CTLDM30
Abstract: No abstract text available
Text: Product Brief CTLDM303N-M832DS 30V, 3.6A N-Channel CTLDM304P-M832DS (30V, 4.2A P-Channel) Dual, MOSFETs in the TLM832DS package TLM832DS Typical Electrical Characteristics Central Semiconductor’s CTLDM303N-M832DS (Dual, N-Channel) and CTLDM304P-M832DS (Dual, P-Channel) are enhancement-mode
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CTLDM303N-M832DS
CTLDM304P-M832DS
TLM832DS
TLM832DS
CTLDM303N-M832DS
CTLDM304P-M832DS
21x9x9
27x9x17
CTLDM30
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CTLSH1-50M832DS
Abstract: Dual Schottky Rectifiers marking CODE cfx
Text: Product Brief CTLSH1-50M832DS 1.0A, 50V Dual Schottky Rectifiers in the TLM832DS package TLM832DS Typical Electrical Characteristics Central Semiconductor’s CTLSH1-50M832DS dual 1.0A, 50V, low VF Schottky rectifiers packaged in the TLM832DS were designed for
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CTLSH1-50M832DS
TLM832DS
CTLSH1-50M832DS
OT-23)
TLM832DS
21x9x9
27x9x17
23x23x13
Dual Schottky Rectifiers
marking CODE cfx
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Untitled
Abstract: No abstract text available
Text: CTLSH1-50M832DS SURFACE MOUNT DUAL, HIGH CURRENT LOW VF SILICON SCHOTTKY RECTIFIERS TLM832DS CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH1-50M832DS Dual, Isolated, Low VF Silicon Schottky rectifiers are designed for applications where small size and operational
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CTLSH1-50M832DS
TLM832DS
OT-23)
100mA
500mA
54mm2
23-September
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marking CODE cfx
Abstract: No abstract text available
Text: CTLSH1-50M832DS SURFACE MOUNT DUAL, HIGH CURRENT LOW VF SILICON SCHOTTKY RECTIFIERS TLM832DS CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH1-50M832DS Dual, Isolated, Low VF Silicon Schottky rectifiers are designed for applications where small size and operational
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CTLSH1-50M832DS
OT-23)
TLM832DS
100mA
500mA
54mm2
23-September
marking CODE cfx
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Untitled
Abstract: No abstract text available
Text: CTLSH1-50M832DS SURFACE MOUNT DUAL, HIGH CURRENT LOW VF SILICON SCHOTTKY RECTIFIERS TLM832DS CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH150M832DS Dual, Isolated, Low VF Silicon Schottky rectifiers are designed for applications where small size
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CTLSH1-50M832DS
CTLSH150M832DS
OT-23)
TLM832DS
100mA
500mA
54mm2
23-September
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c330 TRANSISTOR
Abstract: No abstract text available
Text: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303NM832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient
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CTLDM303N-M832DS
CTLDM303NM832DS
TLM832DS
54mm2
28-August
c330 TRANSISTOR
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transistor c430
Abstract: P-channel power mosfet mosfet 15v 10A
Text: CTLDM304P-M832DS SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM304P-M832DS is a dual enhancement-mode P-Channel silicon MOSFET designed for high speed pulsed amplifier and driver
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CTLDM304P-M832DS
TLM832DS
transistor c430
P-channel power mosfet
mosfet 15v 10A
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Untitled
Abstract: No abstract text available
Text: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver
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CTLDM303N-M832DS
TLM832DS
54mm2
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10V 500mA MOSFET N-channel
Abstract: mosfet 10V 10A
Text: CTLDM7120-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed
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CTLDM7120-M832DS
TLM832DS
500mA
500mA
54mm2
10V 500mA MOSFET N-channel
mosfet 10V 10A
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P-channel Dual MOSFET VGS -25V
Abstract: marking code 16V diode CTLDM8120-M832DS
Text: CTLDM8120-M832DS SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8120-M832DS is an Enhancement-mode Dual P-Channel MOSFET, manufactured by the P-Channel DMOS Process, designed for high speed pulsed
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CTLDM8120-M832DS
TLM832DS
810mA
54mm2
P-channel Dual MOSFET VGS -25V
marking code 16V diode
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Untitled
Abstract: No abstract text available
Text: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303NM832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient
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Original
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CTLDM303N-M832DS
CTLDM303NM832DS
TLM832DS
54mm2
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PDF
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Untitled
Abstract: No abstract text available
Text: CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver
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Original
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CTLDM303N-M832DS
TLM832DS
54mm2
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