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    Vishay Siliconix IRFB9N30APBF

    MOSFET N-CH 300V 9.3A TO220AB
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    IRFB9N30APBF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFB9N30APBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFB9N30APBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 9.3A TO-220AB Original PDF

    IRFB9N30APBF Datasheets Context Search

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    marking 93A

    Abstract: No abstract text available
    Text: PD- 95350 IRFB9N30APbF HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleing Dynamic dv/dt Rated Simple Drive Requirements l Lead-Free D VDSS = 300V RDS on = 0.45Ω G ID = 9.3A S Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRFB9N30APbF O-220 O-220AB. O-220AB marking 93A

    IRFB9N30A

    Abstract: SiHFB9N30A SiHFB9N30A-E3
    Text: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) Available VGS = 10 V Qg (Max.) (nC) 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration • Repetitive Avalanche Rated 0.45 RoHS* COMPLIANT


    Original     		PDF IRFB9N30A, SiHFB9N30A O-220 O-220 18-Jul-08 IRFB9N30A SiHFB9N30A-E3

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    Untitled

    Abstract: No abstract text available
    Text: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) VGS = 10 V 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration RoHS* • Repetitive Avalanche Rated 0.45 Qg (Max.) (nC) Available COMPLIANT


    Original     		PDF IRFB9N30A, SiHFB9N30A O-220 O-220 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) Available VGS = 10 V Qg (Max.) (nC) 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration • Repetitive Avalanche Rated 0.45 RoHS* COMPLIANT


    Original     		PDF IRFB9N30A, SiHFB9N30A O-220 O-220 12-Mar-07