99218
Abstract: POM7-256C Fluke 54200 HLE-115
Text: JULY 14, 1999 TEST REPORT #99218 QUALIFICATION TESTING HLE-115-Ol-L-DV TSM-115-04-L-DV SAMTEC CORPORATION APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. L REVISION LEVEL DATE DESCRIPTION REVISION NO. - r INITIAL ISSUE
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HLE-115-Ol-L-DV
TSM-115-04-L-DV
992180C
99218
POM7-256C
Fluke 54200
HLE-115
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LQFP 216
Abstract: MN10300 216-pin ITU-R BT.656 to ieee1394 dv 6m REC656-IF compression mpeg 1 layer 2 MN673745 2600 dram
Text: New Mutual conversion of DV and MPEG 2 is easily realized with digitized data. DV-Codec LSI MN673745 with Built-in IEEE1394 Link Layer Overview 26.00 ±0.20 24.00 ±0.10 162 109 108 24.00 ±0.10 26.00 ±0.20 (1.40) 163 55 216 54 0.40 (1.40) 0.16 ±0.05
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MN673745)
IEEE1394
REC656
1394a-2000
MN10300
MN673745
MN673745
1394a-2000
LQFP 216
216-pin
ITU-R BT.656 to ieee1394
dv 6m
REC656-IF
compression mpeg 1 layer 2
2600 dram
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ITU-R BT.656 to ieee1394
Abstract: lsi mpeg LQFP 216 MN673745 mn103 dv 6m
Text: New Mutual conversion of DV and MPEG 2 is easily realized with digitized data. DV-Codec LSI MN673745 with Built-in IEEE1394 Link Layer Overview 26.00 ±0.20 24.00 ±0.10 162 109 108 24.00 ±0.10 26.00 ±0.20 (1.40) 163 55 216 1 54 0.40 (1.40) 0.16 ±0.05
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MN673745)
IEEE1394
MN673745
REC656-IF)
1394a-2000,
REC656
1394a-2000
MN10300
ITU-R BT.656 to ieee1394
lsi mpeg
LQFP 216
mn103
dv 6m
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marking 93A
Abstract: No abstract text available
Text: PD- 95350 IRFB9N30APbF HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleing Dynamic dv/dt Rated Simple Drive Requirements l Lead-Free D VDSS = 300V RDS on = 0.45Ω G ID = 9.3A S Description Third Generation HEXFETs from International Rectifier provide the designer
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IRFB9N30APbF
O-220
O-220AB.
O-220AB
marking 93A
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55n03
Abstract: MOSFET 55N03 ir 55n03 MTN55N03J3 DSA006750
Text: Spec. No. : C411J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN55N03J3 BVDSS ID RDSON 25V 55A 6mΩ Features • Dynamic dv/dt Rating • Simple Drive Requirement • Repetitive Avalanche Rated
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C411J3
MTN55N03J3
O-252
UL94V-0
55n03
MOSFET 55N03
ir 55n03
MTN55N03J3
DSA006750
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ICX080AK
Abstract: CM500S CXD1267AN 5fsc
Text: ICX080AK Diagonal 6mm Type 1/3 CCD Image Sensor for NTSC Color Video Cameras Description The ICX080AK is an interline CCD solid-state image sensor suitable for NTSC color video cameras. This chip conforms to DV standard SD mode, and has the optimal number of pixels for
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ICX080AK
ICX080AK
16pin
450mil)
CM500S
CXD1267AN
5fsc
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Untitled
Abstract: No abstract text available
Text: REVISION A DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] FT5-XX-XX.X-X-DV-XX-X-TR C C DO NOT SCALE FROM THIS PRINT 14 0.50 .020 TYP LEAD STYLE -01.0: 1MM -03.0: 3MM *-06.0: 6MM *-08.0: 8MM *-10.0: 10MM 02 "A" PACKAGING -TR: TAPE & REEL (SEE NOTES 3,4,5 & 6)
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PPP-71)
T-1M84-XX
WT-63-XX
FT5-15-01
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CM500S
Abstract: CXD1267AN ICX081AK
Text: ICX081AK Diagonal 6mm Type 1/3 CCD Image Sensor for PAL Color Video Cameras Description The ICX081AK is an interline CCD solid-state image sensor suitable for PAL color video cameras. This chip conforms to DV standard SD mode, and has the optimal number of pixels for MPEG2 Main
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ICX081AK
ICX081AK
16pin
450mil)
CM500S
CXD1267AN
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CM500S
Abstract: CXD1267AN ICX080AK
Text: ICX080AK Diagonal 6mm Type 1/3 CCD Image Sensor for NTSC Color Video Cameras For the availability of this product, please contact the sales office. Description The ICX080AK is an interline CCD solid-state image sensor suitable for NTSC color video cameras. This chip conforms to DV standard SD
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ICX080AK
ICX080AK
16pin
450mil)
CM500S
CXD1267AN
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2N7261U
Abstract: IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U
Text: PD - 91806A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage
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1806A
IRHE7130
IRHE8130
JANSR2N7261U
JANSH2N7261U
100Volt,
1x106
2N7261U
IRHE7130
2N7261 equivalent
IRHE8130
JANSH2N7261U
JANSR2N7261U
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2N7261
Abstract: 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261
Text: PD - 90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage
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90653B
IRHF7130
IRHF8130
JANSR2N7261
JANSH2N7261
100Volt,
1x106
2N7261
2N7261 equivalent
reverse bias diode characterstics
IRHF7130
IRHF8130
JANSH2N7261
JANSR2N7261
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IRLP2505
Abstract: IRFPE30
Text: Previous Datasheet Index Next Data Sheet PD - _ IRLP2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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IRLP2505
O-247
FPE30
IRLP2505
IRFPE30
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IRL2505
Abstract: IRF1010
Text: Previous Datasheet Index Next Data Sheet PD - _ IRL2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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IRL2505
O-220
IRF1010
IRL2505
IRF1010
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IRFPE30
Abstract: IRLP3803 GD4000
Text: Previous Datasheet Index Next Data Sheet PD - _ IRLP3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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IRLP3803
O-247
isFPE30
IRFPE30
IRLP3803
GD4000
|
|
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Untitled
Abstract: No abstract text available
Text: Output Filters FN 510 Output Filter for Motor Drives Reduction of drive output voltage dv/dt Approvals Restriction of overvoltages on motor cables Reduction of motor temperature Increase of motor service life Improvement of system reliability Technical specifications
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C/400V
Mil-HB-217F)
2768-m
22768-m
16mm2
35mm2
10mm2
25mm2
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NTE2379
Abstract: No abstract text available
Text: NTE2379 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
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NTE2379
NTE2379
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MOSFET 20V 120A
Abstract: IRFPE30 IRLP3803 ISD71A
Text: PD - _ IRLP3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description VDSS = 30V RDS on = 0.006Ω
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IRLP3803
O-247
IRFPE30
MOSFET 20V 120A
IRFPE30
IRLP3803
ISD71A
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Untitled
Abstract: No abstract text available
Text: F-2 1 1 -1 ^ LSS-120-03-L-DV-A a . LSS-130-02-L-DV-A LSS-130-02-L-DV-A-K LSS-140-01-L-D V -A HIGH SPEED HERMAPHRODITIC STRIP High Speed/High Density SPECIFICATIONS Audible click when properly mated Mates with: LSS Insulator Material: Black Liquid Crystal t o
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LSS-120-03-L-DV-A
LSS-130-02-L-DV-A
LSS-130-02-L-DV-A-K
LSS-140-01-L-D
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M8513
Abstract: MA26W KB-362 M8513A-0 KB-262C4 1S464 KP4-8 M8513A-R 1S1212 1S467
Text: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 1S1300 1S1300 DS430 DV-2 DV-3 DV-4 DY-5 HSK23 HV23G HV123G KB— 469 KB— 162 KB-162C5B KB— 165 KB— 169 KB— 262 KB-262C4 KB-262M KB— 26 5 KB-265C4 KB—269 KB— 362 KB-362M KB— 365 KB— 369
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1S464
1S467
1s1z10
1S1212
1S1300
DS430
25MIN
26MIN
M8513
MA26W
KB-362
M8513A-0
KB-262C4
KP4-8
M8513A-R
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Untitled
Abstract: No abstract text available
Text: F -212 LSS-120-03-L-DV-A LSS-130-02-L-DV-A-K 0,635mm .025" LSS-140-01-L -D V -A LS S S E R IE S v - HIGH SPEED HER MAPHRODITIC STRIP High Speed/High Density SPECIFICATIONS LSS Low cost Blade & „ Beam y ^ •j i contact For complete specifications and
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LSS-120-03-L-DV-A
LSS-130-02-L-DV-A-K
635mm)
LSS-140-01-L
C45-475-1385
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KLH1540
Abstract: KLH1540A
Text: KLHl540/KLHl540A HIGH VOLTAGE, PHOTO 6MOS RELAY cosmo FEATURES • • • • • • • Normally Open,Single Pole Single Throw Control 350VAC or DC Voltage Switch 130mA Loads LED control Current, 5mA Low ON-Resistance dv/dt, >500V/ms Isolation Test Voltage, 3750VACrms
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KLH1540/KLH1540A
KLH1540
350VAC
130mA
00V/ms
3750VACrms
KLH1540A
KLH1540
KLH1540A
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Untitled
Abstract: No abstract text available
Text: Axial Leaded Capacitors _ Metallized Polypropylene Dielectric •MKP Tape Wrapped and Epoxy Endsealed Insulation Resistance MegOhms x MicroFarads Need Not Exceed MegOhms Test Voltage Measured after 1 minute of electrification. dv/dt Rated
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630VDC/250VAC*
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Untitled
Abstract: No abstract text available
Text: HE D I 4055452 G O G ^ a a | Data Sheet No. PD-9.513B INTERNATIONAL RECTIFIER _ INTERNATIONAL RECTIFIER I R T -39-23 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFAC30 IRFAC32
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IRFAC30
IRFAC32
G-221
MAS54S2
IRFAC30,
IRFAC32
G-222
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Untitled
Abstract: No abstract text available
Text: Axial leaded Capacitors Metallized Polypropylene Dielectric - M K P Tape Wrapped and Epoxy Endsealed Insulation Resistance MegOhms x MicroFarads Need Not Exceed MegOhms Test Voltage > 30,000 100,000 100 VDC Measured after 1 minute of electrification. dv/dt
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