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    EDO RAM 4MX16 Search Results

    EDO RAM 4MX16 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    6167LA100DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167LA70DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167SA55DB Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    8413204YA Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    8413205YA Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation
    6167SA25P Renesas Electronics Corporation 16K(16KX1)CMOS STATIC RAM Visit Renesas Electronics Corporation

    EDO RAM 4MX16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EDI4164MEV50SM

    Abstract: EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI
    Text: EDI4164MEV-RP HI-RELIABILITY PRODUCT 4Mx16 EDO Extended Data Out Dynamic RAM 3.3V FEATURES • 4 Meg x 16 bit CMOS Dynamic RAM ■ RAS - Only, CAS-before-RAS, and HIDDEN refresh capability ■ Package: ■ Low Operating Power Dissipation ■ Access Time: 50, 60 and 70ns


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    PDF EDI4164MEV-RP 4Mx16 EDI4164MEV50SM EDI4164MEV60SM EDI4164MEV70SM EDI4164MEV50SI EDI4164MEV60SI EDI4164MEV70SI EDI4164MEV50SM EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI

    KM416V4104BS

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F404BS KMM374F404BS EDO Mode without buffer 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F404BS is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F404BS


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    PDF KMM374F404BS KMM374F404BS 4Mx16 4Mx72bits 4Mx16bits 300mil 168-pin KM416V4104BS

    KMM374F804BS

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS


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    PDF KMM374F804BS KMM374F804BS 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F804BS1-L KMM466F804BS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804BS1-L is a 8Mx64bits Dynamic • Part Identification RAM high density memory module.


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    PDF KMM466F804BS1-L KMM466F804BS1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil

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    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F804CS1-L KMM466F804CS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804CS1-L is a 8Mx64bits Dynamic RAM high density memory module. The • Part Identification


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    PDF KMM466F804CS1-L KMM466F804CS1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil

    Untitled

    Abstract: No abstract text available
    Text: September 1996 Revision 1.0 DATA SHEET EDC4UV644 2/4 -(60/70)(J/T)G-S 32MByte (4M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC4UV644(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.


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    PDF EDC4UV644 32MByte 32-megabyte 168-pins, MB81V1 32MBom MP-DRAMM-DS-20389-9/96

    tsop 138

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0805DT1-C M374F0805DT1-C Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0805DT1-C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung


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    PDF M374F0805DT1-C M374F0805DT1-C 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin tsop 138

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0404DT2-L M466F0404DT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404DT2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


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    PDF M466F0404DT2-L M466F0404DT2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404BS2-L KMM466F404BS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


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    PDF KMM466F404BS2-L KMM466F404BS2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil

    KMM466F404CS2-L

    Abstract: No abstract text available
    Text: DRAM MODULE KMM466F404CS2-L KMM466F404CS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404CS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification


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    PDF KMM466F404CS2-L KMM466F404CS2-L 4Mx16, 4Mx64bits cycles/128ms, 4Mx16bits 400mil

    M466F0804DT1-L

    Abstract: No abstract text available
    Text: DRAM MODULE M466F0804DT1-L M466F0804DT1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0804DT1-L is a 8Mx64bits Dynamic RAM high density memory module. The • Part Identification


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    PDF M466F0804DT1-L M466F0804DT1-L 4Mx16, 8Mx64bits cycles/128ms, 4Mx16bits 400mil

    K4E641612D-T

    Abstract: No abstract text available
    Text: M372F0805DT0-C DRAM MODULE M372F0805DT0-C EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372F0805DT0-C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung M372F0805DT0-C consists of eight


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    PDF M372F0805DT0-C M372F0805DT0-C 4Mx16 8Mx72bits 4Mx16bits 400mil 168-pin K4E641612D-T

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804CS1 KMM374F804CS1 Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804CS1 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804CS1 consists of eight CMOS 4Mx16bits


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    PDF KMM374F804CS1 KMM374F804CS1 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin

    4MX16

    Abstract: No abstract text available
    Text: 64MB 144 PIN SO-DIMM With 4Mx16 EDO DRAM 3.3VOLT TS8MES64V6EZ Pin Identification Description The TS8MES64V6EZ is an 8M x 64-bit dynamic Symbol Function RAM high-density memory module. It consists of A0~A11 Address inputs 8pcs of 4Mx16 DRAMs assembled on the printed


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    PDF 4Mx16 TS8MES64V6EZ TS8MES64V6EZ 64-bit TS8MES64V6EV

    KMM5324004BSW

    Abstract: KMM5324004BSWG
    Text: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages


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    PDF KMM5324004BSW/BSWG KMM5324004BSW/BSWG 4Mx16, KMM5324004B 4Mx32bits KMM5324004B 4Mx16bits 72-pin KMM5324004BSW KMM5324004BSWG

    Untitled

    Abstract: No abstract text available
    Text: September 1996 Revision 1.0 FUJITSU DATA SHEET - EDC4U V644 2/4 -(60/70)(J/T)G-S 32MByte (4Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDG4UV644(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module


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    PDF 32MByte EDG4UV644 32-megabyte 168-pins, MB81V1

    KM416C4104AS

    Abstract: kmm5328004asw km416c4104a
    Text: Preliminary KMM5328004ASW/ASWG DRAM MODULE KMM5328004ASW/ASWG EDO Mode 8M X 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004A is a 8Mx32bits Dynamic RAM - Part Identification high density memory module. The Samsung KMM5328004A


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    PDF KMM5328004ASW/ASWG 4Mx16, KMM5328004A 8Mx32bits 4Mx16bits 72-pin KMM5328004ASW/ASWG KMM5328004ASW KM416C4104AS km416c4104a

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804BS KMM374F804BS Fast EDO Mode without buffer 8M X 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804BS is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804BS


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    PDF KMM374F804BS KMM374F804BS 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin

    KMM5324

    Abstract: No abstract text available
    Text: Preliminary DRAM MODULE KMM5324004ASW/ASWG KMM5324004ASW/ASWG EDO Mode 4M X 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 5324004A is a 4Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KM M 5324004A


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    PDF KMM5324004ASW/ASWG 4Mx16, 324004A 4Mx32bits 4Mx16bits 72-pin KMM5324004ASW/ASWG 5324004ASW KMM5324

    KM416C4104AS

    Abstract: KM416C4104a KM44C4005BS
    Text: Preliminary KMM5364005ASW/ASWG DRAM MODULE KMM5364005ASW/ASWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005A is a 4Mx36bits Dynamic RAM - Part Identification high density memory module. The Samsung KMM5364005A


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    PDF KMM5364005ASW/ASWG KMM5364005ASW/ASWG 4Mx16 KMM5364005A 4Mx36bits 4Mx16bits 72-pin KMM5364005ASW KM416C4104AS KM416C4104a KM44C4005BS

    KM416V4104AS-L

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F404AS/AZ-L KMM332F404AS/AZ-L EDO Mode 4M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F404A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332F404A


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    PDF KMM332F404AS/AZ-L KMM332F404AS/AZ-L 4MX16, KMM332F404A 8Mx32bits 4Mx16bits 72-pin KM416V4104AS-L

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372E404BS KMM372E404BK/BS EDO Mode 4M x 72 DRAM DIMM Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAM in


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    PDF KMM372E404BK/BS 4Mx16 KMM372E404B 4Mx72bits 4Mx16bits 400mil 168-pin KMM372E404BS

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466F404AS-L DRAM MODULE KMM466F404AS-L EDO Mode without buffer 4Mx64 based on 4Mx16, 4K Refresh, 3.3V, Low power/Self-Refresh G ENERAL DESCRIPTIO N FEATURES The Samsung KMM466F404AS-L is a 4M bit x 64 Dynamic RAM high density memory module. The


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    PDF KMM466F404AS-L KMM466F404AS-L 4Mx64 4Mx16, 466F404AS-L cycles/128ms, 1000mil) DDBE733

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332F804AS/AZ-L KMM332F804AS/AZ-L EDO Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332F804A


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    PDF KMM332F804AS/AZ-L KMM332F804AS/AZ-L 4MX16, KMM332F804A 8Mx32bits 4Mx16bits 72-pin