M28F512-12C3
Abstract: 93C56P xicor 28C64 AT28C17-25PC 93C66P m5m28f102j AT28C16-20PC ATMEL serial EEPROM 32K 93C56SN eeprom 28c64
Text: Main Menu September 2001 Cross Reference Guide Main Menu Main Menu Table of Contents Product Page Number Featured Product Information Serial EEPROM Atmel Fairchild Microchip ST Microelectronics Xicor 3-Wire/Microwire Serial EEPROM Atmel Microchip Fairchild
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11F-16,
M28F512-12C3
93C56P
xicor 28C64
AT28C17-25PC
93C66P
m5m28f102j
AT28C16-20PC
ATMEL serial EEPROM 32K
93C56SN
eeprom 28c64
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28CXX
Abstract: 28C64 28C64 EEPROM 93CXX 200B 24LC16 AN601 28Cxxx
Text: AN601 EEPROM Endurance Tutorial Author: BASIC TERMS David Wilkie Reliability Engineer INTRODUCTION The endurance of an EEPROM-based device will be quoted by a manufacturer in terms of the minimum number of erase/write cycles write cycles that the device is capable of sustaining before failure. A write
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AN601
DS00601A-page
28CXX
28C64
28C64 EEPROM
93CXX
200B
24LC16
AN601
28Cxxx
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ST93C86
Abstract: d87c257 D27128 NEC AM27020 d2732 UPD6252 ST93C76 NEC D2732 microchip CY7C63000 GAL20AS
Text: GALEP 4 - device support for GALEP32 software version 1.14.12 ! Bauteile im DIL Gehäuse benötigen keinen Adapter ! Devices in DIL package do not require any adapter -EEPROM
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GALEP32
AT28C010
AT28C04
AT28C16
AT28C17
AT28C256
AT28C256
AT28C64
AT28C64B
CAT28C16A
ST93C86
d87c257
D27128 NEC
AM27020
d2732
UPD6252
ST93C76
NEC D2732
microchip CY7C63000
GAL20AS
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28C64AP
Abstract: 28C64A 28C64APC-2 hex55 ROM 8K x 8
Text: Turbo IC, Inc. 28C64A HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times
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28C64A
28C64AP
28C64A
28C64APC-2
hex55
ROM 8K x 8
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28C64A-15
Abstract: 28C64A ic 8870 ttl
Text: 28C64A 64K 8K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K nonvolatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the
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28C64A
28C64A
DS11109G-page
28C64A-15
ic 8870 ttl
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28C64 EEPROM
Abstract: eeprom 28c64 28c64 OB9028 K1909 6D9709 8823 2C9236 6B1999-1 6A9616
Text: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C64 CMOS EEPROM RELIABILITY DATA -150°C DYNAMIC OPERATING LIFE TEST -DATA RETENTION BAKE (200°C) -CYCLE TEST -125°C DYNAMIC OPERATING LIFE TEST (PLASTIC) -15 PSIG PRESSURE POT -85°C/85% RELATIVE HUMIDITY LIFE TEST
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AT-28C64
AT-28C64
187-3B
133317B2
232510B-2
3A0781
3A0782B1
4B1973
4D1971
4D1971-2
28C64 EEPROM
eeprom 28c64
28c64
OB9028
K1909
6D9709
8823
2C9236
6B1999-1
6A9616
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am29ma16
Abstract: AM29M16 AM29M16 PLD atmel 404 93c46 29f512 gal18v8 ATMEL 24C32A COP8622C atmel 93C46 AT27040
Text: Ironwood Electronics Programming Adapters PR.1 Programming Adapters allow the programming of PROM, PLD, EPROM, EEPROM or PAL devices on programmers or ATE equipment with DIP sockets. We support PLCC, LCC, PGA, SOIC including TSOP , FP, BGA and QFP packages.
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Untitled
Abstract: No abstract text available
Text: CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.
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CAT28C64B
64K-Bit
90/120/150ns
CAT28C64B
MD-1011,
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1N914
Abstract: 28C64B 28C64B-12 28C64B-15 28C64B-90 CAT28C64B CAT28C64BGI-12T CAT28C64BGI-15T MAXS-100 CAT28C64BWI-12T
Text: CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.
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CAT28C64B
64K-Bit
90/120/150ns
CAT28C64B
MD-1011,
1N914
28C64B
28C64B-12
28C64B-15
28C64B-90
CAT28C64BGI-12T
CAT28C64BGI-15T
MAXS-100
CAT28C64BWI-12T
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28C64B
Abstract: CAT28C64B 1N914 28C64B-12 28C64B-15 28C64B-90 CAT28C64BNI-15T
Text: CAT28C64B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.
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CAT28C64B
64K-Bit
90/120/150ns
CAT28C64B
28C64B
1N914
28C64B-12
28C64B-15
28C64B-90
CAT28C64BNI-15T
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eeprom 2816
Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
Text: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel
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2864B
AT28HC16
AT28C64
AT28C64E
AT28C64X
AT28HC64
AT28PC64
AT28C64F
AT28C2S6
AT28C256F
eeprom 2816
2816A eeprom
Atmel eeprom Cross Reference
eeprom Cross Reference
EEPROM 2864 INTEL
28C64 EEPROM
xicor 28C64
Xicor 28C010
Xicor 2864
intel 2864
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28C64 EEPROM
Abstract: pd28c64 nec 28C64 27c eeprom
Text: m JUPD28C64 8192 X 8-Bit CMOS EEPROM e NEC Electronics Inc. Description Pin Configuration The^PD28C64 is a 65,536-bit electrically erasable and programmable read-only memory EEPROM orga nized as 8,192 x 8 bits and fabricated with an advanced CMOS process for high performance and tow power
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uPD28C64
PD28C64
536-bit
/jPD28C64
32-byte
28-pin
/JPD28C64
28C64 EEPROM
nec 28C64
27c eeprom
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Untitled
Abstract: No abstract text available
Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES -40°C to +85°C DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non volatile etectricaly Erasable PROM. The 28C64A is accessed ike a static RAM for the read orwrite cycles without
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28C64A
Time--200
DS111091-page
28C64A
8x20mm
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KM28C64A20
Abstract: KM28C64A-20
Text: KM28C64A/KM28C65A CMOS EEPROM 8 K /8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • Sim ple Byte W rite & Page W rite — Single TTL Level W rite Signal
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KM28C64A/KM28C65A
28C64A/65A:
I/65A
28C65A)
64-Byte
150ns
1555H
KM28C64A20
KM28C64A-20
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PDF
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Untitled
Abstract: No abstract text available
Text: $ 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES BLOCK DIAGRAM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100nA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years
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28C64A
100nA
28-pin
28-Lead,
44-Lead,
10x10mm)
bl03201
001DS11
DS00049E
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26c64
Abstract: 26C64A
Text: $ 28C64A M ic r o c h ip 64 K 8K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non-volatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte
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Time--200
28-pin
32-pin
8x20mUPPORT
28C64AF
8x20mm
28C64A
DS11109F-page
26c64
26C64A
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PDF
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M28C64
Abstract: M28C64-W PDIP28 PLCC32 S028
Text: SGS-THOMSON iyitEïïïïÂQDtES M 28C64 64K 8K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTION • FAST ACCESS TIME: - 90 ns a t5 V - 120ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION
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M28C64
120ns
M28C64-xxW
PDIP28
PLCC32
TSOP28
TSOP28
M28C64
M28C64-W
PDIP28
PLCC32
S028
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PDF
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Untitled
Abstract: No abstract text available
Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time— 200 jxs or 1 ms • Data Retention >10 years
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28C64A
28-pin
DS11109F-page
Q01B421
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PDF
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28C64A
Abstract: 28C64A-15 28C64A-20 28C64A-25 MS-011
Text: 28C64A 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write
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28C64A
28-pin
32-pin
MS-016AE
DS00049M-page
28C64A
28C64A-15
28C64A-20
28C64A-25
MS-011
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PDF
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28C64A
Abstract: A12C
Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years
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28-pin
32-pin
28C64A
A12C
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PDF
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Untitled
Abstract: No abstract text available
Text: KM28C64A/KM28C65A CMOS EEPROM 8 K x 8 Bit C M O S Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • S im ple Byte W rite & Page W rite — Single TTL Level W rite Signal
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KM28C64A/KM28C65A
28C64A/65A:
I/65A
28C65A)
64-Byte
150ns
00f/Aâ
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KM28C64A-20
Abstract: KM28C64A15 KM28C65A KM28C65A-20 KM28C64A-25 KM28C64A-12 KM28C65A15 KM28C64A25
Text: SAMSUNG ELECTRONICS INC D • 7^4142 OOlböfiO TSS SflGK CMOS EEPROM KM28C64A/KM28C65A 8 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64AJ65A: Commercial — KM28C64AK65AI: Industrial • Simple Byte Write & Page Write
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KM28C64A/KM28C65A
KM28C64A/65A:
KM28C64AK65AI:
KM28C65A)
64-Byte
120ns
7Tb4142
KM28C64A/KM28C65A
KM28C64A-20
KM28C64A15
KM28C65A
KM28C65A-20
KM28C64A-25
KM28C64A-12
KM28C65A15
KM28C64A25
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PDF
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Untitled
Abstract: No abstract text available
Text: 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 n-A Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write
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28C64A
28-pin
32-pin
DS11109G-I
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PDF
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Untitled
Abstract: No abstract text available
Text: JÊ Ë Ê È L * & 28C64A M ig z r o n c h ip i 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms
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OCR Scan
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28-pin
32-pin
DS111251-page
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PDF
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