Solution Average Current Mode Control from Trickle to Over Charge Resistor Programmable Charge Currents
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UCC2956
UCC3956
UCC3956
SEM700,
680pF
12v 1200mah battery NiMH
12v 1200mah nimh battery
db opera 415
12v 1200mah nimh
12v 1200mah battery
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TIM1414-4LA-371
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM1414-4LA-371 RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at ldB Compression Point Linear Gain SYMBOL PldB Drain Current Power Added Efficiency 3rd Order Intermodulation
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TIM1414-4LA-371
TIM1414-4LA-371
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Untitled
Abstract: No abstract text available
Text: SILICON EPITAXIAL JUNCTION TYPE HIGH EFFICIENCY RECTIFIER HED 1DL41A SWITCHING TYPE POWER SUPPLY APPLICATIONS. Repetitive Peak Reverse Voltage Vr r m =200V Average Forward Current IF ( A V ) = 1 . 0 A (Ta=64°C) V a r y Fast Reverse-Recovery Time 35ns (Max.)
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1DL41A
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ues704
Abstract: No abstract text available
Text: RECTIFIERS UES704 UES705 UES706 UES704HR UES705HR UES706HR High Efficiency, 20A FEATU RES DESCRIPTIO N • • • • • • The UES704 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz.
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UES704
UES705
UES706
UES704HR
UES705HR
UES706HR
50nSec)
UES704,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TA8210AH/AL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8210AH, TA8210AL 20W BTLX2CH AUDIO POWER AMPLIFIER The thermal resistance dj-T of TA8210AH, TA8210AL package designed for low thermal resistance, has a high efficiency of heat radiation.
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TA8210AH/AL
TA8210AH,
TA8210AL
TA8210AL
HZIP17-P-2
575TYP
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz
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TIM5964-8SL
TIM5964-8SL
MW50750196
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BYV27-50
Abstract: BYV27-100 BYV27-150 UES1103 UES1101 UES1100
Text: RECTIFIERS High Efficiency, 2.5A UES1101 UES1102 UES1103 FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package BYV27-50 BYV27-100 BYV27-150 DESCRIPTION An axial leaded power rectifier useful in many switching applications.
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UES1101
UES1102
UES1103
BYV27-50
BYV27-100
BYV27-150
UES1X02
UES1103
BYV27-150
UES1100
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LT10711
Abstract: No abstract text available
Text: LT1071, LT1071HV 2.5-A HIGH-EFFICIENCY SWITCHING REGULATORS D3344, JULY 19B 9-R E V IS E D A U G U S T 1991 Wide Supply-Voltage Range: LT1071HV . . . 3 V to 60 V LT1071 . . . 3 V to 40 V KC AND KV PACKAGE KV Package Used for Illustration (TOP VIEW) Low Quiescent Current. . . 6 mA Typ
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LT1071,
LT1071HV
D3344,
LT1071HV
LT1071
LT1071HVCKC
LT1071CKC
LT1071HVIKC
LT1071IKC
LT10711
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TC160G
Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
Text: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate
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TC170C
250ps
TC160G
toshiba LGA Nand
TC170C14
TC26SC
TC170C1
TC170C29
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Transistor c 4138
Abstract: TIP36 Application Note RFK25 IRF540 p channel
Text: IN T E G R A T E D C IR C U IT S y UNITRODE High Efficiency Regulator Controller FEATURES • Complete Control fo r a High Current, Low Dropout, Linear Regulator • Fixed 5V or Adjustable O utput Voltage • Accurate 2.5A C urrent L im itin g w ith Foldback
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UC1835
UC1836
UC2835
UC2836
UC3835
UC3836
TIP30
D41D4
TIP32
D45C2
Transistor c 4138
TIP36 Application Note
RFK25
IRF540 p channel
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Untitled
Abstract: No abstract text available
Text: RECTIFIERS SES5601C SES5602C SES5603C High Efficiency, 25A Center-Tap FEATURES • Low Forward Voltage • Fast Switching Speed • Convenient Package • High Surge Capability • Low Thermal Resistance • Mechanically Rugged TO-3 Package • Available as Positive or Negative Center-Tap
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SES5601C
SES5602C
SES5603C
SES5601C.
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2sc1764
Abstract: No abstract text available
Text: 2SC1764 SILICON NPN EPITAXIAL PLANAR TYPE 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm FEATURES : . Specified 28V, 28MHz Characteristics : Output Power : Po=80Wpjjp : Minimum Gain : Gpe=14.5dB : Efficiency : ’i'c=40%(Min.)
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2SC1764
30MHz
28MHz
80Wpjjp
-30dB
80WpEP
100pF
6000pF
2sc1764
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Untitled
Abstract: No abstract text available
Text: TA8401F FUNCTIONAL BRIDGE DRIVER. . Wide operating Supply Voltage Range : Vccopr MIN =3V . Capsealed in Flat Package 16 pin. . Forward and Reverse Rotation, Short Breke Modes are Available by Means of Rotation Control Signals. . High Efficiency is Obtained.
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TA8401F
-500mA)
-25mA)
Don11
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Untitled
Abstract: No abstract text available
Text: y UCC3996 U I M IT R O D E ADVANCE INFORMATION Dual Sequencing Hot Swap Power Manager FEATURES DESCRIPTION • Precise Linear Current Amplifier for high efficiency and low voltage drop The UCC3996 family of Hot Swap Power Managers provides hot swap control, fault handling and power supply sequencing of two positive sup
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UCC3996
UCC3996
UCC3996.
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100L2CZ
Abstract: 10GL2CZ 100L2C 10FL2CZ 10dl2cz
Text: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 10(D,F,G)L2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION. Unit in mm CONVERTER & CHOPPER APPLICATION. 10.3 MAX 03.2±O .2 • Repetitive Peak Reverse Voltage : V^^=200, 300, 400V • Average Output Recified Current : Io=10A
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L2CZ47A
100L2CZ47A
10FL2CZ47A
10GL2CZ47A
100L2CZ
10GL2CZ
100L2C
10FL2CZ
10dl2cz
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lpec
Abstract: No abstract text available
Text: RECTIFIERS SES5801 SES5802 SES5803 High Efficiency, 60A FEATURES • Low Forward Voltage • Fast Switching Speeds • High Surge Capability • Low Thermal Resistance • Mechanically Rugged DO-5 Package • Reverse Polarity Available DESCRIPTION The SES, super-fast recovery, rectifiers are
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SES5801
SES5802
SES5803
SES5801
SES5802
lpec
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC8007-H NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS SOP-8 LITHIUM ION BATTERY APPLICATIONS
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TPC8007-H
10//A
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Untitled
Abstract: No abstract text available
Text: RECTIFIERS SES5701 SES5702 SES5703 High Efficiency, 20A FEATURES • Low Forward Voltage • Fast Switching • Low Thermal Resistance • High Surge Capability • Mechanically Rugged DO-4 Package • Reverse Polarity Available DESCRIPTION The SES, super-fast recovery, rectifiers are
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SES5701
SES5702
SES5703
SES5701
SES5702
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1001-UES1003
Abstract: No abstract text available
Text: RECTIFIERS UES1001-UES1003 High Efficiency, 1A FEATURES • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast
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1001-UES1003
UES1001
UES1002
UES1003
1001-UES1003
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S-AU4
Abstract: toshiba rf module
Text: S-AU4 RF POWER AMPLIFIER MODULE UHF POWER AMPLIFIER MODULE HAM SSB/FM Unit in FEATURES : . Output Power P0á 17W . Minimum Gain Gp=19.2dB . Efficiency ÏT — 35% . 50 0 2— R 2.1±0.2 5 2 .8 15 2T CJ c5 -H -H % Input/Output Impedance n 5 -g fa 5*0115
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Untitled
Abstract: No abstract text available
Text: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 37.0 38.0 — dBm
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TIM1414-7-252
IGS---72pA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r
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TIM7785-16SL
MW51130196
TIM7785-16SL
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING TYPE PO W ER SUPPLY APPLICATION U nit in mm CONVERTER & CHOPPER APPLICATION 15.9 M A X. • Repetitive Peak Reverse Voltage V r r m = 600V • A verage Output Recified Current
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30JL2C41
961001EAA2'
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high voltage linear regulator negative
Abstract: mag amp
Text: Power Supply Support Functions High Efficiency Linear Regulators UC1834/ UC2834/ UC3834 High Efficiency, Linear Regulator • Equally usable for either positive or negative regulators • 5A load with 0.5V Vin-Vout using external transistor • Internal precision positive and negative references
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UC1834/
UC2834/
UC3834
100mA
16-pin
UC1835/2835/3835
UC1836/2836/3836
UC1835/6
UCI838/2838/3838
high voltage linear regulator negative
mag amp
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