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    DUAL P-CHANNEL 2.5-V (G-S) MOSFET Search Results

    DUAL P-CHANNEL 2.5-V (G-S) MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK5R3E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    DUAL P-CHANNEL 2.5-V (G-S) MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si9529DY

    Abstract: No abstract text available
    Text: Si9529DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –12 12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1


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    PDF Si9529DY S-49520--Rev. 18-Dec-96

    Si9529DY

    Abstract: No abstract text available
    Text: Si9529DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –12 12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1


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    PDF Si9529DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si9529DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N Channel N-Channel 20 P Channel P-Channel –12 12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1


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    PDF Si9529DY 08-Apr-05

    S-49534

    Abstract: Si6943DQ
    Text: Si6943DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.10 @ VGS = - 4.5 V "2.5 0.18 @ VGS = - 2.5 V "1.9 S TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6943DQ G 6 S2 5 G2 Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    PDF Si6943DQ 18-Jul-08 S-49534

    Untitled

    Abstract: No abstract text available
    Text: Si6943DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.10 @ VGS = - 4.5 V "2.5 0.18 @ VGS = - 2.5 V "1.9 S TSSOP-8 D1 1 S1 2 S1 3 G1 4 8 D2 7 S2 D Si6943DQ G 6 S2 5 G2 Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    PDF Si6943DQ 08-Apr-05

    Si4562DY

    Abstract: SI4562
    Text: Si4562DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5.0 D1 D1 S2 SOĆ8 S1 1 8


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    PDF Si4562DY S-54940--Rev. 29-Sep-97 SI4562

    S-54711

    Abstract: Si6562DQ 54711
    Text: Si6562DQ Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V "4.5 0.040 @ VGS = 2.5 V "3.9 0.050 @ VGS = –4.5 V "3.5 0.085 @ VGS = –2.5 V "2.7 D1 S2 TSSOP-8 D1 S1 S1


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    PDF Si6562DQ S-54711--Rev. 27-Oct-97 S-54711 54711

    Si4562DY

    Abstract: No abstract text available
    Text: Si4562DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (A) 0.025 @ VGS = 4.5 V "7.1 0.035 @ VGS = 2.5 V "6.0 0.033 @ VGS = –4.5 V "6.2 0.050 @ VGS = –2.5 V "5.0 D1 D1 S2 SOĆ8 S1 1 8


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    PDF Si4562DY S-54940--Rev. 29-Sep-97

    Si9529DY

    Abstract: No abstract text available
    Text: Si9529DY Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) N-Channel 20 P-Channel –12 rDS(on) (W) ID (A) 0.03 @ VGS = 4.5 V "6 0.04 @ VGS = 2.5 V "5.2 0.05 @ VGS = –4.5 V "5 0.074 @ VGS = –2.5 V "4.1 D1 D1 S2 SO-8 S1 1 8 D1 G1 2


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    PDF Si9529DY S-49520--Rev. 18-Dec-96

    Untitled

    Abstract: No abstract text available
    Text: Si6943DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 S TSSOP-8 D1 S1 S1 G1 1 D 2 8 7 Si6943DQ 3 6 4 5 G D2 S2 S2 G2 Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


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    PDF Si6943DQ S-49534--Rev. 06-Oct-97

    S-49534

    Abstract: Si6943DQ
    Text: Si6943DQ Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 S TSSOP-8 D1 S1 S1 G1 1 D 2 8 7 Si6943DQ 3 6 4 5 G D2 S2 S2 G2 Top View D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


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    PDF Si6943DQ S-49534--Rev. 06-Oct-97 S-49534

    S-49534

    Abstract: Si6943DQ
    Text: Si6943DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "2.5 0.18 @ VGS = –2.5 V "1.9 S TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 D Si6943DQ G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    PDF Si6943DQ S-49534--Rev. 06-Oct-97 S-49534

    s8105

    Abstract: SI6943
    Text: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available


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    PDF Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s8105 SI6943

    Untitled

    Abstract: No abstract text available
    Text: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available


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    PDF Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available


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    PDF Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available


    Original
    PDF Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si6943BDQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.08 at VGS = - 4.5 V - 2.5 0.105 at VGS = - 2.5 V - 1.9 • Halogen-free Option Available • TrenchFET Power MOSFETs Pb-free Available


    Original
    PDF Si6943BDQ Si6943BDQ-T1 Si6943BDQ-T1-GE3 11-Mar-11

    RESISTANCE11

    Abstract: No abstract text available
    Text: T e m ic SÌ9529DY Semiconductors Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) N-Channel 20 P-Channel -12 rDS(on) (Q ) 0.03 @VGS = 4.5 V 0.04 @ VGS = 2.5 V 0.05 @ Vqs = -4-5 V 0.074 @VGS =-2.5 V I d (A) ±6 ±5.2 ±5 ±4.1 1.5-^


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    PDF 9529DY S-49520--Rev. 18-Dec-96 S-49520---Rev. RESISTANCE11

    Untitled

    Abstract: No abstract text available
    Text: T e m ic Si6963DQ Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) Id (A) ±3.5 ±2.7 rDS(on) (£2) 0.050 @ VGs = -4.5 V 0.085 @ VGs = -2.5 V 20 Si S2 o p 6 6 P-Channel MOSFET P-Channel MOSFET TSSOP-8 Si6963DQ Top View Di D2


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    PDF Si6963DQ 25Source S-53246â 26-May-97

    Untitled

    Abstract: No abstract text available
    Text: Temic SÌ6562DQ S e m i c o n d u c t o r s Dual N- and P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) N-Cbannel 20 P-Channel 20 «t)S(on) (Q ) I d (A) 0.030 @ Vos = 4.5 V ±4.5 0.040 @ VGS = 2.5 V ±3.9 0.050 @ VGs = -4.5 V ±3.5 0.085 @ VGS = -2.5 V


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    PDF 6562DQ S-54711-- 27-Oct-97 S-54711--Rev.

    gfr DIODE

    Abstract: No abstract text available
    Text: T E M IC SÌ9934DY Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V ) 12 r DS(on) (£2) I d (A ) 0.05 @ VGS = -4.5 V 0.074 @ VGs = -2.5 V ±5 ±4.1 SO-8 Gi Top View Di Di D'2 D 2 P-Channel MOSFET P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)


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    PDF 9934DY 150QC S-49532--Rev. 02-Feb-98 gfr DIODE

    Untitled

    Abstract: No abstract text available
    Text: VQ3001J/P Vishay Siliconix Dual N-/Dual P-Channel 30-V D-S MOSFETs PRODUCT SUMMARY V (B R ) D S S M i n ( V ) r D S (o n ) Max ( Q ) Id (A) V G S (th )(V ) N-Channel 30 1 @ VGS= 12V 0.8 to 2.5 0.85 P-C hannel -3 0 2 @ Vq s » -1 2 V - 2 to -4 .5 -0 .6 FEATURES


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    PDF VQ3001J/P S-04279-- 16-Jul-01 16-Ju

    s26d

    Abstract: No abstract text available
    Text: T E M IC SÌ9926DY Semiconductors Dual N-Channel 2.5-V G-S Rated MOSFET P rod uct S u m m a r y v DS(V) 20 r DS(on) (£2) I d (A) 0.03 @ VGS = 4.5 V ±6 0.04 @ Vos = 2.5 V ±5.2 Di D 2 D2 Di U S O -8 u Gi Ô Top View Ô S2 Si N-Channel MOSFET N-Channel MOSFET


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    PDF 9926DY S-49532-- 02-Feb-98 s26d

    Untitled

    Abstract: No abstract text available
    Text: Tem ic SÌ4963DY Semiconductors Dual P-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) 20 r DS(on) ( ß ) I d (A) 0.033 @ VGS = -4.5 V ±6.2 0.050 @ VGs = -2.5 V ±5 p°*e a.s-'' S2 p SO-8 Di XI D' s2 c r g2 ( X ~6~| D2 ~ n d 0-1* ir*1*j. °ne


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    PDF 4963DY S-51649-- 28-Apr-97 S-51649--Rev.