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    1SS417 Price and Stock

    Toshiba America Electronic Components 1SS417CT,L3F

    DIODE SCHOTTKY 40V 100MA FSC
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    DigiKey 1SS417CT,L3F Cut Tape 38,352 1
    • 1 $0.24
    • 10 $0.145
    • 100 $0.24
    • 1000 $0.05761
    • 10000 $0.04405
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    1SS417CT,L3F Digi-Reel 38,352 1
    • 1 $0.24
    • 10 $0.145
    • 100 $0.24
    • 1000 $0.05761
    • 10000 $0.04405
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    Avnet Americas 1SS417CT,L3F Reel 20,000 12 Weeks 10,000
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    • 10000 $0.02585
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    Mouser Electronics 1SS417CT,L3F 31,472
    • 1 $0.24
    • 10 $0.145
    • 100 $0.066
    • 1000 $0.052
    • 10000 $0.039
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    TTI 1SS417CT,L3F Reel 10,000
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    • 10000 $0.0386
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    Toshiba America Electronic Components 1SS417,L3M

    DIODE SCHOTTKY 40V 100MA FSC
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    DigiKey 1SS417,L3M Cut Tape 33,393 1
    • 1 $0.22
    • 10 $0.135
    • 100 $0.22
    • 1000 $0.05358
    • 10000 $0.04086
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    1SS417,L3M Digi-Reel 33,393 1
    • 1 $0.22
    • 10 $0.135
    • 100 $0.22
    • 1000 $0.05358
    • 10000 $0.04086
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    1SS417,L3M Reel 20,000 10,000
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    • 10000 $0.03713
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    Mouser Electronics 1SS417,L3M 35,950
    • 1 $0.22
    • 10 $0.135
    • 100 $0.062
    • 1000 $0.048
    • 10000 $0.033
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    Avnet Asia 1SS417,L3M 24 Weeks 10,000
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    EBV Elektronik 1SS417,L3M 25 Weeks 10,000
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    PanJit Group 1SS417TM_R1_00001

    SURFACE MOUNT SCHOTTKY BARRIER
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    DigiKey 1SS417TM_R1_00001 Cut Tape 6,815 1
    • 1 $0.2
    • 10 $0.12
    • 100 $0.2
    • 1000 $0.04755
    • 10000 $0.04205
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    1SS417TM_R1_00001 Digi-Reel 1
    • 1 $0.2
    • 10 $0.12
    • 100 $0.2
    • 1000 $0.04755
    • 10000 $0.04205
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    1SS417TM_R1_00001 Reel 8,000
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    • 10000 $0.03347
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    Ozdisan Elektronik 1SS417TM_R1_00001
    • 1 -
    • 10 $0.04868
    • 100 $0.04868
    • 1000 $0.04868
    • 10000 $0.0399
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    PanJit Group 1SS417FN2_R1_00001

    SURFACE MOUNT SCHOTTKY BARRIER
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    DigiKey 1SS417FN2_R1_00001 Reel 8,000
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    • 10000 $0.03347
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    1SS417FN2_R1_00001 Cut Tape 1
    • 1 $0.2
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    1SS417FN2_R1_00001 Digi-Reel 1
    • 1 $0.2
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    Ozdisan Elektronik 1SS417FN2_R1_00001
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    • 100 $0.05612
    • 1000 $0.05612
    • 10000 $0.046
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    PanJit Semiconductor 1SS417TM_R1_00001

    Schottky Diodes & Rectifiers 45V,Schottky,SOD-923,0.1A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SS417TM_R1_00001
    • 1 $0.2
    • 10 $0.12
    • 100 $0.055
    • 1000 $0.042
    • 10000 $0.027
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    TME 1SS417TM_R1_00001 39,975 1
    • 1 $0.2006
    • 10 $0.1349
    • 100 $0.0724
    • 1000 $0.0406
    • 10000 $0.0271
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    NAC 1SS417TM_R1_00001 Reel 40,000
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    Avnet Silica 1SS417TM_R1_00001 18 Weeks 8,000
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    Find more 1SS417 price and stock on Findchips.com

    1SS417 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS417 Toshiba Diode Silicon Epitaxial Schottky Barrier Type Original PDF
    1SS417,L3M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 40V 100MA FSC Original PDF
    1SS417CT Toshiba 1SS417 - DIODE 0.1 A, 45 V, SILICON, SIGNAL DIODE, CST2, 1-1P1A, 2 PIN, Signal Diode Original PDF
    1SS417CT Toshiba Diodes Original PDF
    1SS417CT Toshiba Japanese - Diodes Original PDF
    1SS417CT,L3F Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 40V 100MA FSC Original PDF
    1SS417CT(TPL3) Toshiba 1SS417 - Schottky (Diodes & Rectifiers) Hi-Speed 40V 100mA Original PDF
    1SS417(TL3,T) Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 40V 100MA FSC Original PDF
    1SS417TS Toshiba 1SS417 - DIODE 0.1 A, 45 V, SILICON, SIGNAL DIODE, FSC2, 1-1X1A, 2 PIN, Signal Diode Original PDF

    1SS417 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS417CT

    Untitled

    Abstract: No abstract text available
    Text: 1SS417 Schottky Barrier Diode Silicon Epitaxial 1SS417 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC 1 2014-02-13 Rev.1.0 1SS417 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )


    Original     		PDF 1SS417 OD-923)

    1SS417CT

    Abstract: No abstract text available
    Text: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS417CT 1SS417CT

    Untitled

    Abstract: No abstract text available
    Text: 1SS417TM HIGH SPEED SWITCHING APPLICATION SOD-923 FEATURES Unit：inch mm • Small package 0.010(0.25) • Low reverse current : I R=5µA (Max.) • 0.034(0.85) 0.029(0.75) 0.026(0.65) 0.021(0.55) MECHANICAL DATA 0.005(0.15) • Low forward voltage : V F(3)=0.56V(typ.)


    Original     		PDF 1SS417TM OD-923 OD-923, MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: 1SS417TM HIGH SPEED SWITCHING APPLICATION SOD-923 FEATURES Unit：inch mm • Small package 0.010(0.25) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) • In compliance with EU RoHS 2002/95/EC directives 0.026(0.65) 0.021(0.55) MECHANICAL DATA


    Original     		PDF 1SS417TM OD-923 2002/95/EC OD-923, MIL-STD-750, 700ppm, 1000ppm 100ppm.

    1SS417

    Abstract: No abstract text available
    Text: 1SS417 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS417 ○ 超高速スイッチング用 単位: mm 0.6±0.05 定格 単位 0.07 せ ん 頭 逆 逆 電 電 圧 VRM 45 V 圧 VR 40 V せ ん 頭 順 電 流 IFM 200


    Original     		PDF 1SS417 20mmx20mm, 1SS417

    1SS417CT

    Abstract: ctct 10-N-0
    Text: 1SS417CT 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS417CT ○ 超高速スイッチング用 単位: mm 絶対最大定格 Ta = 25°C 項目 せ ん 頭 逆 逆 電 電 記号 定格 単位 圧 VRM 45 V 圧 VR 40


    Original     		PDF 1SS417CT 1SS417CT ctct 10-N-0

    Untitled

    Abstract: No abstract text available
    Text: 1SS417TM HIGH SPEED SWITCHING APPLICATION SO D -92 3 FEATURES • Small package • Low forward voltage : V F 3 =0.56V(typ.) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) 0.010(0.25) MECHANICAL DATA • Case : SOD-923, Plastic 0.005(0.15)


    Original     		PDF 1SS417TM OD-923, 2002/95/EC MIL-STD-750, 0004gram OD-923

    Untitled

    Abstract: No abstract text available
    Text: 1SS417TM HIGH SPEED SWITCHING APPLICATION SO D -92 3 FEATURES • Small package • Low forward voltage : VF 3 =0.56V(typ.) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) 0.010(0.25) MECHANICAL DATA • Case : SOD-923, Plastic 0.005(0.15)


    Original     		PDF 1SS417TM OD-923, 2002/95/EC MIL-STD-750, 0004gram 417TM OD-923

    Untitled

    Abstract: No abstract text available
    Text: 1SS417 Schottky Barrier Diode Silicon Epitaxial 1SS417 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode fSC SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2003-06 2014-04-14 Rev.2.0 1SS417 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )


    Original     		PDF 1SS417 OD-923)

    junction to case package sod923

    Abstract: No abstract text available
    Text: 1SS417TM HIGH SPEED SWITCHING APPLICATION SOD-923 FEATURES Unit：inch mm • Small package 0.010(0.25) • Low reverse current : I R=5µA (Max.) 0.034(0.85) 0.029(0.75) • /  0.005(0.15) • Low forward voltage : V F(3)=0.56V(typ.)


    Original     		PDF 1SS417TM OD-923 OD-923, MIL-STD-750, junction to case package sod923

    Untitled

    Abstract: No abstract text available
    Text: 1SS417 Schottky Barrier Diode Silicon Epitaxial 1SS417 1. Applications • High-Speed Switching 2. Packaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC Start of commercial production 1 2003-06 2014-07-08 Rev.3.0 1SS417 3. Absolute Maximum Ratings Note (Unless otherwise specified, Ta = 25 )


    Original     		PDF 1SS417 OD-923

    1SS417

    Abstract: No abstract text available
    Text: 1SS417 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application Unit: mm 0.6±0.05 Low reverse current: IR = 5µA Max. Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse voltage Symbol Rating Unit VRM


    Original     		PDF 1SS417 -55oducts 1SS417

    1SS417

    Abstract: No abstract text available
    Text: 1SS417 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application Unit: mm 0.6±0.05 Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum peak forward current IFM 200 mA Average forward current IO


    Original     		PDF 1SS417 1SS417

    Untitled

    Abstract: No abstract text available
    Text: 1SS417TS 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS417TS ○ 超高速スイッチング用 単位: mm z 2 端子小型外囲器なので高密度実装に最適です。 z 順方向特性が良い。 : VF 3 = 0.56V (標準)


    Original     		PDF 1SS417TS 20mmx20mm,

    Untitled

    Abstract: No abstract text available
    Text: 1SS417TS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417TS High Speed Switching Application • Unit: mm Small package Low forward voltage: VF 3 = 0.56V (typ.) Low reverse current: IR = 5 A (Max.) 0.6±0.05 A Symbol Rating Unit VRM 45 V Reverse voltage


    Original     		PDF 1SS417TS

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    TAH6N201U

    Abstract: TAH8N401K 1SS361CT 1SS387CT 1SS417CT TPD4113K MT3S106
    Text: C O N T E N T S 東芝半導体情報誌アイ 2005年2月号 2 今月の新製品情報 VOLUME 151 1チップインバータIC .2 2ビット 2電源片方向レベルシフタIC .2 Lead Frame Chip Scale Package.3


    Original     		PDF TPD4113K/TPD4113AK TPD4113K) 00V/1A TPD4113K 5HZIP23 TAH8N401K TAH6N201U 025mA TAH6N201U TAH8N401K 1SS361CT 1SS387CT 1SS417CT TPD4113K MT3S106

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    DF2S3.6SC

    Abstract: TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS
    Text: 【正誤表】 下記内容に誤記載がありましたので正誤表を添付させていただきます。 •資料名: 汎用小信号面実装対応素子 （トランジスタ、 ダイオード、 セルパック） ■資料番号： BCJ0052E


    Original     		PDF BCJ0052E RN1310 RN2310 RN1303 RN2303 RN1302 RN2302 RN1304 RN2307 DF2S3.6SC TC7SZ34FU FSV 052 TC7SZ34F TC7SZ17FU 1SS421 TC7SZ02F TC7SZ08FU 1SS417 TC7SZ00AFS