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    FPD1500SOT89

    Abstract: FPD2250SOT89 FPD2250SOT89CE MIL-HDBK-263 FPD2250SOT FPD2250
    Text: FPD2250SOT89CE FPD2250SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency


    Original     		PDF FPD2250SOT89CE FPD2250SOT8 FPD2250SOT89CE: 31dBm 44dBm FPD2250SOT89CE 25mx1500m EB2250SOT89CE-BC FPD2250SOT89CECE FPD1500SOT89 FPD2250SOT89 MIL-HDBK-263 FPD2250SOT FPD2250

    FPD1500SOT89

    Abstract: FPD2250SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures
    Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency


    Original     		PDF FPD2250SOT89 FPD2250SOT8 FPD2250SOT89E: 31dBm 44dBm FPD2250SOT89 25mx1500m FPD2250SOT89E EB2250SOT89CE EB2250SOT89CE-BC FPD1500SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures