ED 66 diode
Abstract: No abstract text available
Text: SKKD 40F, SKMD 40F power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module SEMIPACK 1 12 122 1 :66 &66 ;66 1 :66 &66 ;66 .32 4 556 - 78 +
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Direct Digital Synthesis
Abstract: Sample Rate Converters
Text: Detailed Shortform Amplifiers Page 75 76 Page 74 Differential Line Drivers & Receivers, Preamps, Microphone Preamps See analog & digital audio Page 50 High Speed: Buffers Page 50 High Speed: Clamp Amps Page 50 High Speed: Photo Diode Pre-Amp Page 47 Page
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REV-10
Direct Digital Synthesis
Sample Rate Converters
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1N4775
Abstract: 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4784A
Text: • 8.5 VOLT NOMINAL ZENER VOLTAGE + 5% • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 1N4775 thru 1N4784A • LOW CURRENT RANGE: 0.5 AND 1.0 mA • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +175°C
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1N4775
1N4784A
500mW
1N4775
1N4775A
1N4776
1N4776A
1N4777
1N4777A
1N4778
1N4778A
1N4779
1N4784A
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C200
Abstract: BZV58
Text: BZV58 C10.BZV58 C200 5W 3 ; + 9 : Absolute Maximum Ratings Symbol Conditions Axial lead diode : 9 3= ; + + 2 &% > ' 8 : 9 ? 1 2 @ = A 4 + BC2 @ 3
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BZV58
C200
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D9K DIODE
Abstract: diode JD e6e1 DIODE K9 JD ELECTRONICS k9 diode DIODE 19 9
Text: BZV58 C10.BZV58 C200 5W power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter 3 ; + 9 : Absolute Maximum Ratings Symbol Conditions Axial lead diode : 9 3= ; +
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BZV58
D9K DIODE
diode JD
e6e1
DIODE K9
JD ELECTRONICS
k9 diode
DIODE 19 9
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Untitled
Abstract: No abstract text available
Text: BZV58 C10.BZV58 C200 5W 3 ; + 9 : Absolute Maximum Ratings Symbol Conditions Axial lead diode : 9 3= ; + + 2 &% > ' 8 : 9 ? 1 2 @ = A 4 + BC2 @ 3
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BZV58
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DIODE ED 11
Abstract: No abstract text available
Text: Obsolete Product - not recommended for new design MXP7002 I N T E G R A T E D P R O D U C T S 3.125 Gbps GaAs PIN Photo Diode P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION 100µm aperture Semi-insulating substrate High Responsivity Low Dark Current High Bandwidth
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MXP7002
DIODE ED 11
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68W SOT
Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
Text: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua
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B132-H7456-GI-X-7600
68W SOT
ultra low noise 12GHz
64W SOT23
AUs SOT363
BAS 40-04 Infineon
BAS 68-04
BAT 43 - 46 - 85 - 86
61 SIEMENS
DIODE BAT 19
SOT143 DUAL DIODE
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LTC4098-3.6
Abstract: SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals
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FF400R12KE3
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
LTC4098-3.6
SXA-01GW-P0.6
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br - b2d
Abstract: br b2d
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
br - b2d
br b2d
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zenner
Abstract: CDLL4775 CDLL4775A CDLL4776 CDLL4776A CDLL4777 CDLL4777A CDLL4778 CDLL4778A CDLL4779
Text: • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES CDLL4775 thru • LEADLESS PACKAGE FOR SURFACE MOUNT • 8.5 VOLT NOMINAL ZENER VOLTAGE + 5% CDLL4784A • LOW CURRENT RANGE: 0.5 TO 1.0 mA • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS
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CDLL4775
CDLL4784A
500mW
zenner
CDLL4775
CDLL4775A
CDLL4776
CDLL4776A
CDLL4777
CDLL4777A
CDLL4778
CDLL4778A
CDLL4779
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Untitled
Abstract: No abstract text available
Text: • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES CDLL4775 thru • LEADLESS PACKAGE FOR SURFACE MOUNT • 8.5 VOLT NOMINAL ZENER VOLTAGE +5% CDLL4784A • LOW CURRENT RANGE: 0.5 TO 1.0 mA • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS
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CDLL4775
CDLL4784A
500mW
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MCT4R
Abstract: c950 mil-std-883* lead fatigue centrifuge phototransistor four-lead 88D marking
Text: GENL INSTR-. D T - < / /- £ 3 R eli a b il it y ^ c o n d itio n ed *. ERMETIC PHOTOTRANSISTOR & | ^ ^ g c ^ p pj 0C0UPLER :| ENERALas I Ifg lM M S IIB •fisa ; -,“ D E | 36=10126 □□03D0S 7 66 OPTOE L EK * -r j MCT4R DESCRIPTION PACKAGE DIMENSIONS
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000300S
Mll-STD-883
MIL-STD-883C
MCT4R
c950
mil-std-883* lead fatigue
centrifuge
phototransistor four-lead
88D marking
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U309
Abstract: marconi company marconi U3090
Text: i m U309 APRIL, BOOSTER DIODE 0*3A IN D IR E C T L Y H EA T ED 19S2 BASE C O N N E C T IO N S A N D V A LV E D IM EN SIO N S Base : B9A Bulb : Tubular Overall length : 72—78 Seated length : 66—72 Max. diameter : 22 mm. mm. mm. View from underside of base.
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10z6.2t5
Abstract: 29712C 10Z3.6T5 29707H 10Z4.3T5 5ZS11B 5ZS12B 5ZS13B 5ZS14B 5ZS15B
Text: International Rectifier Semiconductors Zener Diodes REFERENCE TA B LE 5 W a tt* at 75*C lead tem perature -5 % tolerance c o ntinu ed Z zt at Type Stock No. Min. v 2a t I zt Nom. Max. IzT mA 5ZS11B 5ZS12B 5ZS13B 5ZS14B 5ZS15B 29689B 29690E 29691C 29692A
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5ZS11B
29689B
5ZS12B
29690E
5ZS13B
29691C
5ZS14B
9692A
5ZS15B
29693X
10z6.2t5
29712C
10Z3.6T5
29707H
10Z4.3T5
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J476
Abstract: 2EZ100D
Text: Zener Regulator Diodes S M A J4761C SM A J4761D 2EZ82D 5 S M A J4762 SM A J4762A S M A J4762C SM A J4762D 2EZ91D 5 S M A J4763 SM A J4763A S M A J4763C S M A J4763D 2EZ100D 5 S M A J4764 S M A J4764A S M A J4764C SM A J4764D 2EZ110D 5 2EZ120D 5 2EZ130D 5 2EZ140D 5
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J4761C
J4761D
2EZ82D
J4762
J4762A
J4762C
J4762D
2EZ91D
J4763
J4763A
J476
2EZ100D
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Relay cf 318 9.0
Abstract: Relay cf 318 ez 741 DM 311 BG 215CN DM 311 BG 35 AB 314a 741 CN 211-DA msta
Text: ASEA Catalogue RK 74-10 E E d itio n 1 February 1£¡73 F ija R, P art 1 Component block type RTXE [c|ô|mTbI with diodes, thermistors or resistors • * * * * Requires no extra space To be mounted at the rear o f the relay terminal base The encapsulated block hermetically
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minimelf marking
Abstract: TMM4567A bo 139 TMM4565 TMM4566 TMM4566A TMM4567 TMM4568 TMM4568A TMM4569
Text: SbE I • 7 '5 2 S 2 3 7 SCS-THOMSON OD4 1 b lO 111 « S 6 TH TMM4565, A ^TM M 4569, A TMM4575, A ^TM M 4579, A IL E O T « ! G S-THONSON T - /h O *f TEMPERATURE COMPENSATED ZENER DIODES NEW SERIE ABSOLUTE RATINGS limiting values Symbol P aram eter Pt o t
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TMM4565,
TMM4569,
TMM4575,
TMM4579,
TMM4565
7T21237
TMM4569.
/TMM4575.
minimelf marking
TMM4567A
bo 139
TMM4566
TMM4566A
TMM4567
TMM4568
TMM4568A
TMM4569
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1N4474
Abstract: 4661N 1N1492 1N44B 1N4460 1N4471 1N4479
Text: 1N 4460 thru 1N4496 and 1N6485 thru 1N6491 Microisemi Corp. $ The diQite SC O TTSD A LE , A Z ☆JANS* 1.5 WATT G LASS ZEN ER DIODES FEATURES • Microminiature package. • High perform ance characteristics. • Stable operation at temperatures to 200°C.
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1N4496
1N6485
1N6491
MIL-S-19500/406.
1N4460
1N4474
4661N
1N1492
1N44B
1N4471
1N4479
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Untitled
Abstract: No abstract text available
Text: Generic Optoisolator Specifications_ GEPS2001 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor M IN . M AX. .040 .090 085 012 203 2 64 INFRARED E M ITTIN G DIODE 9 53 3.43 6 66 2.92 6.10 milliwatts milliamps ampere
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GEPS2001
GEPS2001
H51868
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8533 zener
Abstract: v regulator 7509 Zener 3139
Text: Zener Regulator Diodes Part Number ZEN UZ5880 1N5124 UZ4782 1N5375A 1N5375B SMBG5375B SMBJ5375B 1N4980 1N4980US JAN1N4980 JAN1N4980US JANS1N4980 JANS1N4980US JANTX1N4980 JANTX1N4980US JANTXV1N4980 JANTXV1N4980US 1N5376A 1N5376B SMBGS376B SMBJ5376B UZ5790 UZ5890
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ZEN-126
8533 zener
v regulator 7509
Zener 3139
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zener diodes 1N serie
Abstract: 1N4784
Text: ^ SCS-THOMSON [» « iO T Q K S 1N 4 7 7 5 , 1 N 4784,A TEMPERATURE COMPENSATED ZENER DIODES NEW SERIE • SEMICONDUCTOR MATERIAL : SILICON . TECHNOLOGY : LOCAL EPITAXY + GUARD RING y :' x DO 35 Glass A B S O L U T E R A T I N G S (lim iting values) P tot
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zener diode JEDEC 1N
Abstract: 1N 4784A
Text: 1N4775 thru 1N4784A Mierèsemi Corp. ? 7fie tfwtfe experts SANTA ANA, CA SCOTTSDALE, A Z F o r m o re in fo rm a tio n call: 6 0 2 941-6300 FEATU R ES 8.5 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • ZEN EH VOLTAGE 6.5V + 5% [See Note 4) • TEM PER A TU R E CO EFFICIEN T RANGE: 0.01 % / °C TO 0 .0 0 0 5 % /°C
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1N4775
1N4784A
RH4784A.
zener diode JEDEC 1N
1N 4784A
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Untitled
Abstract: No abstract text available
Text: 1N4775 thru Micmemi Corp. f SANTA A N A , CA Ttwóioóe experts 1N4784A SC O T T SD A L E , A Z For more information call: / 602 M i-6 3 0 0 FEATURES • ZENER VOLTAGE 8.5V ± 5% (See Note 4) 8.5 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • TEMPERATURE COEFFICIENT RANGE: 0.0l% /°C TO 0.0005%/°C
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1N4775
1N4784A
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