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    EDI441024C Search Results

    EDI441024C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    EDI441024C White Microelectronics + 5V (±10%),1M x 4 dynamic RAM CMOS, monolithic Scan PDF

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    EDI441024C

    Abstract: A517 transistor a6 s a213c
    Text: EDI441024C ^EDI E lectro de D*algns I n c ^ 1Mx4 Dynamic RAM CMOS, Monolithic High Performance Four Megabit Monolithic DRAM The EDI441024C is a fast page mode4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process,


    OCR Scan     		PDF EDI441024C EDI441024C mode4096K 1024Kx4. A517 transistor a6 s a213c

    DCH3

    Abstract: EDI441024C ca011 a719
    Text: ELECTRONIC DESIGNS INC ^SEDI St»elrecle D M lg n t In c i 3QE ]> 11 ' ' ' • 1 The EDI441024C is a fast page mode 4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process, combined with silicide technology and a single transistor


    OCR Scan     		PDF ED1441024C EDI441024C 4096K 1024Kx4. DCH3 ca011 a719

    EDI441024C

    Abstract: a517
    Text: moi EDI441024C Electrode D *«lgni Inop High Performance Four Megabit Monolithic DRAM 1Mx4 Dynamic RAM CMOS, Monolithic The EDI441024C is a fast page mode 4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process,


    OCR Scan     		PDF EDI441024C EDI441024C mode4096K 1024Kx4. a517

    Untitled

    Abstract: No abstract text available
    Text: WSX EDI441024C afCTROMC 0E9GNSINC. 1Megx4 Fast Page DRAM 1Megabit x 4 Dynamic RAM 5V, Fast Page Features The EDI441024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x 4. 1 Meg x 4 bit CMOS Dynamic During READ and WRITE cycles each bit is addressed through 20


    OCR Scan     		PDF 100ns EDI441024C EDI441024C 015B1USA* ED144W24C

    1Mx4 Dynamic RAM

    Abstract: transistor A7 ED1441024C
    Text: _ EDI441024C ^EDI Electronic D««igna Inep High Performance Four Megabit Monolithic DRAM 1Mx4 Dynamic RAM CMOS, Monolithic The EDI441024C is a fast page mode 4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process,


    OCR Scan     		PDF EDI441024C 150ns EDI441024C 4096K 1024Kx4. ED1441024C 1Mx4 Dynamic RAM transistor A7

    EDI441024C

    Abstract: No abstract text available
    Text: W 3X EDI441024C 1Megx4Fast Page DRAM ELECTRONIC.DESIGNS, INC. 1Megabitx 4 Dynamic RAM 5 V,FastPage The E DI441024C isa high performance, la/v power CMO S Dynamic I Features RAM organized as 1 Megabit x 4. 1 M egx4bitC M 0SD ynam ic address bits which are entered 10 at a time A0-A9 . RAS\ is used


    OCR Scan     		PDF EDI441024C DI441024C 20Pin 24/28Pki 1581U EDI441024C

    Untitled

    Abstract: No abstract text available
    Text: moi EDI441024C E le ctrod e D e sig ni I n o ^ High Performance Four Megabit Monolithic DRAM 1Mx4 Dynamic RAM CMOS, Monolithic The EDI441024C is a fast page mode 4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process,


    OCR Scan     		PDF EDI441024C EDI441024C 4096K 1024Kx4. 150ns

    Untitled

    Abstract: No abstract text available
    Text: ^EDL EDI441024C 1Megx4 Fast Page DRAM ELECTRONIC DESIGNS, INC 1 Megabit x 4 Dynamic RAM 5V, Fast Page The EDI441024C is a high performance, low power CMOS Dynamic Features RAM organized as 1 Megabit x 4. 1 Meg x 4 bit CMOS Dynamic During READ and WRITE cycles each bit is addressed through 20


    OCR Scan     		PDF EDI441024C EDI441024C 100ns 24/28Pin 1441024C

    Untitled

    Abstract: No abstract text available
    Text: EDI441024C ^EDI Electronic Designs Inc. High Performance Four Megabit Monolithic DRAM 1 Megabit x 4 Dynamic RAM CMOS, Monolithic Features The EDI441024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x 4. During READ and WRITE cycles each bit is ad­


    OCR Scan     		PDF 100ns EDI441024C EDI441024C EDI441024C80LZB EDI441024C80LZM EDI441024C80LZI ED1441024C1OOLZI EDI441024C100LZB EDI441024C100LZM

    EDI441024C

    Abstract: EDI441024C100LZB EDI441024C70BB EDI441024C70LZB EDI441024C70LZI EDI441024C80BB EDI441024C80LZB
    Text: ^EDI E D I4 4 1 0 2 4 C 1Megx4 Fast Page DRAM ELECTRONIC DESIGNS, INC 1 Megabit x 4 Dynamic RAM 5V, Fast Page The EDI441024C is a high performance, low power CMOS Dynamic Features RAM organized as 1 Megabit x 4. 1 Meg x 4 bit CMOS Dynamic address bits which are entered 10 at a time A0-A9 . RAS\ is used


    OCR Scan     		PDF EDI441024C 100ns EDI441024C 24/28Pin 01581USA ECOI8341 EDI441024C100LZB EDI441024C70BB EDI441024C70LZB EDI441024C70LZI EDI441024C80BB EDI441024C80LZB

    Untitled

    Abstract: No abstract text available
    Text: ^EDI ELECTPOWC MSGNS NC. | INSIDE SECTION 3 . Density 1 Megabit 1 Megabit 1 Megabit 1 Megabit 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 16 Megabits 16 Megabits 18 Megabits 16 Megabits Organization IM xl IM xl 1Mx1 1Mx1 1Mx4 1Mx4 1Mx4


    OCR Scan     		PDF BH411024C-ZB EDI411024C-NB EDI411024C-FB EDI411024C-QB EDI441024C-LZB EDI441024C-BB EDI441024C-FB EDI414097C-LZB E0W14Q97C-BB EDI414087C-FB

    EDI8M8512L

    Abstract: No abstract text available
    Text: ^EDI Packaging Cross Reference Electronic Designs Inc. by Part Number No. Pins 31 40 31 40 26 52 TBD 36 TBD 36 TBD TBD TBD TBD 26 52 26 52 25 28 27 32 25 28 27 32 78 20 16 20/26 1 18 18 20 16 20/26 18 20 16 2026 18 20 16 20/26 4 20 18 20 13 28 76 28 22 28


    OCR Scan     		PDF EDH816H64CX2 EDI88128PXXNM EDI88130CSXXNB 188130LPSXXNB EDI88130PSXXNB 188128CXXLB EDI88128CXXLM EDI88128LPXXLB EDI88128LPXXLM EDI88128PXXLB EDI8M8512L

    dram zip 256kx16

    Abstract: I8833C
    Text: Electronic Design* Inc. Table of Contents Page Letter from the Table o f Contents . 2


    OCR Scan     		PDF

    64kx4 DRAM

    Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
    Text: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power, 262,144bit C M O S Static R A M orga­ 32Kx8 bit C M O S Static


    OCR Scan     		PDF EDI8833C/LP/P 32Kx8 EDI8833C/LP/P 144bit 32Kx8. MIL-STD-883, 64Kx4 EDI8466CB. 256Kx1 EDI81256C/LP/P. 64kx4 DRAM SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256

    synchronous sram

    Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
    Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK


    OCR Scan     		PDF EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C synchronous sram 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832

    EDI44256C

    Abstract: No abstract text available
    Text: ^EDI Dynamic RAM Selector Guide Electronic D u lg n s Inc. The Industry’s Fastest High Density MIL-STD-883, Paragraph 1.2.1 Compliant Dynamic RAMs In response to the need of our military customers for high-performance, M IL-S TD 883 compliant DRAM s, Electronic Designs


    OCR Scan     		PDF MIL-STD-883, 256Kx4 EDI44256CXXNB EDI44256CXXQB EDI44256CXXZB EDI411024CXXFB EDI411024CXXNB EDI411024CXXQB EDI44256C