Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    EDO 64MB Search Results

    EDO 64MB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RMWV6416AGSD-5S2#AA0 Renesas Electronics Corporation 64Mb Advanced LPSRAM (4M word × 16bit / 8M word x 8bit) Visit Renesas Electronics Corporation
    RMWV6416AGSA-5S2#AA0 Renesas Electronics Corporation 64Mb Advanced LPSRAM (4M word × 16bit / 8M word x 8bit) Visit Renesas Electronics Corporation
    RMWV6416AGSA-5S2#KA0 Renesas Electronics Corporation 64Mb Advanced LPSRAM (4M word × 16bit / 8M word x 8bit) Visit Renesas Electronics Corporation
    RMWV6416AGBG-5S2#AC0 Renesas Electronics Corporation 64Mb Advanced LPSRAM (4M word × 16bit / 8M word x 8bit) Visit Renesas Electronics Corporation
    RMWV6416AGSD-5S2#HA0 Renesas Electronics Corporation 64Mb Advanced LPSRAM (4M word × 16bit / 8M word x 8bit) Visit Renesas Electronics Corporation

    EDO 64MB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M13S2561616A-5TG

    Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
    Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now


    Original     		PDF 256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII

    74LVT16244

    Abstract: No abstract text available
    Text: November 1996 Revision 1.0 DATA SHEET EDC8BV724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC8BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module


    Original     		PDF EDC8BV724 64MByte 64-megabyte 168-pins, MB81V1 74LVT16244 MP-DRAMM-DS-20439-11/96

    A1-A10

    Abstract: No abstract text available
    Text: SL72B4B8M2F-AxxV 8M X 72 Bits 64MB DRAM 168-Pin DIMM with EDO, ECC, and Buffers FEATURES • • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC tHPC SL…-A50V 50ns 18ns 90ns 25ns SL…-A60V 60ns 20ns 110ns 30ns EDO Mode operation


    Original     		PDF SL72B4B8M2F-AxxV 168-Pin -A50V -A60V 110ns cycles/32ms SL72B4B8M2F-AxxV 24-pin 300-mil DQ36-39 A1-A10

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C


    Original     		PDF M53640812CW0/CB0 M53640812CW0/CB0 M53640812C 8Mx36bits M53640812C 24-pin 28-pin 72-pin M53640812CW0

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		PDF HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024

    KVR8X72V84-50EG

    Abstract: No abstract text available
    Text: Memory Module Specification KVR8X72V84-50EG EDO Memory Module DESCRIPTION: This document describes ValueRAM's 8M x 72-bit 64MB 168-Pin DIMM (Dual In-line Memory Module). The components on this module include nine EDO (Extended Data Output) 8M x 8-bit DRAM (4K Refresh) in TSOP packages and two 16-bit drivers in SSOP packages. This 50ns


    Original     		PDF KVR8X72V84-50EG 72-bit 168-Pin 16-bit 000ns VALUERAM0101-001 KVR8X72V84-50EG

    64mb edo dram simm

    Abstract: K4E160411C
    Text: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C


    Original     		PDF M53640412CW0/CB0 M53640412CW0/CB0 M53640412C 4Mx36bits M53640412C 24-pin 28-pin 72-pin M53640412CW0 64mb edo dram simm K4E160411C

    Flash

    Abstract: 8MB SDRAM "NOR Flash" 4MB "Serial NOR Flash" 16Mb SDRAM 32MB SDRAM 8MX16 EDO sdram Mobile SDRAM 4Mx16 flash
    Text: Product Selection Guide of ESMT KGD DRAM Updated Date : 11/07/2006 Density Organization Description 4Mb 256Kb*16 Refresh Speed ns Pad coordinates MP EDO DRAM 5V 512 EDO DRAM 3.3V 512 25/35 2 Edge pads Now 35 2 Edge pads Now SDRAM Density Organization Description


    Original     		PDF 256Kb 128Mb 1Mx16/2Mx8 2Mx16/4Mx8 Flash 8MB SDRAM "NOR Flash" 4MB "Serial NOR Flash" 16Mb SDRAM 32MB SDRAM 8MX16 EDO sdram Mobile SDRAM 4Mx16 flash

    HYB3164(5)805AJ

    Abstract: P-SOJ-32-1 TSOP-32
    Text: 8M x 8-Bit Dynamic RAM HYB 3164805AJ/AT L -40/-50/-60 HYB 3165805AJ/AT(L) -40/-50/-60 (4k & 8k Refresh, EDO-Version) Advanced Information • 8 388 608 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation


    Original     		PDF 3164805AJ/AT 3165805AJ/AT HYB3164 805AJ/AT P-SOJ-32-1 P-TSOPII-32-1 HYB3164(5)805AJ P-SOJ-32-1 TSOP-32

    MEM4X16E43VTW-5

    Abstract: NS4249 MEM4X16E4 MEM4X16E43VTW5
    Text: 4 MEG x 16 EDO DRAM EDO DRAM 4X16E43V FEATURES PIN ASSIGNMENT Top View • Single +3.3V ±0.3V power supply • Industry-standard x16 pinout, timing, functions, and package • 12 row, 10 column addresses (4) 13 row, 9 column addresses (8) • High-performance CMOS silicon-gate process


    Original     		PDF 4X16E43V 096-cycle 50-Pin MEM4X16E43VTW-5 NS4249 MEM4X16E4 MEM4X16E43VTW5

    P-SOJ-32-1

    Abstract: TSOP-32
    Text: 8M x 8-Bit Dynamic RAM HYB 3164805AJ/AT L -40/-50/-60 HYB 3165805AJ/AT(L) -40/-50/-60 (4k & 8k Refresh, EDO-version) Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation


    Original     		PDF 3164805AJ/AT 3165805AJ/AT HYB3164 805AJ/AT P-SOJ-32-1 P-TSOPII-32-1 P-SOJ-32-1 TSOP-32

    IS41LV16400

    Abstract: 32A11A1
    Text: ISSI IS41LV16400 4M x 16 64-MBIT DYNAMIC RAM WITH EDO PAGE MODE NOVEMBER 1999 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called


    Original     		PDF IS41LV16400 64-MBIT) IS41LV16400 16-bit 6400-50T IS41LV16400-60T 400-mil 32A11A1

    IS41LV16400

    Abstract: No abstract text available
    Text: ISSI IS41LV16400 4M x 16 64-MBIT DYNAMIC RAM WITH EDO PAGE MODE AUGUST 2001 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle The ISSI IS41LV16400 is 4,194,304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called


    Original     		PDF IS41LV16400 64-MBIT) IS41LV16400 16-bit IS41LV16400-50T IS41LV16400-60T

    PD4264805G5-A60-7JD

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT juPD42S64805,4264805,42S65805,4265805 64M-BIT DYNAMIC RAM 8 M-WORD BY 8-BIT, EDO Description The /iPD42S64805, 4264805, 42S65805, 4265805 are 8,388,608 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


    OCR Scan     		PDF uPD42S64805 uPD4264805 uPD42S65805 uPD4265805 64M-BIT /iPD42S64805, 42S65805, //PD42S64805, 42S65805 32-pin PD4264805G5-A60-7JD

    Untitled

    Abstract: No abstract text available
    Text: cP October 1996 Revision 1.0 ~ DATA SHEET - EDC8UV724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC8UV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module


    OCR Scan     		PDF EDC8UV724 64MByte 64-megabyte 168-pins, MB81V1

    Untitled

    Abstract: No abstract text available
    Text: cP October 1996 Revision 1.0 FUJI' DATA SHEET - * EDC8U V724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC8UV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module


    OCR Scan     		PDF 64MByte EDC8UV724 64-megabyte 168-pins,

    Untitled

    Abstract: No abstract text available
    Text: November 1996 Revision 1.0 DATA S H E E T FUJITSU - EDC8B V724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC8BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module


    OCR Scan     		PDF 64MByte EDC8BV724 64-megabyte 168-pins, MB81V1 74LVT16244 168-pin

    Untitled

    Abstract: No abstract text available
    Text: November 1996 Revision 1.0 FUJITSU DATA SHEET - EDC8B V724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC8BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module


    OCR Scan     		PDF 64MByte EDC8BV724 64-megabyte 168-pins, MB81V1 74LVT16244

    fujitsu power supply

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC8B V724 2I4 B-60(JIT)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC8BV724(2/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module orga­


    OCR Scan     		PDF 64MByte EDC8BV724 64-megabyte 168-pins, MB81V1 405B-60 74LVT16244 fujitsu power supply

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC8UV724 2/4 B-60(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3 V (ECC) General Description The EDC8UV724(2/4)B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module orga­


    OCR Scan     		PDF EDC8UV724 64MByte 64-megabyte 168-pin, MB81V1 405B-60 1Mx16,

    3165805AT-60

    Abstract: No abstract text available
    Text: 8M x 8-Bit Dynamic RAM HYB 3164805AJ/AT L -40/-50/-60 HYB 3165805AJ/AT(L) -40/-50/-60 (4k & 8k Refresh, EDO-Version) Advanced Information • 8 388 608 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation


    OCR Scan     		PDF 3164805AJ/AT 3165805AJ/AT HYB3164 3165805AT-60

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 8M x 8-Bit Dynamic RAM HYB 3164805AJ/AT L -40/-50/-60 (4k & 8k Refresh, EDO-Version) HYB 3165805AJ/AT(L) -40/-50/-60 Advanced Information • 8 388 608 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation


    OCR Scan     		PDF 3164805AJ/AT 3165805AJ/AT P-TSOPII-32-1

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS 4 1 L V 1 6 4 0 0 4M x 16 64-MBIT DYNAMIC RAM WITH EDO PAGE MODE ADVANCE INFORMATION JULY 1999 DESCRIPTION FEATURES The ISSI IS41LV16400 is 4,194304 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page


    OCR Scan     		PDF 64-MBIT) IS41LV16400 16-bit IS41LV16400-50KE IS41LV16400-50TE IS41LV16400-60KE IS41LV16400-60TE 400-mil

    MS12R

    Abstract: No abstract text available
    Text: 16M x 4-Bit Dynamic RAM . o, r, x . HY b 3164405AJ/AT L -40/-50/-60 HYB 3165405AJ/ATÌL) -40/-50/-60 v ' ^ (4k & 8k Refresh, EDO-Version) Advanced Information • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation


    OCR Scan     		PDF 3164405AJ/AT 3165405AJ/AT HYB3164 P-TSOPII-32-1 MS12R