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    Toshiba America Electronic Components DSF05S30U(TPH3,F)

    DIODE SCHOTTKY 30V 500MA USC
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    DSF05S30 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DSF05S30U(TPH3,F) Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 0.5A USC Original PDF

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    DSF05S30U

    Abstract: No abstract text available
    Text: DSF05S30U TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30U High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 30 V Average forward current IO 500 * mA Surge current (10ms)


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    PDF DSF05S30U DSF05S30U

    Untitled

    Abstract: No abstract text available
    Text: DSF05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30CTB High Speed Switching Application Unit: mm 0.7±0.02 Reverse voltage VR 30 V Average forward current IO 500* mA Surge current 10ms IFSM 3 A Junction temperature Tj 125 °C Tstg


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    PDF DSF05S30CTB

    DSF05S30U

    Abstract: No abstract text available
    Text: DSF05S30U 東芝ダイオード エピタキシャルショットキバリア形 DSF05S30U ○ 高速スイッチング用 単位: mm 絶対最大定格 Ta = 25°C 項 逆 目 記 号 電 平 均 整 流 電 圧 VR 流 IO サ ー ジ 電 流 ( 1 0 m s )


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    PDF DSF05S30U DSF05S30U

    Untitled

    Abstract: No abstract text available
    Text: DSF05S30U TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30U High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 30 V Average forward current IO 500 * mA Surge current (10ms)


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    PDF DSF05S30U

    DSF05S30

    Abstract: DSF05S30U
    Text: DSF05S30U TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30U High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 30 V Average forward current IO 500 * mA Surge current (10ms)


    Original
    PDF DSF05S30U DSF05S30 DSF05S30U

    Untitled

    Abstract: No abstract text available
    Text: DSF05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30CTB High Speed Switching Application Unit: mm 0.7±0.02 Reverse voltage VR 30 V Average forward current IO 500* mA Surge current 10ms IFSM 3 A Junction temperature Tj 125 °C Tstg


    Original
    PDF DSF05S30CTB

    Untitled

    Abstract: No abstract text available
    Text: DSF05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30CTB High Speed Switching Application Unit: mm 0.7±0.02 Reverse voltage VR 30 V Average forward current IO 500* mA Surge current 10ms IFSM 3 A Junction temperature Tj 125 °C Tstg


    Original
    PDF DSF05S30CTB

    Untitled

    Abstract: No abstract text available
    Text: DSF05S30U TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30U High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 30 V Average forward current IO 500 mA Surge current (10ms)


    Original
    PDF DSF05S30U

    Untitled

    Abstract: No abstract text available
    Text: DSF05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF05S30CTB High Speed Switching Application Unit: mm 0.7 0.02 Unit Reverse voltage VR 30 V Average forward current IO 500 mA Surge current 10ms IFSM 3 A Junction temperature Tj 125 °C Tstg


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    PDF DSF05S30CTB

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


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    PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


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    PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    DF2S3.6SC

    Abstract: TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS
    Text: 【正誤表】 下記内容に誤記載がありましたので正誤表を添付させていただきます。 •資料名: 汎用小信号面実装対応素子 (トランジスタ、 ダイオード、 セルパック) ■資料番号: BCJ0052E


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    PDF BCJ0052E RN1310 RN2310 RN1303 RN2303 RN1302 RN2302 RN1304 RN2307 DF2S3.6SC TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS

    LT 543 common cathode

    Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current


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    PDF 2010/9SCE0004K TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 LT 543 common cathode CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 (トランジスタダイオード、セルパック) SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


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    PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    CMG03

    Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
    Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A


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    PDF SCE0004I TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 CMG03 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01

    DF2S3.6SC

    Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
    Text: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


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    PDF SCJ0004O TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 DF2S3.6SC CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS