arcotronics
Abstract: arcotronics capacitors Arcotronics aluminium electrolytic capacitors 200 EAS107M050AL3AA arcotronics 12,5 arcotronics 12.5 arcotronics 1,4 ac capacitors ARCOTRONICS 12.5 capacitor
Text: ARCOTRONICS EAS Aluminium Electrolytic Capacitors SINGLE-ENDED LEADS – High temperature 125°C / 3000- 5000 h Description Long life 3000-5000 hours and high reliability. Marking Arcotronics’logo series EAS , operating temperature (125°C), capacitance (µF),
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EAS226M035AG3AA
EAS336M035AH1AA
EAS476M035AH2AA
EAS107M035AH4AA
EAS227M035AL4AA
EAS337M035AM5AA
EAS474M050AG3AA
EAS105M050AG3AA
EAS225M050AG3AA
EAS335M050AG3AA
arcotronics
arcotronics capacitors
Arcotronics aluminium electrolytic capacitors 200
EAS107M050AL3AA
arcotronics 12,5
arcotronics 12.5
arcotronics 1,4 ac capacitors
ARCOTRONICS 12.5 capacitor
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SMB MARKING mj
Abstract: tt110c B140B B140BT-01
Text: SPECIAL CUSTOMER PARTS SPECIFICATION SHEET 1. Part information Part Number: Description: Outline: Marking: Package: Issue date: Series No.: Cust. code.: Cust. dwg#: Rev. Level: B140BT-01 Special IFSM, VF, IR, EAS, IAR, Cj, Dim. A, H SMB Cathode band + LT logo + D/C + B140B
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B140BT-01
B140B
P746A
371S0054
190mH
100kHz,
SMB MARKING mj
tt110c
B140B
B140BT-01
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Untitled
Abstract: No abstract text available
Text: Ceramic Substrate Trimmer Potentiometers/EVME२ 6 mm Square Dustproof Ceramic Trimmer Potentiometers Cermet, Radial Taping, with Knob Protection Type: EVMEAS/EVMEGS/EVMEES EAS EES • Features EGS ■ Recommended Applications ● High reliability due to cermet element
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C5260-1
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AN97080
Abstract: ISO7816-3 ISO7816-4 TDA8006 apdu
Text: APPLICATION NOTE EASY SOFTWARE DEVELOPMENT FOR TDA8006 Preliminary Library Reference Releas e 1. 3 AN/97080 C51 KEIL Compiler Philips Semiconductors EAS Y S OFTWARE DEVELOPMENT FOR TDA8006 Preli mi nary Li brary Reference APPLICATION NOTE EASY SOFTWARE DEVELOPMENT
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TDA8006
AN/97080
ISO7816-3,
ISO7816-4
AN97080
ISO7816-3
ISO7816-4
TDA8006
apdu
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Untitled
Abstract: No abstract text available
Text: STGB20N40LZ, STGD20N40LZ Automotive 390 V internally clamped IGBT EAS 300 mJ Datasheet - preliminary data Features • Designed for automotive applications • ESD gate-emitter protection TAB • Gate-collector high voltage clamping TAB • Logic level gate drive
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STGB20N40LZ,
STGD20N40LZ
DocID024251
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Untitled
Abstract: No abstract text available
Text: STGB20N40LZ, STGD20N40LZ Automotive-grade 390 V internally clamped IGBT EAS 300 mJ Datasheet - production data Features • Designed for automotive applications and AEQ-Q101 qualified TAB • ESD gate-emitter protection TAB • Gate-collector high voltage clamping
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STGB20N40LZ,
STGD20N40LZ
AEQ-Q101
DocID024251
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ss2ph10
Abstract: No abstract text available
Text: SS2PH9 & SS2PH10 New Product Vishay General Semiconductor High-Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for improved high temperature performance Major Ratings and Characteristics IF AV VRRM IFSM EAS VF IR Tj max. 2.0 A 90 V, 100 V
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SS2PH10
DO-220AA
J-STD-020C
2002/95/EC
2002/96/EC
08-Apr-05
ss2ph10
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Untitled
Abstract: No abstract text available
Text: STGB35N35LZ STGP35N35LZ Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ Datasheet - production data Features TAB • Designed for automotive applications and AEC-Q101 qualified TAB • Low threshold voltage 3 1 D²PAK • Low on-voltage drop TAB
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STGB35N35LZ
STGP35N35LZ
AEC-Q101
O-220
DocID12253
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PDF
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Untitled
Abstract: No abstract text available
Text: Ceramic Substrate Trimmer Potentiometers/EVME 6 mm Square Dustproof Ceramic Trimmer Potentiometers Cermet, Radial Taping, with Knob Protection Type: EVMEAS/EVMEGS/EVMEES EAS EES n Features l High reliability realized by cermet element l No readjustment needed through knob protected
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Untitled
Abstract: No abstract text available
Text: POW ER Y TO US EAS E BL E Advanced Multi-GNSS Simulator FUTURE PROOF L FU GSG-6 Series AFF O R D A Upgradable to all constellations and signals • Multi-GNSS, Multi-Frequency Simulator • GPS standard, new L2C, L5 GLONASS, Galileo, and BeiDou • Simultaneous multi-frequency P-code
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MIL-PRF-28800F,
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SS2P6E3
Abstract: No abstract text available
Text: SS2P5 & SS2P6 New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier Major Ratings and Characteristics IF AV 2A VRRM 50 V, 60 V IFSM 50 A EAS 11.25 mJ VF 0.54 V Tj max. 150 °C DO-220AA (SMP) Features Mechanical Data
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DO-220AA
J-STD-020C
2002/95/EC
2002/96/EC
J-STD-002B
JESD22-B102D
08-Apr-05
SS2P6E3
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ss3p4
Abstract: SS3P4-E3/84A
Text: SS3P4 New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier Major Ratings and Characteristics IF AV 3A VRRM 40 V IFSM 50 A EAS 11.25 mJ VF 0.50 V Tj max. 150 °C DO-220AA (SMP) Features Mechanical Data • • •
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DO-220AA
J-STD-020C
2002/95/EC
2002/96/EC
J-STD-002B
JESD22-B102D
08-Apr-05
ss3p4
SS3P4-E3/84A
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035H
Abstract: IRFPE30 diode code ae
Text: PD- 95502 IRFP048RPbF Lead-Free Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Max. ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 52 IDM 290 Pulsed Drain Current PD @TC = 25°C Power Dissipation VGS EAS Units
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IRFP048RPbF
12-Mar-07
035H
IRFPE30
diode code ae
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B1 6 zener
Abstract: GP35N35LZ 624 Marking Code ST IGBT code marking IC120 STGB35N35LZ STGB35N35LZ-1 STGB35N35LZT4
Text: STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V internally clamped IGBT Features TAB • Low threshold voltage ■ Low on-voltage drop ■ High current capability ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistor TAB 3 1 D²PAK 3 12
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STGB35N35LZ
STGP35N35LZ
O-220
B1 6 zener
GP35N35LZ
624 Marking Code
ST IGBT code marking
IC120
STGB35N35LZ
STGB35N35LZ-1
STGB35N35LZT4
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STGB35N35LZ-1
Abstract: STGP35N35LZ GP35N35LZ STGB35N35LZ STGB35N35LZT4
Text: STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT Features TAB • Low threshold voltage ■ Low on-voltage drop ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistors TAB 3 1 D²PAK TAB 3 12 Application ■ I²PAK
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STGB35N35LZ
STGP35N35LZ
O-220
STGB35N35LZ-1
STGP35N35LZ
GP35N35LZ
STGB35N35LZ
STGB35N35LZT4
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GB18N40LZ
Abstract: GD18N40LZ automotive pencil ignition coil STGP18N40LZ GP18N40LZ STGD18N40LZ STGB18N40LZ stgp18n40 STGB18N40LZ-1 STGB18N40LZT4
Text: STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive
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STGB18N40LZ
STGD18N40LZ,
STGP18N40LZ
O-220
GB18N40LZ
GD18N40LZ
automotive pencil ignition coil
STGP18N40LZ
GP18N40LZ
STGD18N40LZ
STGB18N40LZ
stgp18n40
STGB18N40LZ-1
STGB18N40LZT4
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2SK4174
Abstract: K4174 k417 2SK41 216mJ
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package Gate-source surrender voltage VGSS : ±25 V guaranteed Avalanche energy capability guaranteed: EAS > 216 mJ
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2002/95/EC)
2SK4174
O-220D-A1
2SK4174
K4174
k417
2SK41
216mJ
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K4208
Abstract: 2SK4208 2SK420 2SK42
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package Gate-source surrender voltage VGSS : ±30 V guaranteed Avalanche energy capability guaranteed: EAS > 801 mJ
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2002/95/EC)
2SK4208
O-220D-A1
K4208
2SK4208
2SK420
2SK42
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IC120
Abstract: STGB35N35LZ STGB35N35LZ-1 STGB35N35LZT4 GE 019-4
Text: STGB35N35LZ EAS 450 mJ, 345 V internally clamped IGBT Features • Low threshold voltage ■ Low on-voltage drop TAB TAB ■ High current capability ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistor 3 I²PAK D²PAK Application
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STGB35N35LZ
SC30180
IC120
STGB35N35LZ
STGB35N35LZ-1
STGB35N35LZT4
GE 019-4
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GB18N40LZ
Abstract: GD18N40LZ GD18N GB18N40 GD18N40 gb18n40l STGD18N40LZ-1 STGD18N40LZT4 STGB18N40LZ STGB18N40LZT4
Text: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive
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STGB18N40LZ
STGD18N40LZ
GB18N40LZ
GD18N40LZ
GD18N
GB18N40
GD18N40
gb18n40l
STGD18N40LZ-1
STGD18N40LZT4
STGB18N40LZ
STGB18N40LZT4
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GD18N40LZ
Abstract: GB18N40LZ GD18N GB18N40 SCHEMATIC IGNITION iGBT STGD18N40LZT4 ignition coil IGBT gb18n40l
Text: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive
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STGB18N40LZ
STGD18N40LZ
GD18N40LZ
GB18N40LZ
GD18N
GB18N40
SCHEMATIC IGNITION iGBT
STGD18N40LZT4
ignition coil IGBT
gb18n40l
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GD18N40LZ
Abstract: GB18N40LZ GB18N40 GD18N GD18N40 STGB18N40LZ STGB18N40LZ-1 STGB18N40LZT4 STGD18N40LZ STGD18N40LZ-1
Text: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive
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STGB18N40LZ
STGD18N40LZ
GD18N40LZ
GB18N40LZ
GB18N40
GD18N
GD18N40
STGB18N40LZ
STGB18N40LZ-1
STGB18N40LZT4
STGD18N40LZ
STGD18N40LZ-1
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STGB35N35LZT4
Abstract: STGB35N35LZ STGB35N35LZ-1 GB35N35LZ Igbt high voltage low current
Text: STGB35N35LZ EAS 350 mJ, 350 V internally clamped IGBT Features • Low threshold voltage ■ Low on-voltage drop ■ High current capability ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistor 3 I²PAK D²PAK Applications ■ 3
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STGB35N35LZ
SC30180
STGB35N35LZT4
STGB35N35LZ
STGB35N35LZ-1
GB35N35LZ
Igbt high voltage low current
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DO-220AA
Abstract: J-STD-002 VISHAY DO220AA
Text: New Product SS2P2, SS2P3 & SS2P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP TM Series DO-220AA SMP PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 20 V, 30 V, 40 V IFSM 50 A EAS 11.25 mJ VF 0.50 V
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DO-220AA
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
DO-220AA
J-STD-002
VISHAY DO220AA
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