EDI414096C Search Results

EDI414096C Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EDI414096C		White Microelectronics	+ 5V (±10%),4M x 1 dynamic RAM CMOS, monolithic		Scan	PDF

EDI414096C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: moi _ EDI414096C Electronic Detigns me. High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide	OCR Scan	EDI414096C EDI414096C A0A10	PDF
CA211 Abstract: EDI414096C 4Mx1 Text: _ EDI414096C ^EDI High Performance Four Megabit Monolithic DRAM Ei#ctronks Design* Inc. 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide	OCR Scan	EDI414096C EDI414096C -A109- A0-A10 CA211 4Mx1	PDF
1213C Abstract: 4Mx1 Text: É3EDI EDI414096C Electronic Designs Inc. • High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic DMFOMM’IO i Features The EDI414096C is a high performance, low power C M O S Dynamic RA M organized a s 4Megabits x1. The use of four-layer poly process, combined with silicide	OCR Scan	EDI414096C EDI414096C A0A10 1213C 4Mx1	PDF
4Mx1 Abstract: CA211 EDI414096C a719 A109 amplifier Text: ^EDI _ 4Mx1 Dynamic RAM CMOS, Monolithic The EDI414096C is a high performance, low power CMOS Dynamic RAM organized as 4Megabits x1. The use of four-layer poly process, combined with silicide technology and a single transistor dynamic storage cell,	OCR Scan	EDI414096C EDI414096C A109- 4Mx1 CA211 a719 A109 amplifier	PDF
EDI8M8512L Abstract: No abstract text available Text: ^EDI Packaging Cross Reference Electronic Designs Inc. by Part Number No. Pins 31 40 31 40 26 52 TBD 36 TBD 36 TBD TBD TBD TBD 26 52 26 52 25 28 27 32 25 28 27 32 78 20 16 20/26 1 18 18 20 16 20/26 18 20 16 2026 18 20 16 20/26 4 20 18 20 13 28 76 28 22 28	OCR Scan	EDH816H64CX2 EDI88128PXXNM EDI88130CSXXNB 188130LPSXXNB EDI88130PSXXNB 188128CXXLB EDI88128CXXLM EDI88128LPXXLB EDI88128LPXXLM EDI88128PXXLB EDI8M8512L	PDF
64kx4 DRAM Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256 Text: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform ance, low power, 262,144bit C M O S Static R A M orga 32Kx8 bit C M O S Static	OCR Scan	EDI8833C/LP/P 32Kx8 EDI8833C/LP/P 144bit 32Kx8. MIL-STD-883, 64Kx4 EDI8466CB. 256Kx1 EDI81256C/LP/P. 64kx4 DRAM SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256	PDF
synchronous sram Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832 Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK	OCR Scan	EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C synchronous sram 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832	PDF
EDI44256C Abstract: No abstract text available Text: ^EDI Dynamic RAM Selector Guide Electronic D u lg n s Inc. The Industry’s Fastest High Density MIL-STD-883, Paragraph 1.2.1 Compliant Dynamic RAMs In response to the need of our military customers for high-performance, M IL-S TD 883 compliant DRAM s, Electronic Designs	OCR Scan	MIL-STD-883, 256Kx4 EDI44256CXXNB EDI44256CXXQB EDI44256CXXZB EDI411024CXXFB EDI411024CXXNB EDI411024CXXQB EDI44256C	PDF