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    K4174 Price and Stock

    Vishay Intertechnologies CRCW25122K70JNEG

    Thick Film Resistors - SMD 1watt 2.7Kohms 5%
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    TTI CRCW25122K70JNEG Reel 2,000
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    Dialight 56802422223F

    LED Circuit Board Indicators CBI 3MM QUAD X 3 BKL
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    TTI 56802422223F Bulk 210
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    K4174 Datasheets Context Search

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    K4174

    Abstract: 2SK4174 k417 SJG00045AED
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs K4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ


    Original     		PDF 2002/95/EC) 2SK4174 O-220D-A1 K4174 2SK4174 k417 SJG00045AED

    2SK4174

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs K4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ


    Original     		PDF 2002/95/EC) 2SK4174 O-220D-A1 2SK4174

    2SK4174

    Abstract: K4174 k417 2SK41 216mJ
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOS FETs K4174 Silicon N-channel enhancement MOS FET For high speed switching circuits • Package  Gate-source surrender voltage VGSS : ±25 V guaranteed  Avalanche energy capability guaranteed: EAS > 216 mJ


    Original     		PDF 2002/95/EC) 2SK4174 O-220D-A1 2SK4174 K4174 k417 2SK41 216mJ