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    DS99220 Search Results

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    DS99220 Price and Stock

    Broadcom Limited APDS-9922-001

    SENSOR OPT 560NM AMBIENT 8 SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APDS-9922-001 Reel 5,000
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    • 10000 $0.94103
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    APDS-9922-001 Cut Tape 1
    • 1 $2.48
    • 10 $1.914
    • 100 $1.418
    • 1000 $1.09898
    • 10000 $1.09898
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    APDS-9922-001 Digi-Reel 1
    • 1 $2.48
    • 10 $1.914
    • 100 $1.418
    • 1000 $1.09898
    • 10000 $1.09898
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    Avnet Americas APDS-9922-001 Reel 16 Weeks 5,000
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    • 10000 $0.936
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    Mouser Electronics APDS-9922-001 3,135
    • 1 $2.44
    • 10 $1.62
    • 100 $1.25
    • 1000 $0.974
    • 10000 $0.9
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    EBV Elektronik APDS-9922-001 18 Weeks 5,000
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    DS99220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DS99220

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET VDSS ID25 IXFH 69N30P IXFT 69N30P RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


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    PDF 69N30P DS99220

    diode 300v

    Abstract: IXFH69N30P IXFT69N30P
    Text: IXFH69N30P IXFT69N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    PDF IXFH69N30P IXFT69N30P 200ns O-247 O-268 100ms 69N30P 0-16-09-A diode 300v IXFH69N30P IXFT69N30P

    DS99220

    Abstract: IXFH69N30P IXFK69N30P
    Text: PolarHTTM HiPerFET Power MOSFET IXFH69N30P IXFK69N30P VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous


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    PDF IXFH69N30P IXFK69N30P 69N30P DS99220 IXFH69N30P IXFK69N30P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFH69N30P IXFT69N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A Ω 49mΩ 200ns TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    PDF IXFH69N30P IXFT69N30P 200ns O-247 O-268 100ms 69N30P 0-16-09-A