IC ATA 2398
Abstract: ata 2398 transistor D 2395 NE33284A te 2395 TRANSISTOR low noise FET NEC U TVR 681
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR E33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The N E33284A is a Herero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for GPS,
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NE33284A
NE33284A
IC ATA 2398
ata 2398
transistor D 2395
te 2395 TRANSISTOR
low noise FET NEC U
TVR 681
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NE33284AS
Abstract: FR 401
Text: NEC SUPER LOW NOISE HJ FET FEATURES E33284A N O IS E FIG U R E & A S S O C IA T E D G A IN vs. F R E Q U E N C Y Vos = 2 V, I d s = 10 m A VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz HIGH ASSO C IA TED GAIN: 10.5 dB Typical at 12 GHz CD GATE LENGTH: 0.3 nm
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NE33284A
NE33284A
IS12S21I
E33284A
NE33284AS
NE33284A-T1
84ASL
FR 401
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NE33284A
Abstract: NE33284A-SL NE33284AS
Text: SUPER LOW NOISE HJ FET E33284A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz <n • GATE LENGTH: 0.3 pm • GATE WIDTH: 280 pm
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NE33284A
NE33284A
24-Hour
NE33284A-SL
NE33284AS
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