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    IXFT69N30P Search Results

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    IXFT69N30P Price and Stock

    Littelfuse Inc IXFT69N30P

    MOSFET N-CH 300V 69A TO268
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    DigiKey IXFT69N30P Tube 300
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    Newark IXFT69N30P Bulk 300
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    IXYS Corporation IXFT69N30P

    MOSFETs 69 Amps 300V 0.049 Rds
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    Mouser Electronics IXFT69N30P
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    TTI IXFT69N30P Tube 300
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    TME IXFT69N30P 1
    • 1 $12.8
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    New Advantage Corporation IXFT69N30P 24 1
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    IXYS Integrated Circuits Division IXFT69N30P

    MOSFET DIS.69A 300V N-CH TO268(D2PAK) HIPERFET
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    Ozdisan Elektronik IXFT69N30P 30
    • 1 $14.5077
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    • 100 $13.5586
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    IXFT69N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFT69N30P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 300V 69A TO-268 Original PDF

    IXFT69N30P Datasheets Context Search

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    diode 300v

    Abstract: IXFH69N30P IXFT69N30P
    Text: IXFH69N30P IXFT69N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFH69N30P IXFT69N30P 200ns O-247 O-268 100ms 69N30P 0-16-09-A diode 300v IXFH69N30P IXFT69N30P

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    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFH69N30P IXFT69N30P = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A Ω 49mΩ 200ns TO-247 (IXFH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXFH69N30P IXFT69N30P 200ns O-247 O-268 100ms 69N30P 0-16-09-A