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    EAS CODE Search Results

    EAS CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DM7842J/883 Rochester Electronics LLC DM7842J/883 - BCD/Decimal Visit Rochester Electronics LLC Buy
    9310FM Rochester Electronics LLC 9310 - BCD Decade Counter (Mil Temp) Visit Rochester Electronics LLC Buy
    54LS48J/B Rochester Electronics LLC 54LS48 - BCD-to-Seven-Segment Decoders Visit Rochester Electronics LLC Buy
    TLC32044IFK Rochester Electronics LLC PCM Codec, 1-Func, CMOS, CQCC28, CC-28 Visit Rochester Electronics LLC Buy
    TLC32044IN Rochester Electronics LLC PCM Codec, 1-Func, CMOS, PDIP28, PLASTIC, DIP-28 Visit Rochester Electronics LLC Buy

    EAS CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    arcotronics

    Abstract: arcotronics capacitors Arcotronics aluminium electrolytic capacitors 200 EAS107M050AL3AA arcotronics 12,5 arcotronics 12.5 arcotronics 1,4 ac capacitors ARCOTRONICS 12.5 capacitor
    Text: ARCOTRONICS EAS Aluminium Electrolytic Capacitors SINGLE-ENDED LEADS – High temperature 125°C / 3000- 5000 h Description Long life 3000-5000 hours and high reliability. Marking Arcotronics’logo series EAS , operating temperature (125°C), capacitance (µF),


    Original     		PDF EAS226M035AG3AA EAS336M035AH1AA EAS476M035AH2AA EAS107M035AH4AA EAS227M035AL4AA EAS337M035AM5AA EAS474M050AG3AA EAS105M050AG3AA EAS225M050AG3AA EAS335M050AG3AA arcotronics arcotronics capacitors Arcotronics aluminium electrolytic capacitors 200 EAS107M050AL3AA arcotronics 12,5 arcotronics 12.5 arcotronics 1,4 ac capacitors ARCOTRONICS 12.5 capacitor

    SMB MARKING mj

    Abstract: tt110c B140B B140BT-01
    Text: SPECIAL CUSTOMER PARTS SPECIFICATION SHEET 1. Part information Part Number: Description: Outline: Marking: Package: Issue date: Series No.: Cust. code.: Cust. dwg#: Rev. Level: B140BT-01 Special IFSM, VF, IR, EAS, IAR, Cj, Dim. A, H SMB Cathode band + LT logo + D/C + B140B


    Original     		PDF B140BT-01 B140B P746A 371S0054 190mH 100kHz, SMB MARKING mj tt110c B140B B140BT-01

    Untitled

    Abstract: No abstract text available
    Text: Ceramic Substrate Trimmer Potentiometers/EVME२ 6 mm Square Dustproof Ceramic Trimmer Potentiometers Cermet, Radial Taping, with Knob Protection Type: EVMEAS/EVMEGS/EVMEES EAS EES • Features EGS ■ Recommended Applications ● High reliability due to cermet element


    Original     		PDF C5260-1

    AN97080

    Abstract: ISO7816-3 ISO7816-4 TDA8006 apdu
    Text: APPLICATION NOTE EASY SOFTWARE DEVELOPMENT FOR TDA8006 Preliminary Library Reference Releas e 1. 3 AN/97080 C51 KEIL Compiler Philips Semiconductors EAS Y S OFTWARE DEVELOPMENT FOR TDA8006 Preli mi nary Li brary Reference APPLICATION NOTE EASY SOFTWARE DEVELOPMENT


    Original     		PDF TDA8006 AN/97080 ISO7816-3, ISO7816-4 AN97080 ISO7816-3 ISO7816-4 TDA8006 apdu

    Untitled

    Abstract: No abstract text available
    Text: STGB20N40LZ, STGD20N40LZ Automotive 390 V internally clamped IGBT EAS 300 mJ Datasheet - preliminary data Features • Designed for automotive applications • ESD gate-emitter protection TAB • Gate-collector high voltage clamping TAB • Logic level gate drive


    Original     		PDF STGB20N40LZ, STGD20N40LZ DocID024251

    Untitled

    Abstract: No abstract text available
    Text: STGB20N40LZ, STGD20N40LZ Automotive-grade 390 V internally clamped IGBT EAS 300 mJ Datasheet - production data Features • Designed for automotive applications and AEQ-Q101 qualified TAB • ESD gate-emitter protection TAB • Gate-collector high voltage clamping


    Original     		PDF STGB20N40LZ, STGD20N40LZ AEQ-Q101 DocID024251

    ss2ph10

    Abstract: No abstract text available
    Text: SS2PH9 & SS2PH10 New Product Vishay General Semiconductor High-Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for improved high temperature performance Major Ratings and Characteristics IF AV VRRM IFSM EAS VF IR Tj max. 2.0 A 90 V, 100 V


    Original     		PDF SS2PH10 DO-220AA J-STD-020C 2002/95/EC 2002/96/EC 08-Apr-05 ss2ph10

    Untitled

    Abstract: No abstract text available
    Text: STGB35N35LZ STGP35N35LZ Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ Datasheet - production data Features TAB • Designed for automotive applications and AEC-Q101 qualified TAB • Low threshold voltage 3 1 D²PAK • Low on-voltage drop TAB


    Original     		PDF STGB35N35LZ STGP35N35LZ AEC-Q101 O-220 DocID12253

    Untitled

    Abstract: No abstract text available
    Text: Ceramic Substrate Trimmer Potentiometers/EVME 6 mm Square Dustproof Ceramic Trimmer Potentiometers Cermet, Radial Taping, with Knob Protection Type: EVMEAS/EVMEGS/EVMEES EAS EES n Features l High reliability realized by cermet element l No readjustment needed through knob protected


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: POW ER Y TO US EAS E BL E Advanced Multi-GNSS Simulator FUTURE PROOF L FU GSG-6 Series AFF O R D A Upgradable to all constellations and signals • Multi-GNSS, Multi-Frequency Simulator • GPS standard, new L2C, L5 GLONASS, Galileo, and BeiDou • Simultaneous multi-frequency P-code


    Original     		PDF MIL-PRF-28800F,

    SS2P6E3

    Abstract: No abstract text available
    Text: SS2P5 & SS2P6 New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier Major Ratings and Characteristics IF AV 2A VRRM 50 V, 60 V IFSM 50 A EAS 11.25 mJ VF 0.54 V Tj max. 150 °C DO-220AA (SMP) Features Mechanical Data


    Original     		PDF DO-220AA J-STD-020C 2002/95/EC 2002/96/EC J-STD-002B JESD22-B102D 08-Apr-05 SS2P6E3

    ss3p4

    Abstract: SS3P4-E3/84A
    Text: SS3P4 New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier Major Ratings and Characteristics IF AV 3A VRRM 40 V IFSM 50 A EAS 11.25 mJ VF 0.50 V Tj max. 150 °C DO-220AA (SMP) Features Mechanical Data • • •


    Original     		PDF DO-220AA J-STD-020C 2002/95/EC 2002/96/EC J-STD-002B JESD22-B102D 08-Apr-05 ss3p4 SS3P4-E3/84A

    035H

    Abstract: IRFPE30 diode code ae
    Text: PD- 95502 IRFP048RPbF • Lead-Free Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Max. ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 52 IDM 290 Pulsed Drain Current PD @TC = 25°C Power Dissipation VGS EAS Units


    Original     		PDF IRFP048RPbF 12-Mar-07 035H IRFPE30 diode code ae

    B1 6 zener

    Abstract: GP35N35LZ 624 Marking Code ST IGBT code marking IC120 STGB35N35LZ STGB35N35LZ-1 STGB35N35LZT4
    Text: STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V internally clamped IGBT Features TAB • Low threshold voltage ■ Low on-voltage drop ■ High current capability ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistor TAB 3 1 D²PAK 3 12


    Original     		PDF STGB35N35LZ STGP35N35LZ O-220 B1 6 zener GP35N35LZ 624 Marking Code ST IGBT code marking IC120 STGB35N35LZ STGB35N35LZ-1 STGB35N35LZT4

    STGB35N35LZ-1

    Abstract: STGP35N35LZ GP35N35LZ STGB35N35LZ STGB35N35LZT4
    Text: STGB35N35LZ STGP35N35LZ EAS 450 mJ, 345 V, internally clamped IGBT Features TAB • Low threshold voltage ■ Low on-voltage drop ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistors TAB 3 1 D²PAK TAB 3 12 Application ■ I²PAK


    Original     		PDF STGB35N35LZ STGP35N35LZ O-220 STGB35N35LZ-1 STGP35N35LZ GP35N35LZ STGB35N35LZ STGB35N35LZT4

    GB18N40LZ

    Abstract: GD18N40LZ automotive pencil ignition coil STGP18N40LZ GP18N40LZ STGD18N40LZ STGB18N40LZ stgp18n40 STGB18N40LZ-1 STGB18N40LZT4
    Text: STGB18N40LZ STGD18N40LZ, STGP18N40LZ EAS 180 mJ - 390 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive


    Original     		PDF STGB18N40LZ STGD18N40LZ, STGP18N40LZ O-220 GB18N40LZ GD18N40LZ automotive pencil ignition coil STGP18N40LZ GP18N40LZ STGD18N40LZ STGB18N40LZ stgp18n40 STGB18N40LZ-1 STGB18N40LZT4

    2SK4174

    Abstract: K4174 k417 2SK41 216mJ
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ


    Original     		PDF 2002/95/EC) 2SK4174 O-220D-A1 2SK4174 K4174 k417 2SK41 216mJ

    K4208

    Abstract: 2SK4208 2SK420 2SK42
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs 2SK4208 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±30 V guaranteed  Avalanche energy capability guaranteed: EAS > 801 mJ


    Original     		PDF 2002/95/EC) 2SK4208 O-220D-A1 K4208 2SK4208 2SK420 2SK42

    IC120

    Abstract: STGB35N35LZ STGB35N35LZ-1 STGB35N35LZT4 GE 019-4
    Text: STGB35N35LZ EAS 450 mJ, 345 V internally clamped IGBT Features • Low threshold voltage ■ Low on-voltage drop TAB TAB ■ High current capability ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistor 3 I²PAK D²PAK Application


    Original     		PDF STGB35N35LZ SC30180 IC120 STGB35N35LZ STGB35N35LZ-1 STGB35N35LZT4 GE 019-4

    GB18N40LZ

    Abstract: GD18N40LZ GD18N GB18N40 GD18N40 gb18n40l STGD18N40LZ-1 STGD18N40LZT4 STGB18N40LZ STGB18N40LZT4
    Text: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive


    Original     		PDF STGB18N40LZ STGD18N40LZ GB18N40LZ GD18N40LZ GD18N GB18N40 GD18N40 gb18n40l STGD18N40LZ-1 STGD18N40LZT4 STGB18N40LZ STGB18N40LZT4

    GD18N40LZ

    Abstract: GB18N40LZ GD18N GB18N40 SCHEMATIC IGNITION iGBT STGD18N40LZT4 ignition coil IGBT gb18n40l
    Text: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive


    Original     		PDF STGB18N40LZ STGD18N40LZ GD18N40LZ GB18N40LZ GD18N GB18N40 SCHEMATIC IGNITION iGBT STGD18N40LZT4 ignition coil IGBT gb18n40l

    GD18N40LZ

    Abstract: GB18N40LZ GB18N40 GD18N GD18N40 STGB18N40LZ STGB18N40LZ-1 STGB18N40LZT4 STGD18N40LZ STGD18N40LZ-1
    Text: STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features • AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high voltage clamping ■ Logic level gate drive


    Original     		PDF STGB18N40LZ STGD18N40LZ GD18N40LZ GB18N40LZ GB18N40 GD18N GD18N40 STGB18N40LZ STGB18N40LZ-1 STGB18N40LZT4 STGD18N40LZ STGD18N40LZ-1

    STGB35N35LZT4

    Abstract: STGB35N35LZ STGB35N35LZ-1 GB35N35LZ Igbt high voltage low current
    Text: STGB35N35LZ EAS 350 mJ, 350 V internally clamped IGBT Features • Low threshold voltage ■ Low on-voltage drop ■ High current capability ■ High voltage clamping feature ■ Gate and gate-emitter integrated resistor 3 I²PAK D²PAK Applications ■ 3


    Original     		PDF STGB35N35LZ SC30180 STGB35N35LZT4 STGB35N35LZ STGB35N35LZ-1 GB35N35LZ Igbt high voltage low current

    DO-220AA

    Abstract: J-STD-002 VISHAY DO220AA
    Text: New Product SS2P2, SS2P3 & SS2P4 Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES eSMP TM Series DO-220AA SMP PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 20 V, 30 V, 40 V IFSM 50 A EAS 11.25 mJ VF 0.50 V


    Original     		PDF DO-220AA J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08 DO-220AA J-STD-002 VISHAY DO220AA