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    P629 Search Results

    P629 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MCP6292IDGKR Texas Instruments 10-MHz, Low-Noise, RRIO Operational Amplifier 8-VSSOP -40 to 125 Visit Texas Instruments Buy
    MCP6292IDDFR Texas Instruments Dual, 5.5-V, 10-MHz, low noise (8.7-nV/√Hz), RRIO operational amplifier 8-SOT-23-THIN -40 to 125 Visit Texas Instruments Buy
    MCP6294IDR Texas Instruments 10-MHz, Low-Noise, RRIO Operational Amplifier 14-SOIC -40 to 125 Visit Texas Instruments Buy
    MCP6292IDGKT Texas Instruments 10-MHz, Low-Noise, RRIO Operational Amplifier 8-VSSOP -40 to 125 Visit Texas Instruments Buy
    MCP6292IDR Texas Instruments 10-MHz, Low-Noise, RRIO Operational Amplifier 8-SOIC -40 to 125 Visit Texas Instruments Buy
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    P629 Price and Stock

    Texas Instruments MCP6292IDDFR

    IC OPAMP GP 2 CIRCUIT TSOT23-8
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    DigiKey MCP6292IDDFR Digi-Reel 30,859 1
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    MCP6292IDDFR Cut Tape 30,859 1
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    MCP6292IDDFR Reel 24,000 3,000
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    Mouser Electronics MCP6292IDDFR 45,545
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    Texas Instruments MCP6291IDBVR

    IC OPAMP GP 1 CIRCUIT SOT23-5
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    DigiKey MCP6291IDBVR Digi-Reel 5,846 1
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    MCP6291IDBVR Cut Tape 5,846 1
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    MCP6291IDBVR Reel 3,000 3,000
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    Mouser Electronics MCP6291IDBVR 16,803
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    Microchip Technology Inc MCP6292T-H/MS

    IC OPAMP GP 2 CIRCUIT 8MSOP
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    DigiKey MCP6292T-H/MS Cut Tape 3,375 1
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    MCP6292T-H/MS Reel 2,500 2,500
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    Avnet Americas MCP6292T-H/MS Reel 4 Weeks 2,500
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    Newark MCP6292T-H/MS Reel 2,500
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    Microchip Technology Inc MCP6292T-H/MS 15,000
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    NAC MCP6292T-H/MS 12,500 1
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    Avnet Silica MCP6292T-H/MS 6 Weeks 2,500
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    EBV Elektronik MCP6292T-H/MS 5 Weeks 2,500
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    Master Electronics MCP6292T-H/MS
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    Texas Instruments MCP6291IDCKR

    IC OPAMP GP 1 CIRCUIT SC70-5
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    DigiKey MCP6291IDCKR Cut Tape 2,859 1
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    MCP6291IDCKR Digi-Reel 2,859 1
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    Texas Instruments MCP6294IDR

    IC OPAMP GP 4 CIRCUIT 14SOIC
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    DigiKey MCP6294IDR Digi-Reel 2,384 1
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    MCP6294IDR Cut Tape 2,384 1
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    Mouser Electronics MCP6294IDR 2,555
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    P629 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    P6291 Hamamatsu Photointerrupter Original PDF

    P629 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: V23990-P629-L63-PM flow BOOST 0 1200V/50A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications


    Original
    PDF V23990-P629-L63-PM 200V/50A V23990-P629-L63 D7-D10

    Untitled

    Abstract: No abstract text available
    Text: V23990-P629-FXX-PM final data sheet V23990-P629-F54-01-14 flow0 Maximum Ratings / Höchstzulässige Werte Parameter Condition P629-F54 1200V/25A Symbol Datasheet values Unit max. Transistor H-bridge IGBT Transistor H-Brücke(IGBT) Collector-emitter break down voltage


    Original
    PDF V23990-P629-FXX-PM V23990-P629-F54-01-14 P629-F54 200V/25A 90-P629F54

    MBM27C256A-20

    Abstract: kawasaki Microcontroller DIP-64P-M01 FPT-64P-M06 MB89628R MB89629R MB89P629 MB89PV620
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS07-12517-2E 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89628R/629R/P629 MB89628R/629R/P629 • DESCRIPTION The MB89628R/629R/P629 have been developed as a general-purpose version of the F2MC*-8L family


    Original
    PDF DS07-12517-2E MB89628R/629R/P629 MB89628R/629R/P629 F9703 MBM27C256A-20 kawasaki Microcontroller DIP-64P-M01 FPT-64P-M06 MB89628R MB89629R MB89P629 MB89PV620

    Untitled

    Abstract: No abstract text available
    Text: V23990-P629-F73-PM preliminary datasheet DC Boost Application flowBOOST 1200V/40A General conditions BOOST = = = = VGEon VGEoff Rgon Rgoff Figure 1. IGBT 15 V 0V 4Ω 4Ω Figure 2. Typical average static loss as a function of input current IiRMS Ploss=f Iin


    Original
    PDF V23990-P629-F73-PM 200V/40A Tjmax-25Â

    Untitled

    Abstract: No abstract text available
    Text: V23990-P629-L99-PM datasheet flow BOOST 0 1200V/40A Features flow 0 17mm housing ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current Target Applications ● solar inverter


    Original
    PDF V23990-P629-L99-PM 200V/40A

    DIP-64P-M01

    Abstract: FPT-64P-M06 MB89628R MB89629R MB89P629 MB89PV620 MBM27C256A-20 8005H
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12517-2E 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89628R/629R/P629 MB89628R/629R/P629 • DESCRIPTION The MB89628R/629R/P629 have been developed as a general-purpose version of the F2MC*-8L family consisting of proprietary 8-bit, single-chip microcontrollers.


    Original
    PDF DS07-12517-2E MB89628R/629R/P629 MB89628R/629R/P629 F9606 DIP-64P-M01 FPT-64P-M06 MB89628R MB89629R MB89P629 MB89PV620 MBM27C256A-20 8005H

    8005H

    Abstract: DIP-64P-M01 FPT-64P-M06 MB89628R MB89629R MB89P629 MB89PV620 MBM27C256A-20
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12517-2E 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89628R/629R/P629 MB89628R/629R/P629 • DESCRIPTION The MB89628R/629R/P629 have been developed as a general-purpose version of the F2MC*-8L family consisting of proprietary 8-bit, single-chip microcontrollers.


    Original
    PDF DS07-12517-2E MB89628R/629R/P629 MB89628R/629R/P629 F9703 8005H DIP-64P-M01 FPT-64P-M06 MB89628R MB89629R MB89P629 MB89PV620 MBM27C256A-20

    1BW TRANSISTOR

    Abstract: P6291 KPCA0006EA KPCB0001EA KPCB0004EA KPCB0005EA KPCB0006EA KPCC0007EA
    Text: PHOTOINTERRUPTER Photointerrupter P6291 Photo IC output P6921 is a photointerrupter consisting of a high-power infrared LED and a photo IC. The photo IC incorporates a high-sensitivity photodiode, an amplifier, a Schmitt trigger circuit and an output transistor, all integrated in a single chip. These elements are enclosed in a miniature C-shape


    Original
    PDF P6291 P6921 SE-171 KPC1007E01 1BW TRANSISTOR P6291 KPCA0006EA KPCB0001EA KPCB0004EA KPCB0005EA KPCB0006EA KPCC0007EA

    Untitled

    Abstract: No abstract text available
    Text: V23990-P629-L59-PM preliminary datasheet DC Boost Application flowBOOST 1200V/40A General conditions BOOST = = = = VGEon VGEoff Rgon Rgoff Figure 1. IGBT 15 V 0V 4Ω 4Ω Figure 2. Typical average static loss as a function of input current IiRMS Ploss=f Iin


    Original
    PDF V23990-P629-L59-PM 200V/40A Tjmax-25Â

    Untitled

    Abstract: No abstract text available
    Text: V23990-P629-L48-PM V23990-P629-L48Y-PM V23990-P629-L49-PM V23990-P629-L49Y-PM datasheet flow BOOST 0 1200 V / 40 A Features flow 0 housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode


    Original
    PDF V23990-P629-L48-PM V23990-P629-L48Y-PM V23990-P629-L49-PM V23990-P629-L49Y-PM V23990-P629-L48-PM V23990-P629-L49-PM

    Untitled

    Abstract: No abstract text available
    Text: V23990-P629-F72-PM datasheet flow BOOST 1200 V / 40 A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter


    Original
    PDF V23990-P629-F72-PM

    Untitled

    Abstract: No abstract text available
    Text: V23990-P629-F63 preliminary datasheet DC Boost Application flowBOOST 0 1200V/40A General conditions BOOST = = = = VGEon VGEoff Rgon Rgoff Figure 1. IGBT 15 V -15 V 4Ω 4Ω Figure 2. Typical average static loss as a function of input current IiRMS Ploss=f Iin


    Original
    PDF V23990-P629-F63 200V/40A Tjmax-25Â

    V23990-P629-F56-PM

    Abstract: V23990-P629F
    Text: V23990-P629-F56-PM final data sheet flow0 V23990-P629-F56-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition P629-F56 1200V/25A Symbol Datasheet values Unit max. Transistor H-bridge IGBT Transistor H-Brücke(IGBT) Collector-emitter break down voltage


    Original
    PDF V23990-P629-F56-PM V23990-P629-F56-01-14 P629-F56 200V/25A V23990-P629F56 V23990-P629-F56-PM V23990-P629F

    Untitled

    Abstract: No abstract text available
    Text: V23990-P629-F62-PM / V23990-P629-F629-PM V23990-P629-F628Y-PM / V23990-P629-F629Y-PM DC Boost Application flow BOOST 0 1200V/40A General conditions BOOST = = = = VGEon VGEoff Rgon Rgoff Figure 1. IGBT 15 V 0V 4Ω 4Ω Figure 2. Typical average static loss as a function of


    Original
    PDF V23990-P629-F62-PM V23990-P629-F629-PM V23990-P629-F628Y-PM V23990-P629-F629Y-PM 200V/40A Tjmax-25Â

    8XC196KB

    Abstract: P629 270909
    Text: 8XC196KB/8XC196KB16 Table 2. 8XC196KB Memory Map PROCESS INFORMATION This device is manufactured on P629.0 and 629.1, a CHMOS III-E process. Additional process and reliability information is available in the Intel Quality System Handbook:


    Original
    PDF 8XC196KB/8XC196KB16 8XC196KB 2080H 207FH 2040H 203FH 2030H 202FH 2020H 201FH P629 270909

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS07-12517-2E 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89628R/629R/P629 MB89628R/629R/P629 • DESCRIPTION The MB89628R/629R/P629 have been developed as a general-purpose version of the F2MC*-8L family consisting of proprietary 8-bit, single-chip microcontrollers.


    Original
    PDF DS07-12517-2E MB89628R/629R/P629 MB89628R/629R/P629 F9606

    Untitled

    Abstract: No abstract text available
    Text: V23990-P629-L59-PM preliminary datasheet flowBOOST 1200V/40A Features flow0 17mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V Si diode Target Applications Schematic ● solar inverter


    Original
    PDF V23990-P629-L59-PM 200V/40A

    Untitled

    Abstract: No abstract text available
    Text: V23990-P629-L43-PM datasheet flow BOOST 0 1200 V / 50 A Features flow 0 12mm housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode ● Antiparallel IGBT protection diode with high current


    Original
    PDF V23990-P629-L43-PM

    Untitled

    Abstract: No abstract text available
    Text: PHOTOINTERRUPTER Photointerrupter P6291 Photo IC output P6921 is a photointerrupter consisting of a high-power infrared LED and a photo IC. The photo IC incorporates a high-sensitivity photodiode, an amplifier, a Schmitt trigger circuit and an output transistor, all integrated in a single chip. These elements are enclosed in a miniature C-shape


    Original
    PDF P6291 P6921 SE-171 KPC1007E02

    Untitled

    Abstract: No abstract text available
    Text: PHOTOINTERRUPTER Photointerrupter P6291 Photo IC output P6921 is a photointerrupter consisting of a high-power infrared LED and a photo IC. The photo IC incorporates a high-sensitivity photodiode, an amplifier, a Schmitt trigger circuit and an output transistor, all integrated in a single chip. These elements are enclosed in a miniature C-shape


    Original
    PDF P6291 P6921 SE-171 KPC1007E03

    T Flip-Flop

    Abstract: RS flip-flop I387 SP629A
    Text: RS/T F L IP -F L O P P629A Single V PIN CONFIGURATION 14 13 1 2 12 11 10 « • n n n n n nxi u□□a□ 3 4 S ft 7 f S P629A ELECTRICAL CHARACTERISTICS Standard Conditions: V q q = 5.0V , C H A R A C T E R IS T IC O u tp u t V o lta g e " 1 " Level " 0 " Level


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    PDF SP629A SP629A -200fiA, T Flip-Flop RS flip-flop I387

    B896

    Abstract: MQ-5 P629 DIP-64P-M01 FPT-64P-M06 MB89628R MB89629R MB89P629 MB89PV620 MBM27C256A-20
    Text: 8-bit Proprietary Microcontroller WÈËÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈÈË F2MC-8L MB89628R/629R/P629 MB89628R/629R/P629 • DESCRIPTION The MB89628R/629R/P629 have been developed as a general-purpose version of the F2MC*-8L family


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    PDF MB89628R/629R/P629 B89628R/629R/P629 MB89628R/629R/P629 MB89P629 MB89628sales B896 MQ-5 P629 DIP-64P-M01 FPT-64P-M06 MB89628R MB89629R MB89PV620 MBM27C256A-20

    Untitled

    Abstract: No abstract text available
    Text: CDI P /N -1 APPLICABLE NOTE S' 1,2,3 REVISIONS ZONE - REV DESCRIPTION DATE BY A ECO 11790 IMG 0 6 .1 2 .0 0 B ECO 12090 0 8 /1 0 /0 0 IMG C ECO 13792 10.11.01 AGS TO ACCEPT DRAWING NO. P629 NOTE(S): 1. MATERIAL(S): 1.1 BODY, CENTER CONDUCTOR,EMI AND ANTI-ROCK RINGS:


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET D S07-12517-2E 8-bit Proprietary Microcontroller B lIlB F2MC-8L MB89628R/629R/P629


    OCR Scan
    PDF S07-12517-2E MB89628R/629R/P629 MB89628R/629R/P629 F9703