J200M
Abstract: No abstract text available
Text: ^EDI ED I784M SV ELECIRONCDE9GIS&NC 4Megx8NAND Flash PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic Features The I784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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I784M
EDI784MSV
EDI784MSV50BB
EDI784MSV50FB
EDf784MSV50BB
EDI784MSV50BC
EDI784MSV50BI
050TYP.
EDI784MSV
J200M
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9CTI
Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Text: I784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The I784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density
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ED1784MS
250ns
EDI784MSV
EDI784MSV50BB
EDI784MSV50FB
EDI784MSV50B8
EDI784MSV506C
24/32Pin
300MN
3530im
9CTI
S28B
9CTI 10 pin ic
EC017
EDJ7
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Untitled
Abstract: No abstract text available
Text: ^EDI I784MSV-RP ELECTRONIC DESIGNS. INC 4Megx8 Ruggedized Plastic NAND Flash 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The I784MSV is a 4M 4,194,304 x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high
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EDI784MSV-RP
EDI784MSV
528-byte
I784M
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LH Research
Abstract: LH Research mm EDI784MSV50BB EDI784MSV50BC
Text: ^EDI EDI788MS V 8Megx8 NAND Flash ELECTRONIC DESIGNS, INC ADVANCED 8Mx8 Bit NAND Flash CMOS, Monolithic {Features T h e E D I788M S V is a 8 M 8 ,38 8 ,6 0 8 x8 b it N A N D Flash • S ing le 3.3 - V o lt S u p ply cell provid e s the m ost cost-effective so lution fo r high d ensity
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250ns
EDI784MSV50BI
EDI784MSV50BM
24/32Pin
EDI788MSV
7/96ECO
LH Research
LH Research mm
EDI784MSV50BB
EDI784MSV50BC
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