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    DUAL N CHANNEL MOSFET DRIVER Search Results

    DUAL N CHANNEL MOSFET DRIVER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DUAL N CHANNEL MOSFET DRIVER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RG 2006

    Abstract: LPG GAS SENSOR dual n-channel buck mosfet driver 12v 12v mosfet led driver rg2006 AN-6003 FAN5109 FAN5109B FDD6696 FAN5029
    Text: FAN5109B Dual Bootstrapped 12V MOSFET Driver Features Description ƒ Drives N-Channel High-Side and Low-Side MOSFETs The FAN5109B is a dual, high-frequency MOSFET driver, specifically designed to drive N-channel power MOSFETs in a synchronous-rectified buck converter.


    Original     		FAN5109B FAN5109 FAN5029/FAN5182 500kHz FAN5109B RG 2006 LPG GAS SENSOR dual n-channel buck mosfet driver 12v 12v mosfet led driver rg2006 AN-6003 FAN5109 FDD6696 FAN5029 PDF

    fan5109m

    Abstract: Q1/SW-16
    Text: FAN5109 Dual Bootstrapped 12V MOSFET Driver Features Description ƒ Drives N-Channel High-Side and Low-Side MOSFETs The FAN5109 is a dual high-frequency MOSFET driver, specifically designed to drive N-Channel power MOSFETs in a synchronous-rectified buck converter.


    Original     		FAN5109 12VGS. fan5109m Q1/SW-16 PDF

    bv42 transistor

    Abstract: bv42 27e5 LM324 FDSS2407 injector driver 33E10 marking n9 8-pin PIN diode Pspice model
    Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description „ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate


    Original     		FDSS2407 FDSS2407 bv42 transistor bv42 27e5 LM324 injector driver 33E10 marking n9 8-pin PIN diode Pspice model PDF

    TC227

    Abstract: No abstract text available
    Text: FDSS2407 N-Channel Dual MOSFET 62V, 3.3A, 132mΩ Features General Description ̈ 62V, 132mΩ, 5V Logic Level Gate Dual MOSFET in SO-8 This dual N-Channel MOSFET provides added functions as compared to a conventional Power MOSFET. These are: 1. A drain to source voltage feedback signal and 2. A gate


    Original     		FDSS2407 FDSS2407 TC227 PDF

    Untitled

    Abstract: No abstract text available
    Text: RT9602 Dual Channel Synchronous-Rectified Buck MOSFET Driver General Description Features The RT9602 is a dual power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with RT9237/A and


    Original     		RT9602 RT9602 RT9237/A RT9241A/B 3000pF 14-Lead DS9602-07 PDF

    2N7000 series protection

    Abstract: No abstract text available
    Text: RT9602 Dual Channel Synchronous-Rectified Buck MOSFET Driver General Description Features The RT9602 is a dual power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with RT9237/A and


    Original     		RT9602 RT9602 RT9237/A RT9241A/B 3000pF DS9602-09 2N7000 series protection PDF

    ATX 2005 schematic diagram

    Abstract: No abstract text available
    Text: RT9602 Dual Channel Synchronous-Rectified Buck MOSFET Driver General Description Features The RT9602 is a dual power channel MOSFET driver specifically designed to drive four power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with RT9237/A and


    Original     		RT9602 RT9602 RT9237/A RT9241A/B 3000pF 14-Lead DS9602-06 ATX 2005 schematic diagram PDF

    202220A

    Abstract: capacitor 47uf 63v
    Text: DATA SHEET AAT4910 28V Half-Bridge Dual N-Channel MOSFET Driver General Description Features The AAT4910 is a 28V half-bridge dual MOSFET driver for high-current DC-DC converter and motor driver applications. It drives both high-side and low-side N-channel


    Original     		AAT4910 AAT4910 SC70JW-8 02220A 202220A capacitor 47uf 63v PDF

    Untitled

    Abstract: No abstract text available
    Text: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver


    Original     		CTLDM303N-M832DS TLM832DS 54mm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMLDM7003T CMLDM7003TG* SURFACE MOUNT PICOminiTM DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS Process,


    Original     		CMLDM7003T CMLDM7003TG* CMLDM7003T: OT-563 PDF

    Untitled

    Abstract: No abstract text available
    Text: CWDM305ND SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305ND is a dual, high current N-channel enhancement-mode silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient


    Original     		CWDM305ND CWDM305ND PDF

    Untitled

    Abstract: No abstract text available
    Text: RF1K49090 Data Sheet August 1999 3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET Power MOSFET File Number 3985.6 Features • 3.5A, 12V Title This Dual N-Channel power MOSFET is manufactured using F1K4 an advanced MegaFET process. This process, which uses


    Original     		RF1K49090 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF1K49088 Data Sheet August 1999 3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFET Power MOSFET File Number 3952.5 Features • 3.5A, 30V Title This Dual N-Channel power MOSFET is manufactured using F1K4 an advanced MegaFET process. This process, which uses


    Original     		RF1K49088 PDF

    AN7254

    Abstract: AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334
    Text: RF1K49154 Data Sheet October 1999 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET Power MOSFET File Number 4143.3 Features • 2A, 60V This Dual N-Channel power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI


    Original     		RF1K49154 AN7254 AN9321 AN9322 MS-012AA RF1K49154 RF1K4915496 TB334 PDF

    HIP6601BCB-T

    Abstract: HIP6601B HIP6601BCB HIP6603B HIP6603BCB HIP6604B MO-220 TB363
    Text: HIP6601B, HIP6603B, HIP6604B Data Sheet July 2003 Synchronous Rectified Buck MOSFET Drivers Features • Drives Two N-Channel MOSFETs The HIP6601B, HIP6603B and HIP6604B are highfrequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous


    Original     		HIP6601B, HIP6603B, HIP6604B HIP6603B HIP6604B HIP63xx ISL65xx HIP6601B HIP6601BCB-T HIP6601BCB HIP6603BCB MO-220 TB363 PDF

    HIP6601B

    Abstract: HIP6601BCB HIP6601BCB-T HIP6603B HIP6603BCB HIP6604B MO-220 TB363
    Text: HIP6601B, HIP6603B, HIP6604B Data Sheet April 2002 Synchronous Rectified Buck MOSFET Drivers Features • Drives Two N-Channel MOSFETs The HIP6601B, HIP6603B and HIP6604B are highfrequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous


    Original     		HIP6601B, HIP6603B, HIP6604B HIP6603B HIP6604B HIP63xx ISL65xx HIP6601B HIP6601BCB HIP6601BCB-T HIP6603BCB MO-220 TB363 PDF

    TRANSISTOR SMD MARKING zg

    Abstract: 2N7002BKV transistor smd zG TRANSISTOR SMD MARKING CODE zg
    Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		2N7002BKV OT666 AEC-Q101 771-2N7002BKV115 2N7002BKV TRANSISTOR SMD MARKING zg transistor smd zG TRANSISTOR SMD MARKING CODE zg PDF

    IRFZ44 equivalent

    Abstract: H-bridge irlZ44 IRLR034 1155I DIODE 1N4148 .07V ttl to cmos converter 24v rectifier j8 gate drive for mosfet irfz44 IRFZ44 mosfet LTC1155
    Text: LTC1155 Dual High Side Micropower MOSFET Driver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no


    Original     		LTC1155 LTC1255 LTC1477 LTC1623 LTC1710 4/300mA 1155fa IRFZ44 equivalent H-bridge irlZ44 IRLR034 1155I DIODE 1N4148 .07V ttl to cmos converter 24v rectifier j8 gate drive for mosfet irfz44 IRFZ44 mosfet LTC1155 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC1155 Dual High Side Micropower MOSFET Driver DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no


    Original     		LTC1155 LTC1255 LTC1477 LTC1623 LTC1710 /300mA 1155fa PDF

    Untitled

    Abstract: No abstract text available
    Text: CMLDM7002A CMLDM7002AG* CMLDM7002AJ w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS


    Original     		CMLDM7002A CMLDM7002AG* CMLDM7002AJ CMLDM7002A CMLDM7002AJ CMLDM7002A: CMLDM7002AJ: 200mA OT-563 PDF

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: DIODE smd marking CODE NZ bss138ps MOSFET TRANSISTOR SMD MARKING CODE A1 NXP SMD mosfet MARKING CODE 771-BSS138PS115
    Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		BSS138PS OT363 SC-88) AEC-Q101 771-BSS138PS115 BSS138PS NXP SMD TRANSISTOR MARKING CODE s1 DIODE smd marking CODE NZ MOSFET TRANSISTOR SMD MARKING CODE A1 NXP SMD mosfet MARKING CODE PDF

    CMLDM7002AG

    Abstract: CMLDM7002AJ CMLDM7002A
    Text: CMLDM7002A CMLDM7002AG* CMLDM7002AJ SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual Enhancement-mode N-Channel Field Effect Transistors, manufactured by the N-Channel DMOS


    Original     		CMLDM7002A CMLDM7002AG* CMLDM7002AJ CMLDM7002A CMLDM7002AJ CMLDM7002A: CMLDM7002AJ: 200mA OT-563 CMLDM7002AG PDF

    ultrasound transducer circuit driver 1mhz

    Abstract: gate-source zener TC6320 Piezoelectric 1Mhz 125OC 27BSC TC6320TG zener diode reverse breakdown voltage 4.5V P-channel MOSFET VGS -25V
    Text: TC6320 N- and P- Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC6320TG consists of a high voltage low threshold N-channel and P-channel MOSFET in an SO8 package. Both MOSFETs have integrated gate-source


    Original     		TC6320 TC6320TG TC6320 27BSC DSFP-TC6320 C112106 ultrasound transducer circuit driver 1mhz gate-source zener Piezoelectric 1Mhz 125OC 27BSC zener diode reverse breakdown voltage 4.5V P-channel MOSFET VGS -25V PDF

    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: g1 TRANSISTOR SMD MARKING CODE DIODE smd marking CODE NZ NXP SMD TRANSISTOR MARKING CODE s1 BSS138PS NXP SMD mosfet MARKING CODE transistor SMD MARKING CODE nz MOSFET TRANSISTOR SMD MARKING CODE 11 smd code marking Nz smd transistor marking A1
    Text: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		BSS138PS OT363 SC-88) AEC-Q101 MOSFET TRANSISTOR SMD MARKING CODE A1 g1 TRANSISTOR SMD MARKING CODE DIODE smd marking CODE NZ NXP SMD TRANSISTOR MARKING CODE s1 BSS138PS NXP SMD mosfet MARKING CODE transistor SMD MARKING CODE nz MOSFET TRANSISTOR SMD MARKING CODE 11 smd code marking Nz smd transistor marking A1 PDF