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Toshiba America Electronic Components DSF05S30U(TPH3,F) DIODE SCHOTTKY 30V 500MA USC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DSF05S30U(TPH3,F)	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components DSF05S30CTB(TPL3) DSF05S30CTB - DIODE Silicon Epitaxial Schottky Barrier Type
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	DSF05S30CTB(TPL3)		10,000		1	1 $0.0475 10 $0.0475 100 $0.0447 1000 $0.0404 10000 $0.0404	Buy Now

DSF05S30 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
DSF05S30U(TPH3,F)		Toshiba	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 0.5A USC		Original	PDF

DSF05S30 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DSF05S30U Abstract: No abstract text available Text: DSF05S30U TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30U High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 30 V Average forward current IO 500 ＊ mA Surge current (10ms)	Original	DSF05S30U DSF05S30U	PDF
Untitled Abstract: No abstract text available Text: DSF05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30CTB High Speed Switching Application Unit: mm 0.7±0.02 Reverse voltage VR 30 V Average forward current IO 500＊ mA Surge current 10ms IFSM 3 A Junction temperature Tj 125 °C Tstg	Original	DSF05S30CTB	PDF
DSF05S30U Abstract: No abstract text available Text: DSF05S30U 東芝ダイオードエピタキシャルショットキバリア形 DSF05S30U ○ 高速スイッチング用単位: mm 絶対最大定格 Ta = 25°C 項逆目記号電平均整流電圧 VR 流 IO サージ電流 ( 1 0 m s ）	Original	DSF05S30U DSF05S30U	PDF
Untitled Abstract: No abstract text available Text: DSF05S30U TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30U High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 30 V Average forward current IO 500 ＊ mA Surge current (10ms)	Original	DSF05S30U	PDF
DSF05S30 Abstract: DSF05S30U Text: DSF05S30U TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30U High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 30 V Average forward current IO 500 ＊ mA Surge current (10ms)	Original	DSF05S30U DSF05S30 DSF05S30U	PDF
Untitled Abstract: No abstract text available Text: DSF05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30CTB High Speed Switching Application Unit: mm 0.7±0.02 Reverse voltage VR 30 V Average forward current IO 500＊ mA Surge current 10ms IFSM 3 A Junction temperature Tj 125 °C Tstg	Original	DSF05S30CTB	PDF
Untitled Abstract: No abstract text available Text: DSF05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30CTB High Speed Switching Application Unit: mm 0.7±0.02 Reverse voltage VR 30 V Average forward current IO 500＊ mA Surge current 10ms IFSM 3 A Junction temperature Tj 125 °C Tstg	Original	DSF05S30CTB	PDF
Untitled Abstract: No abstract text available Text: DSF05S30U TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30U High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 30 V Average forward current IO 500 mA Surge current (10ms)	Original	DSF05S30U	PDF
Untitled Abstract: No abstract text available Text: DSF05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30CTB High Speed Switching Application Unit: mm 0.7 0.02 Unit Reverse voltage VR 30 V Average forward current IO 500 mA Surge current 10ms IFSM 3 A Junction temperature Tj 125 °C Tstg	Original	DSF05S30CTB	PDF
SCJ0004N Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT Text: 東芝半導体製品総覧表 2009 年 7 月版ダイオード整流ダイオード可変容量ダイオード高周波スイッチ用ダイオードツエナーダイオードスイッチングダイオードショットキーバリアダイオード	Original	SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT	PDF
Variable Capacitance Diodes Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24	PDF
DF2S3.6SC Abstract: TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS Text: 【正誤表】下記内容に誤記載がありましたので正誤表を添付させていただきます。 •資料名: 汎用小信号面実装対応素子（トランジスタ、ダイオード、セルパック） ■資料番号： BCJ0052E	Original	BCJ0052E RN1310 RN2310 RN1303 RN2303 RN1302 RN2302 RN1304 RN2307 DF2S3.6SC TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS	PDF
LT 543 common cathode Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current	Original	2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor	PDF
TPCA8030 Abstract: lm2804 TPCA8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558 Text: 製品カタログ 2009-9 東芝半導体製品カタログ汎用小信号面実装対応素子（トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S	Original	TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA8030 lm2804 TPCA8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558	PDF

CMG03 Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01 Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01	PDF
DF2S3.6SC Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS Text: 東芝半導体製品総覧表 2010 年 1 月版ダイオード整流ダイオード可変容量ダイオード高周波スイッチ用ダイオードツエナーダイオードスイッチングダイオードショットキーバリアダイオード	Original	SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 DF2S3.6SC CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS	PDF